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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMC6484
SNOS675D AUGUST 2000REVISED JUNE 2020
LMC6484 CMOS, Quad, Rail-to-Rail Input and Output, Operational Amplifier
1
1 Features
1 Rail-to-rail input common-mode voltage range
(specified over temperature)
Rail-to-rail output swing (within 20 mV of supply
rail, 100-kΩload)
Specified 3-V, 5-V and 15-V performance
Excellent CMRR and PSRR: 82 dB
Ultra-low input current: 20 fA
High voltage gain (RL= 500 kΩ): 130 dB
Specified for 2-kΩand 600-Ωloads
2 Applications
Data acquisition (DAQ)
Currency counter
Oscilloscope (DSO)
Intra-DC interconnect (METRO)
Macro remote radio unit (RRU)
Multiparameter patient monitor
Merchant telecom rectifiers
Train control and management
Process analytics (pH, gas, concentration, force,
and humidity)
Three phase UPS
Improved replacement for TLC274, TLC279
3 Description
The LMC6484 device provides a common-mode
range that extends to both supply rails. This rail-to-rail
performance combined with excellent accuracy, due
to a high CMRR, makes this device unique among
rail-to-rail input amplifiers.
The LMC6484 is an excellent choice for systems,
such as data acquisition, that require a large input
signal range. The device is also an excellent upgrade
for circuits using limited common-mode range
amplifiers, such as the TLC274 and TLC279.
Maximum dynamic signal range is maintained in low
voltage and single-supply systems by the rail-to-rail
output swing of the LMC6484. The rail-to-rail output
swing of the LMC6484 is specified for loads down to
600 Ω.
Specified low voltage characteristics and low power
dissipation make the LMC6484 an excellent choice
for battery-operated systems.
See the LMC6482 for a dual CMOS operational
amplifier with these same features.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LMC6484 SOIC (14) 8.65 mm × 3.91 mm
PDIP (14) 19.177 mm × 6.35 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Single-Ended Unity Gain Buffer
2
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 DC Electrical Characteristics for LMC6484AI........... 5
6.6 DC Electrical Characteristics for LMC6484I.............. 7
6.7 DC Electrical Characteristics for LMC6484M............ 9
6.8 DC Electrical Characteristics for LMC6484AI......... 11
6.9 DC Electrical Characteristics for LMC6484I............ 11
6.10 DC Electrical Characteristics for LMC6484M........ 12
6.11 AC Electrical Characteristics for LMC6484A ........ 13
6.12 AC Electrical Characteristics for LMC6484I.......... 13
6.13 AC Electrical Characteristics for LMC6484M........ 14
6.14 AC Electrical Characteristics: V+= 3 V, V= 0 V. 14
6.15 Typical Characteristics.......................................... 15
7 Detailed Description............................................ 23
7.1 Overview................................................................. 23
7.2 Functional Block Diagram....................................... 23
7.3 Feature Description................................................. 23
7.4 Device Functional Modes........................................ 24
8 Application and Implementation ........................ 25
8.1 Application Information............................................ 25
8.2 Typical Application ................................................. 25
8.3 System Examples ................................................... 31
9 Power Supply Recommendations...................... 36
10 Layout................................................................... 36
10.1 Layout Guidelines ................................................. 36
10.2 Layout Example .................................................... 37
11 Device and Documentation Support................. 38
11.1 Device Support...................................................... 38
11.2 Documentation Support ........................................ 38
11.3 Support Resources ............................................... 38
11.4 Trademarks........................................................... 38
11.5 Electrostatic Discharge Caution............................ 38
11.6 Glossary................................................................ 38
12 Mechanical, Packaging, and Orderable
Information........................................................... 38
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (September 2015) to Revision D Page
Deleted old note 3 from DC Electrical Characteristics for LMC6484AI table......................................................................... 5
Deleted old note 3 from DC Electrical Characteristics for LMC6484I table ........................................................................... 7
Deleted old note 3 from DC Electrical Characteristics for LMC6484M table ........................................................................ 9
Changes from Revision B (August 2000) to Revision C Page
Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
3
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5 Pin Configuration and Functions
D or NFF Packages
14-Pin SOIC or PDIP
Top View
Pin Functions
PIN TYPE DESCRIPTION
NO. NAME
1 OUTPUT1 O Output for Amplifier 1
2 INVERTING INPUT1 I Inverting input for Amplifier 1
3NONINVERTING
INPUT1 I Noninverting input for Amplifier 1
4 V+ P Positive voltage supply pin
5NONINTERTING
INPUT2 I Noninverting input for Amplifier 2
6 INVERTING INPUT2 I Inverting input for Amplifier 2
7 OUTPUT2 O Output for Amplifier 2
8 OUTPUT3 O Output for Amplifier 3
9 INVERTING INPUT3 I Inverting input for Amplifier 3
10 NONINVERTING
INPUT3 I Noninverting input for Amplifier 3
11 V– P Negative supply voltage pin
12 NONINVERTING
INPUT4 I Noninverting input for Amplifier 4
13 INVERTING INPUT4 I Inverting input for Amplifier 4
14 OUTPUT4 O Output for Amplifier 5
4
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Limiting input pin current is only necessary for input voltages that exceed absolute maximum input voltage ratings.
(4) Applies to both single supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30 mA over long term may adversely
affect reliability.
(5) Do not short circuit output to V+, when V+is greater than 13 V or reliability will be adversely affected.
(6) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD= (TJ(max) TA)/RJθA. All numbers apply for packages soldered directly into a PC board.
6 Specifications
6.1 Absolute Maximum Ratings
See(1)(2)
MIN MAX UNIT
Differential input voltage ±Supply Voltage
Voltage at input/output pin (V)0.3 (V+) + 0.3 V
Supply voltage (V+V) 16 V
Current at input pin(3) ±5 mA
Current at output pin(4)(5) ±30 mA
Current at power supply pin 40 mA
TJJunction temperature(6) 150 °C
Tstg Storage temperature, Tstg 65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2) Human body model, 1.5-kΩresistor in series with 100 pF. All pins rated per method 3015.6 of MIL-STD-883. This is a class 2 device
rating.
6.2 ESD Ratings VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±2000 V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT
V+ Supply voltage 3 15.5 V
TJJunction temperature LMC6484AM 55 125 °C
LMC6484AI, LMC6484I 40 85 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1) LMC6484
UNITD (SOIC) NFF (PDIP)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 110 70 °C/W
5
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) V+= 15 V, VCM = 7.5 V and RLconnected to 7.5 V. For sourcing tests, 7.5 V VO11.5 V. For sinking tests, 3.5 V VO7.5 V.
6.5 DC Electrical Characteristics for LMC6484AI
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0.11 0.75 mV
At the temperature extremes 1.35
TCVOS Input offset voltage
average drift 1 µV/˚C
IBInput current 0.02 pA
At the temperature extremes 4
IOS Input offset current 0.01 pA
At the temperature extremes 2
CIN Common-mode
input capacitance 3 pF
RIN Input resistance >10 Tera Ω
CMRR Common-mode
rejection ratio
0 V VCM 15 V
V+= 15 V
70 82 dB
At the temperature
extremes 67
0 V VCM 5 V
V+= 5 V
70 82 dB
At the temperature
extremes 67
+PSRR Positive power
supply rejection
ratio
5 V V+15 V
V= 0 V
VO = 2.5 V
70 82 dB
At the temperature
extremes 67
PSRR Negative power
supply rejection
ratio
5 V V 15 V
V+= 0 V
VO=2.5 V
70 82 dB
At the temperature
extremes 67
VCM Input common-
mode voltage
range
V+= 5 V and 15 V
For CMRR 50 dB
V0.3 0.25 V
At the temperature
extremes 0
V++ 0.25 V++ 0.3 V
At the temperature
extremes V+
AVLarge signal
voltage gain
RL= 2 kΩ(3)
Sourcing
140 666
V/mV
At the
temperature
extremes 84
Sinking
35 75
V/mV
At the
temperature
extremes 20
RL= 600 Ω(3)
Sourcing
80 300
V/mV
At the
temperature
extremes 48
Sinking
20 35
V/mV
At the
temperature
extremes 13
6
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SNOS675D AUGUST 2000REVISED JUNE 2020
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DC Electrical Characteristics for LMC6484AI (continued)
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
(4) When V+is greater than 13 V, do not short circuit output to V+or reliability will be adversely affected.
VOOutput swing
V+= 5 V
RL= 2 kΩto V+/2
4.8 4.9 V
At the temperature
extremes 4.7
0.1 0.18 V
At the temperature
extremes 0.24
V+= 5 V
RL= 600 Ωto V+/2
4.5 4.7 V
At the temperature
extremes 4.24
0.3 0.5 V
At the temperature
extremes 0.65
V+= 15 V
RL= 2 kΩto V+/2
14.4 14.7 V
At the temperature
extremes 14.2
0.16 0.32 V
At the temperature
extremes 0.45
V+= 15 V
RL= 600 Ωto V+/2
13.4 14.1 V
At the temperature
extremes 13
0.5 1 V
At the temperature
extremes 1.3
ISC
Output short circuit
current
V+= 5 V
Sourcing, VO= 0 V 16 20 mA
At the temperature
extremes 12
Sinking,
VO= 5 V
11 15 mA
At the temperature
extremes 9.5
ISC
Output short circuit
current
V+= 15 V
Sourcing, VO= 0 V 28 30 mA
At the temperature
extremes 22
Sinking,
VO= 12 V(4)
30 30 mA
At the temperature
extremes 24
ISSupply current
All four amplifiers
V+= +5 V,
VO= V+/2
2 2.8 mA
At the temperature
extremes 3.6
All four amplifiers
V+= +15 V,
VO= V+/2
2.6 3 mA
At the temperature
extremes 3.8
7
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) V+= 15 V, VCM = 7.5 V and RLconnected to 7.5 V. For sourcing tests, 7.5 V VO11.5 V. For sinking tests, 3.5 V VO7.5 V.
6.6 DC Electrical Characteristics for LMC6484I
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0.11 3 mV
At the temperature extremes 3.7
TCVOS Input offset voltage
average drift 1 µV/˚C
IBInput current 0.02 pA
At the temperature extremes 4
IOS Input offset current 0.01 pA
At the temperature extremes 2
CIN Common-mode
input capacitance 3 pF
RIN Input resistance >10 Tera Ω
CMRR Common-mode
rejection ratio
0 V VCM 15 V
V+= 15 V 65 82 dB
At the temperature extremes 62
0 V VCM 5 V
V+= 5 V 65 82 dB
At the temperature extremes 60
+PSRR Positive power
supply rejection ratio 5 V V+15 V
V= 0 V, VO= 2.5 V 65 82 dB
At the temperature extremes 62
PSRR Negative power
supply rejection ratio 5 V V 15 V
V+= 0 V, VO=2.5 V 65 82 dB
At the temperature extremes 62
VCM Input common-mode
voltage range V+= 5 V and 15 V
For CMRR 50 dB
V0.3 0.25 V
At the temperature extremes 0
V++ 0.25 V++ 0.3 V
At the temperature extremes V+
AVLarge signal voltage
gain
RL= 2 kΩ(3)
Sourcing
120 666
V/mV
At the
temperature
extremes 72
Sinking
35 75
At the
temperature
extremes 20
RL= 600 Ω(3)
Sourcing
50 300
At the
temperature
extremes 30
Sinking
15 35
At the
temperature
extremes 10
8
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DC Electrical Characteristics for LMC6484I (continued)
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
(4) When V+is greater than 13 V, do not short circuit output to V+or reliability will be adversely affected.
VOOutput swing
V+= 5 V
RL= 2 kΩto V+/2
4.8 4.9 V
At the temperature extremes 4.7 0.1 0.18 V
At the temperature extremes 0.24
V+= 5 V
RL= 600 Ωto V+/2
4.5 4.7 V
At the temperature extremes 4.24 0.3 0.5 V
At the temperature extremes 0.65
V+= 15 V
RL= 2 kΩto V+/2
14.4 14.7 V
At the temperature extremes 14.2 0.16 0.32 V
At the temperature extremes 0.45
V+= 15 V
RL= 600 Ωto V+/2
13.4 14.1 V
At the temperature extremes 13 0.5 1 V
At the temperature extremes 1.3
ISC
Output short circuit
current
V+= 5 V
Sourcing, VO= 0 V 16 20 mA
At the temperature extremes 12
Sinking,
VO= 5 V 11 15 mA
At the temperature extremes 9.5
ISC
Output short circuit
current
V+= 15 V
Sourcing, VO= 0 V 28 30 mA
At the temperature extremes 22
Sinking,
VO= 12 V(4) 30 30 mA
At the temperature extremes 24
ISSupply current
All four amplifiers
V+= +5 V
VO= V+/2
2 2.8 mA
At the temperature extremes 3.6
All four amplifiers
V+= +15 V
VO= V+/2
2.6 3 mA
At the temperature extremes 3.8
9
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) V+= 15 V, VCM = 7.5 V and RLconnected to 7.5 V. For sourcing tests, 7.5 V VO11.5 V. For sinking tests, 3.5 V VO7.5 V.
6.7 DC Electrical Characteristics for LMC6484M
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0.11 3 mV
At the temperature extremes 3.8
TCVOS Input offset voltage
average drift 1 µV/˚C
IBInput current 0.02 pA
At the temperature extremes 100
IOS Input offset current 0.01 pA
At the temperature extremes 50
CIN Common-mode
input capacitance 3 pF
RIN Input resistance >10 Tera Ω
CMRR Common-mode
rejection ratio
0 V VCM 15 V
V+= 15 V 65 82 dB
At the temperature extremes 60
0 V VCM 5 V
V+= 5 V 65 8 dB
At the temperature extremes 60
+PSRR Positive power
supply rejection ratio 5 V V+15 V
V= 0 V, VO= 2.5 V 65 82 dB
At the temperature extremes 60
PSRR Negative power
supply rejection ratio
5 V V 15 V
V+= 0 V
VO=2.5 V
65 82 dB
At the temperature extremes 60
VCM Input common-mode
voltage range V+= 5 V and 15 V
For CMRR 50 dB
V0.3 0.25 V
At the temperature extremes 0
V++ 0.25 V++ 0.3 V
At the temperature extremes V+
AVLarge signal voltage
gain
RL= 2 kΩ(3)
Sourcing
120 666
V/mV
At the
temperature
extremes 72
Sinking
35 75
At the
temperature
extremes 20
RL= 600 Ω(3)
Sourcing
50 300
At the
temperature
extremes 30
Sinking
15 35
At the
temperature
extremes 10
10
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DC Electrical Characteristics for LMC6484M (continued)
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
(4) When V+is greater than 13 V, do not short circuit output to V+or reliability will be adversely affected.
VOOutput swing
V+= 5 V
RL= 2 kΩto V+/2
4.8 4.9 V
At the temperature extremes 4.7 0.1 0.18 V
At the temperature extremes 0.24
V+= 5 V
RL= 600 Ωto V+/2
4.5 4.7 V
At the temperature extremes 4.24 0.3 0.5 V
At the temperature extremes 0.65
V+= 15 V
RL= 2 kΩto V+/2
14.4 14.7 V
At the temperature extremes 14.2 0.16 0.32 V
At the temperature extremes 0.45
V+= 15 V
RL= 600 Ωto V+/2
13.4 14.1 V
At the temperature extremes 13 0.5 1 V
At the temperature extremes 1.3
ISC
Output short circuit
current
V+= 5 V
Sourcing, VO= 0 V 16 20 mA
At the temperature extremes 10
Sinking,
VO= 5 V 11 15 mA
At the temperature extremes 8
ISC
Output short circuit
current
V+= 15 V
Sourcing, VO= 0 V 28 30 mA
At the temperature extremes 20
Sinking,
VO= 12 V(4) 30 30 mA
At the temperature extremes 22
ISSupply current
All four amplifiers
V+= +5 V
VO= V+/2
2 2.8 mA
At the temperature extremes 3.8
All four amplifiers
V+= +15 V,
VO= V+/2
2.6 3 mA
At the temperature extremes 4
11
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
6.8 DC Electrical Characteristics for LMC6484AI
unless otherwise specified, all limits specified for TJ= 25°C, V+= 3 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0.9 2 mV
At the temperature extremes 2.7
TCVOS Input offset voltage average drift 2 µV/˚C
IBInput bias current 0.02 pA
IOS Input offset current 0.01 pA
CMRR Common-mode rejection ratio 0 V VCM 3 V 64 74 dB
PSRR Power supply rejection ratio 3 V V+15 V, V= 0 V 68 80 dB
VCM Input common-mode voltage range For CMRR 50 dB V0.25 0 V
V+V++ 0.25 V
VOOutput swing RL= 2 kΩto V+/2 2.8 V
0.2 V
RL= 600 Ωto V+/2 2.5 2.7 V
0.37 0.6 V
ISSupply current All four
amplifiers
1.65 2.5 mA
At the temperature
extremes 3
(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
6.9 DC Electrical Characteristics for LMC6484I
unless otherwise specified, all limits specified for TJ= 25°C, V+= 3 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0.9 3 mV
At the temperature extremes 3.7
TCVOS Input offset voltage average drift 2 µV/˚C
IBInput bias current 0.02 pA
IOS Input offset current 0.01 pA
CMRR Common-mode rejection ratio 0 V VCM 3 V 60 74 dB
PSRR Power supply rejection ratio 3 V V+15 V, V= 0 V 60 80 dB
VCM Input common-mode voltage
range For CMRR 50 dB V0.25 0 V
V+V++ 0.25 V
VOOutput swing RL= 2 kΩto V+/2 2.8 V
0.2 V
RL= 600 Ωto V+/2 2.5 2.7 V
0.37 0.6 V
ISSupply current All four amplifiers 1.65 2.5 mA
At the temperature
extremes 3
12
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
6.10 DC Electrical Characteristics for LMC6484M
unless otherwise specified, all limits specified for TJ= 25°C, V+= 3 V, V= 0 V, VCM = VO= V+/2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0.9 3 mV
At the temperature extremes 3.8
TCVOS Input offset voltage average
drift 2 µV/˚C
IBInput bias current 0.02 pA
IOS Input offset current 0.01 pA
CMRR Common-mode rejection ratio 0 V VCM 3 V 60 74 dB
PSRR Power supply rejection ratio 3 V V+15 V, V= 0 V 60 80 dB
VCM Input common-mode voltage
range For CMRR 50 dB V0.25 0 V
V+V++ 0.25 V
VOOutput swing RL= 2 kΩto V+/2 2.8 V
0.2 V
RL= 600 Ωto V+/2 2.5 2.7 V
0.37 0.6 V
ISSupply current All four amplifiers 1.65 2.5 mA
At the temperature
extremes 3.2
13
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) V+= 15 V. Connected as voltage follower with 10-V step input. Number specified is the slower of either the positive or negative slew
rates.
(4) Input referred, V+= 15 V and RL= 100 kΩconnected to 7.5 V. Each amplifier excited in turn with 1 kHz to produce VO= 12 VPP.
6.11 AC Electrical Characteristics for LMC6484A
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/ 2, and RL> 1 M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
SR Slew rate(3) 1 1.3 V/µs
At the temperature extremes 0.7
GBW Gain-bandwidth
product V+= 15 V 1.5 MHz
ФmPhase margin 50 Deg
GmGain margin 15 dB
Amplifier-to-amplifier
isolation(4) 150 dB
enInput-referred voltage
noise f = 1 kHz, VCM = 1 V 37 nVHz
inInput-referred current
noise f = 1 kHz 0.03 pAHz
THD Total harmonic
distortion f = 1 kHz, AV=2,
RL= 10 kΩ, VO= 4.1 VPP 0.01%
f = 10 kHz, AV=2,
RL= 10 kΩ, VO= 8.5 VPP,
V+= 10 V 0.01%
(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) V+= 15 V. Connected as Voltage Follower with 10-V step input. Number specified is the slower of either the positive or negative slew
rates.
(4) Input referred, V+= 15 V and RL= 100 kΩconnected to 7.5 V. Each amp excited in turn with 1 kHz to produce VO= 12 VPP.
6.12 AC Electrical Characteristics for LMC6484I
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
SR Slew rate(3) 0.9 1.3 V/µs
At the temperature extremes 0.63
GBW Gain-bandwidth product V+= 15 V 1.5 MHz
ФmPhase margin 50 Deg
GmGain margin 15 dB
Amplifier-to-amplifier
isolation(4) 150 dB
enInput-referred voltage noise f = 1 kHz, VCM = 1 V 37 nVHz
inInput-referred current noise f = 1 kHz 0.03 pAHz
THD Total harmonic distortion f = 1 kHz, AV=2,
RL= 10 kΩ, VO= 4.1 VPP 0.01%
f = 10 kHz, AV=2,
RL= 10 kΩ, VO= 8.5 VPP,
V+= 10 V 0.01%
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(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) V+= 15 V. Connected as Voltage Follower with 10-V step input. Number specified is the slower of either the positive or negative slew
rates.
(4) Input referred, V+= 15 V and RL= 100 kΩconnected to 7.5 V. Each amplifier excited in turn with 1 kHz to produce VO= 12 VPP.
6.13 AC Electrical Characteristics for LMC6484M
unless otherwise specified, all limits specified for TJ= 25°C, V+= 5 V, V= 0 V, VCM = VO= V+/2, and RL> 1M
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
SR Slew rate(3) 0.9 1.3 V/µs
At the temperature extremes 0.54
GBW Gain-bandwidth product V+= 15 V 1.5 MHz
ФmPhase margin 50 Deg
GmGain margin 15 dB
Amplifier-to-amplifier isolation(4) 150 dB
enInput-referred voltage noise f = 1 kHz, VCM = 1 V 37 nVHz
inInput-referred current noise f = 1 kHz 0.03 pAHz
THD Total harmonic distortion
f = 1 kHz, AV=2,
RL= 10 kΩ, VO= 4.1 VPP 0.01%
f = 10 kHz, AV=2,
RL= 10 kΩ, VO= 8.5 VPP,
V+= 10 V 0.01%
(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric normal.
(3) Connected as voltage follower with 2-V step input. Number specified is the slower of either the positive or negative slew rates.
6.14 AC Electrical Characteristics: V+= 3 V, V= 0 V
unless otherwise specified, V+= 3 V, V= 0 V, VCM = VO= V+/2, and RL> 1M
PARAMETER TEST CONDITIONS LMC6484AI, LMC6484I, LMC6484M UNIT
MIN(1) TYP(2) MAX(1)
SR Slew rate(3) 0.9 V/µs
GBW Gain-bandwidth product 1 MHz
THD Total harmonic distortion f = 10 kHz, AV=2,
RL= 10 kΩ, VO= 2 VPP 0.01%
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6.15 Typical Characteristics
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 1. Supply Current vs Supply Voltage Figure 2. Input Current vs Temperature
Figure 3. Sourcing Current vs Output Voltage Figure 4. Sourcing Current vs Output Voltage
Figure 5. Sourcing Current vs Output Voltage Figure 6. Sinking Current vs Output Voltage
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 7. Sinking Current vs Output Voltage Figure 8. Sinking Current vs Output Voltage
Figure 9. Output Voltage Swing vs Supply Voltage
.
Figure 10. Input Voltage Noise vs Frequency
Figure 11. Input Voltage Noise vs Input Voltage Figure 12. Input Voltage Noise vs Input Voltage
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 13. Input Voltage Noise vs Input Voltage Figure 14. Crosstalk Rejection vs Frequency
Figure 15. Crosstalk Rejection vs Frequency Figure 16. Positive PSRR vs Frequency
Figure 17. Negative PSRR vs Frequency Figure 18. CMRR vs Frequency
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 19. CMRR vs Input Voltage Figure 20. CMRR vs Input Voltage
Figure 21. CMRR vs Input Voltage Figure 22. ΔVOS vs CMR
Figure 23. ΔVOS vs CMR Figure 24. Input Voltage vs Output Voltage
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 25. Input Voltage vs Output Voltage Figure 26. Open Loop Frequency Response
Figure 27. Noninverting Large Signal Pulse Response Figure 28. Noninverting Large Signal Pulse Response
Figure 29. Noninverting Large Signal Pulse Response Figure 30. Noninverting Small Signal Pulse Response
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 31. Noninverting Small Signal Pulse Response Figure 32. Noninverting Small Signal Pulse Response
Figure 33. Inverting Large Signal Pulse Response Figure 34. Inverting Large Signal Pulse Response
Figure 35. Inverting Large Signal Pulse Response Figure 36. Inverting Small Signal Pulse Response
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 37. Inverting Small Signal Pulse Response Figure 38. Inverting Small Signal Pulse Response
Figure 39. Stability vs Capacitive Load Figure 40. Stability vs Capacitive Load
Figure 41. Stability vs Capacitive Load Figure 42. Stability vs Capacitive Load
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Typical Characteristics (continued)
at VS= 15 V, single supply, and TA= 25°C (unless otherwise specified)
Figure 43. Stability vs Capacitive Load Figure 44. Stability vs Capacitive Load
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7 Detailed Description
7.1 Overview
The LMC6484 is a quad operational amplifier that offers a low-cost, low-power amplifier for applications requiring
multiple operational amplifier stages and rail-to-rail operation. This device supports a wide supply range (3 V to
15 V) and excellent amplifier-to-amplifier isolation (150 dB typical). This device is an excellent choice for battery-
powered signal acquisition systems requiring highly integrated solutions to achieve efficient layout.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Amplifier Topology
The LMC6484 incorporates specially designed, wide-compliance range current mirrors, and the body effect to
extend input common-mode range to each supply rail. Complementary, paralleled, differential input stages, like
the type used in other CMOS and bipolar rail-to-rail input amplifiers, are not used because of their inherent
accuracy problems due to CMRR, crossover distortion, and open-loop gain variation.
The input stage design of the LMC6484 is complemented by an output stage capable of rail-to-rail output swing
even when driving a large load. Rail-to-rail output swing is obtained by taking the output directly from the internal
integrator instead of an output buffer stage.
7.3.2 Input Common-Mode Voltage Range
Unlike Bi-FET amplifier designs, the LMC6484 does not exhibit phase inversion when an input voltage exceeds
the negative supply voltage. Figure 46 shows an input voltage exceeding both supplies with no resulting phase
inversion on the output.
Figure 45. An Input Voltage Signal Exceeds the LMC6484
Power Supply Voltages With No Output Phase Inversion
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Feature Description (continued)
The absolute maximum input voltage is 300 mV beyond either supply rail at room temperature. Voltages greatly
exceeding this absolute maximum rating, as in Figure 46, can cause excessive current to flow in or out of the
input pins possibly affecting reliability.
Figure 46. A ±7.5V Input Signal Greatly Exceeds the 3-V
Supply in Figure 47 Causing No Phase Inversion due to RI
Applications that exceed this rating must externally limit the maximum input current to ±5 mA with an input
resistor, as shown in Figure 47.
Figure 47. RIInput Current Protection for Voltages Exceeding the Supply Voltage
7.3.3 Rail-to-Rail Output
The approximated output resistance of the LMC6484 is 180-Ωsourcing and 130-Ωsinking at VS= 3 V, and 110-
Ωsourcing and 83-Ωsinking at VS= 5 V. Using the calculated output resistance, the maximum output voltage
swing can be estimated as a function of load.
7.4 Device Functional Modes
The LMC6482 may be used in applications where each amplifier channel is used independently, or in
applications with cascaded channels. See the Typical Application section for more information.
±
+
VIN
VOUT
RF
CF
RO
CL
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Upgrading Applications
The LMC6484 quad-channel devices and LMC6482 dual-channel devices have industry standard pinouts to
retrofit existing applications. System performance can be greatly increased by the features of the LMC6484. The
key benefit of designing in the LMC6484 is increased linear signal range. Most operational amplifiers have limited
input common-mode ranges. Signals that exceed this range generate a nonlinear output response that persists
long after the input signal returns to the common-mode range.
Linear signal range is vital in applications such as filters, where signal peaking can exceed input common-mode
ranges, and result in output phase inversion or severe distortion.
8.1.2 Spice Macromodel
A spice macromodel is available for the LMC6484. This model includes accurate simulation of the following:
Input common-mode voltage range
Frequency and transient response
GBW dependence on loading conditions
Quiescent and dynamic supply current
Output swing dependence on loading conditions
Many more characteristics, as listed on the macromodel disk.
Contact your local Texas Instruments sales office to obtain an operational amplifier spice model library disk.
8.2 Typical Application
Figure 48. Unity Gain Buffer for High-Capacitive Loads
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Typical Application (continued)
8.2.1 Design Requirements
For best performance, make sure that the input voltage swing is between V+ and V–.
Make sure that the input does not exceed the common-mode input range.
To reduce the risk of de-stabilizing the output, use resistive isolation on the output when driving capacitive
loads (see the Capacitive Load Compensation section).
When large feedback resistors are used, compensate for parasitic capacitance on the input as needed (see
the Compensating for Input Capacitance section).
8.2.2 Detailed Design Procedure
8.2.2.1 Capacitive Load Compensation
The LMC6484 typically directly drives a 100-pF load with VS= 15 V at unity gain without oscillating. The unity
gain follower is the most sensitive configuration. Direct capacitive loading reduces the phase margin of
operational amplifiers. The combination of the output impedance of the operational amplifier and the capacitive
load induces phase lag that results in either an under-damped pulse response or oscillation.
Capacitive load compensation can be accomplished using resistive isolation, as shown in Figure 49. This simple
technique is useful for isolating the capacitive input of multiplexers and analog-to-digital converters (ADCs).
Figure 49. Resistive Isolation of a 330-pF Capacitive Load
Figure 50. Pulse Response of the LMC6484 Circuit in Figure 49
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Typical Application (continued)
Improved frequency response is achieved by indirectly driving capacitive loads as shown in Figure 51.
Figure 51. LMC6484 Noninverting Amplifier Compensated to Handle a 330-pF Capacitive Load
R1 and C1 serve to counteract the loss of phase margin by feeding forward the high-frequency component of the
output signal back to the inverting input of the amplifier; thereby, preserving phase margin in the overall feedback
loop. The values of R1 and C1 are experimentally determined for the desired pulse response. The resulting pulse
response is seen in Figure 52.
Figure 52. Pulse Response of LMC6484 Circuit in Figure 51
1 IN 2 f
1 IN 2 f
1 1
2 R C 2 R C
or
R C R C
³
p p
£
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Typical Application (continued)
8.2.2.2 Compensating for Input Capacitance
Large values of feedback resistance are often used with amplifiers that have ultra-low input current, such as the
LMC6484. Large feedback resistors can react with small values of input capacitance due to transducers,
photodiodes, and circuit-board parasitics to reduce phase margins.
Figure 53. Canceling the Effect of Input Capacitance
To compensate for the effect of input capacitance, add a feedback capacitor. The feedback capacitor (as in
Figure 53), Cf, is first estimated by Equation 1:
(1)
This equation typically provides significant overcompensation. Printed circuit board (PCB) stray capacitance may
be larger or smaller than that of a breadboard, so the actual optimum value for Cfmay be different. The values of
Cf should be checked on the actual circuit. See the LMC660 Quad CMOS Amplifier data sheet for a more
detailed discussion.
8.2.2.3 Offset Voltage Adjustment
Offset voltage adjustment circuits are illustrated in Figure 54 and Figure 55. Large-value resistances and
potentiometers are used to reduce power consumption while providing typically ±2.5 mV of adjustment range,
referred to the input, for both configurations with VS= ±5 V.
Figure 54. Inverting Configuration
Offset Voltage Adjustment Figure 55. Noninverting Configuration
Offset Voltage Adjustment
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Typical Application (continued)
8.2.3 Application Curves
Figure 56. Open Loop Frequency Response Figure 57. Open Loop Frequency Response vs
Temperature
Figure 58. Maximum Output Swing vs Frequency Figure 59. Gain and Phase vs Capacitive Load
Figure 60. Gain and Phase vs Capacitive Load Figure 61. Open Loop Output Impedance vs Frequency
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Typical Application (continued)
Figure 62. Open Loop Output Impedance vs Frequency Figure 63. Slew Rate vs Supply Voltage
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8.3 System Examples
The circuit in Figure 64 uses a single supply to half-wave rectify a sinusoid centered about ground. RIlimits
current into the amplifier caused by the input voltage exceeding the supply voltage. Figure 65 shows the half-
wave rectifier waveform. Full-wave rectification is provided by the circuit in Figure 66.
Figure 64. Half-Wave Rectifier With Input Current Protection (RI)
Figure 65. Half-Wave Rectifier Waveform
Figure 66. Full Wave Rectifier With Input Current Protection (RI)
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System Examples (continued)
Figure 67. Full Wave Rectifier Waveform
Figure 68. Large Compliance Range Current Source
Figure 69. Positive Supply Current Sense
2 2
1 1
C R
1 1
R1 R2, C1 C2; f ; DF
2 R1C1 2 C R
= = = =
p
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System Examples (continued)
In Figure 70, dielectric absorption and leakage is minimized by using a polystyrene or polyethylene hold
capacitor. The droop rate is primarily determined by the value of CH and the diode leakage current. The ultra-low
input current of the LMC6484 has a negligible effect on droop.
Figure 70. Low Voltage Peak Detector With Rail-to-Rail Peak Capture Range
Figure 71. Rail-to-Rail Sample and Hold
The high CMRR (85 dB) of the LMC6484 allows excellent accuracy throughout the rail-to-rail dynamic capture
range of the circuit.
The low-pass filter circuit in Figure 72 can be used as an antialiasing filter with the same voltage supply as the
ADC. Filter designs can also take advantage of the LMC6484 ultra-low input current. The ultra-low input current
yields negligible offset error even when large value resistors are used, which allows the use of smaller-valued
capacitors that take up less board space and cost less.
Figure 72. Rail-to-Rail, Single-Supply, Low-Pass Filter
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System Examples (continued)
8.3.1 Data Acquisition Systems
Low-power, single-supply, data acquisition system solutions are provided by buffering the ADC12038 with the
LMC6484, as shown in Figure 73. Capable of using the full supply range, the LMC6484 does not require input
signals to be scaled down to meet limited common-mode voltage ranges. The LMC6484 CMRR of 82 dB
maintains integral linearity of a 12-bit data acquisition system to ±0.325 LSB. Other rail-to-rail input amplifiers
with only 50 dB of CMRR degrade the accuracy of the data acquisition system to only 8 bits.
Figure 73. Operating From the Same Supply Voltage, the
LMC6484 Buffers the ADC12038 Maintaining Excellent Accuracy
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System Examples (continued)
8.3.2 Instrumentation Circuits
The LMC6484 has the high input impedance, large common-mode range, and high CMRR required for designing
instrumentation circuits. Instrumentation circuits designed with the LMC6484 can reject a larger range of
common-mode signals than most instrumentation amps. Thus, instrumentation circuits designed with the
LMC6484 are an excellent choice for noisy or industrial environments. Other applications that benefit from these
features include analytic medical instruments, magnetic field detectors, gas detectors, and silicon-based
transducers.
A small-valued potentiometer is used in series with Rg to set the differential gain of the three-op-amp
instrumentation circuit in Figure 74. This combination is used instead of one large valued potentiometer to
increase gain trim accuracy and reduce error due to vibration.
Figure 74. Low-Power, Three-Op-Amp Instrumentation Amplifier
A two-op-amp instrumentation amplifier designed for a gain of 100 is shown in Figure 75. Low sensitivity
trimming is made for offset voltage, CMRR, and gain. Low cost and low power consumption are the main
advantages of this two-op-amp circuit.
Higher frequency and larger common-mode range applications are best facilitated by a three-op-amp
instrumentation amplifier.
Figure 75. Low-Power Two-Op-Amp Instrumentation Amplifier
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9 Power Supply Recommendations
The LMC6482 can be operated over a supply range of 3 V to 15 V. To achieve noise immunity as appropriate to
the application, make sure to use good PCB layout practices for power supply rails and planes, as well as using
bypass capacitors connected between the power supply pins and ground.
10 Layout
10.1 Layout Guidelines
10.1.1 Printed-Circuit-Board Layout for High-Impedance Work
Any circuit that must operate with less than 1000 pA of leakage current requires special layout of the PCB. To
take advantage of the ultra-low input current of the LMC6484 (typically, less than 20 fA), make sure to have an
excellent layout. Fortunately, the techniques for obtaining low leakages are quite simple. First, do not ignore the
surface leakage of the PCB, even though this leakage may sometimes appear acceptably low, because under
conditions of high humidity or dust or contamination, the surface leakage will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LMC6484 inputs
and the terminals of capacitors, diodes, conductors, resistors, relay terminals, an so on, connected to the
operational amplifier inputs, as in Figure 78. To have a significant effect, place guard rings in both the top and
bottom of the PCB. This PC foil must then be connected to a voltage that is at the same voltage as the amplifier
inputs, because no leakage current can flow between two points at the same potential. For example, a PCB
trace-to-pad resistance of 1012 Ω, which is normally considered a very large resistance, could leak 5 pA if the
trace were a 5-V bus adjacent to the pad of the input. This leakage would cause a 250 times degradation from
the actual performance of the LMC6484. However, if a guard ring is held within 5 mV of the inputs, then even a
resistance of 1011 Ωwould cause only 0.05 pA of leakage current. Figure 76 shows the typical connections of
guard rings for standard operational amplifier configurations.
Figure 76. Typical Connections of Guard Rings
Be aware that when it is inappropriate to lay out a PCB for the sake of just a few circuits, another technique even
better than a guard ring on a PCB: do not insert the input pin of the amplifier into the PCB at all, but bend the
input pin up in the air and use only air as an insulator. Air is an excellent insulator. In this case, you may have to
forego some of the advantages of PCB construction, but the advantages are sometimes well worth the effort of
using point-to-point, up-in-the-air wiring, as shown in Figure 77.
NOTE: Input pins are lifted out of PCB and soldered directly to components. All other pins connected to PCB.
Figure 77. Air Wiring
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10.2 Layout Example
Figure 78. Example of Guard Ring in a PCB Layout
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11 Device and Documentation Support
11.1 Device Support
For the LMC6584 PSpice model, see SNOM165.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation, see the following:
LMC6482 CMOS Dual Rail-To-Rail Input and Output Operational Amplifier data sheet
LMC660 CMOS Quad Operational Amplifier data sheet)
.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LMC6484AIM NRND SOIC D 14 55 Non-RoHS
& Green Call TI Call TI -40 to 85 LMC6484
AIM
LMC6484AIM/NOPB ACTIVE SOIC D 14 55 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LMC6484
AIM
LMC6484AIMX NRND SOIC D 14 2500 Non-RoHS
& Green Call TI Call TI -40 to 85 LMC6484
AIM
LMC6484AIMX/NOPB ACTIVE SOIC D 14 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LMC6484
AIM
LMC6484AIN/NOPB ACTIVE PDIP NFF 14 25 RoHS & Green SN Level-1-NA-UNLIM -40 to 85 LMC6484AIN
LMC6484IM NRND SOIC D 14 55 Non-RoHS
& Green Call TI Call TI -40 to 85 LMC6484IM
LMC6484IM/NOPB ACTIVE SOIC D 14 55 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LMC6484IM
LMC6484IMX NRND SOIC D 14 2500 Non-RoHS
& Green Call TI Call TI -40 to 85 LMC6484IM
LMC6484IMX/NOPB ACTIVE SOIC D 14 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LMC6484IM
LMC6484IN/NOPB ACTIVE PDIP NFF 14 25 RoHS & Green SN Level-1-NA-UNLIM -40 to 85 LMC6484IN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
www.ti.com 13-Apr-2021
Addendum-Page 2
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LMC6484AIMX SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1
LMC6484AIMX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1
LMC6484IMX SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1
LMC6484IMX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 1-May-2020
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LMC6484AIMX SOIC D 14 2500 367.0 367.0 35.0
LMC6484AIMX/NOPB SOIC D 14 2500 367.0 367.0 35.0
LMC6484IMX SOIC D 14 2500 367.0 367.0 35.0
LMC6484IMX/NOPB SOIC D 14 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 1-May-2020
Pack Materials-Page 2
MECHANICAL DATA
N0014A
www.ti.com
N14A (Rev G)
NFF0014A
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