1. Product profile
1.1 General description
PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications
General-purpose switching and amplification
Mobile applications
1.4 Quick reference data
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
Rev. 1 — 21 February 2012 Product data sheet
SOT883B
Table 1. Product overview
Type number Package NPN complement
NXP JEITA JEDEC
BC857AMB SOT883B - - BC847AMB
BC857BMB SOT883B - - BC847BMB
BC857CMB SOT883B - - BC847CMB
Leadless ultra small SMD plastic
package
Power dissipation comparable to SOT23
Low package height of 0.37 mm AEC-Q101 qualified
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 100 mA
hFE DC current gain VCE =5V; I
C=2mA
BC857AMB 125 - 250
BC857BMB 220 - 475
BC857CMB 420 - 800
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 2 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
2. Pinning information
3. Ordering information
4. Marking
[1] For SOT883B binary marking code description, see Figure 1.
4.1 Binary marking code description
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector 3
1
2
Transparent
top view
sym013
3
2
1
Tabl e 4. Ordering information
Type number Package
Name Description Version
BC857xMB series - leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.37 mm SOT883B
Table 5. Marking codes
Type number Marking code[1]
BC857AMB 0100 0100
BC857BMB 0100 0101
BC857CMB 0100 0110
Fig 1. SOT883B binary marking code descri ption
MARKING CODE
(EXAMPLE)
PIN 1 INDICATION READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac673
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 3 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 5V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp1ms -200 mA
IBM peak base current single pulse;
tp1ms -100 mA
Ptot total power dissipation Tamb 25 C[1][2] -250mW
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 4 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 500 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junc tio n to ambient as a function of pulse du ration; typical values
006aab603
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05 0.02
0.01
0
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 5 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
7. Characteristics
[1] Pulse test: tp300 s; 0.02.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base
cut-off current VCB =30 V; IE=0A - - 15 nA
VCB =30 V; IE=0A;
Tj= 150 C--5A
IEBO emitter-base
cut-off current VEB =5V; I
C=0A - - 100 nA
hFE DC current gain VCE =5V; I
C=2mA
BC857AMB 125 - 250
BC857BMB 220 - 475
BC857CMB 420 - 800
VCEsat collector-emitter
saturation voltage IC=10 mA; IB=0.5 mA - - 200 mV
IC=100 mA; IB=5mA [1] --400 mV
VBE base-emitter voltage IC=2mA; V
CE =5V 600 - 750 mV
IC=10 mA; VCE =5V - - 820 mV
fTtransition frequency VCE =5V; I
C=10 mA;
f = 100 MHz 100 - - MHz
Cccollector capacitance VCB =10 V; IE=i
e=0A;
f=1MHz --2.5pF
NF noise figure IC=200 A; VCE =5V;
RS=2k; f = 1 kHz;
B=200Hz
--10dB
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 6 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
VCE =5V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
VCE =5V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 3. BC857AMB: DC current gain as a function of
collector current; typical valu es Fig 4. BC857AMB: Base-emitter voltage as a function
of collector current; typica l val ue s
IC/IB=20
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
IC/IB=20
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 5. BC857 A MB: Colle c tor-emitter saturation
voltage as a function of collector current;
typical valu e s
Fig 6. BC857AMB: Base-emitter saturation voltage
as a function of collector current; typical
values
0
500
100
200
300
400
mle188
−10−2−10−1
(1)
−1IC (mA)
hFE
−10 −102−103
(2)
(3)
−200
−1200
−400
−600
−800
−1000
mle189
−10
−2
−10
−1
(1)
−1I
C
(mA)
V
BE
(mV)
−10 −10
2
−10
3
(3)
(2)
−104
−103
−102
−10
mle190
−10−1−1−10 IC (mA)
VCEsat
(mV)
−102−103
(1)
(2)
(3)
−200
−1200
−400
−600
−800
−1000
mle191
−1−10−1IC (mA)
VBEsat
(mV)
−10 −102−103
(1)
(3)
(2)
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 7 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
VCE =5V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
VCE =5V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 7. BC857BMB: DC current gain as a function of
collector current; typical valu es Fig 8. BC857BMB: Base-emitter voltage as a function
of collector current; typica l val ue s
IC/IB=20
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
IC/IB=20
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 9. BC857 B MB: Colle c tor-emitter saturation
voltage as a function of collector current;
typical valu e s
Fig 10. BC857BMB: Base-emitter saturation voltage
as a function of collector current; typical
values
0
1000
200
400
600
800
mle192
−10−2−10−1
(1)
−1IC (mA)
hFE
−10 −102−103
(2)
(3)
−200
−1200
−400
−600
−800
−1000
mle193
−10−2−10−1
(1)
−1IC (mA)
VBE
(mV)
−10 −102−103
(3)
(2)
−10
4
−10
3
−10
2
−10
mle194
−10
−1
−1−10 I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
(2)
(3)
(1)
−200
−1200
−400
−600
−800
−1000
mle195
−1−10
−1
I
C
(mA)
V
BEsat
(mV)
−10 −10
2
−10
3
(1)
(3)
(2)
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 8 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
VCE =5V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
VCE =5V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 11. BC857CMB: DC current gain as a function of
collector current; typical valu es Fig 12. BC857CMB: Base-emitter voltage as a function
of collector current; typica l val ue s
IC/IB=20
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
IC/IB=20
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 13. BC857 C MB: Collec tor-emitter saturation
voltage as a function of collector current;
typical valu e s
Fig 14. BC857CMB: Base-emitter saturation voltage
as a function of collector current; typical
values
0
1000
200
400
600
800
mle196
−10−2−10−1
(1)
−1IC (mA)
hFE
−10 −102−103
(2)
(3)
−200
−1200
−400
−600
−800
−1000
mle197
−1−10−1IC (mA)
VBE
(mV)
−10 −102−103
(2)
(1)
(3)
−104
−103
−102
−10
mle198
−10−1−1−10 IC (mA)
VCEsat
(mV)
−102−103
(2)
(3)
(1)
−200
−1200
−400
−600
−800
−1000
mle199
−1−10−1IC (mA)
VBEsat
(mV)
−10 −102−103
(1)
(3)
(2)
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 9 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 15. Package outline SOT883B
11-11-02Dimensions in mm
2
3
0.55
0.47
0.30
0.22
1
0.40
0.34
0.30
0.22
0.20
0.12
0.65
0.04 max
0.35
0.65
0.55
1.05
0.95
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
BC857xMB series SOT 883B 2 mm pitch, 8 mm tape and reel -3 15
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 10 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint SOT883B
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2x)
0.4
(2x)
0.25
(2x)
R0.05 (8x)
0.7
Footprint information for reflow soldering SOT883B
sot883b_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 11 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC857XMB_SER v.1 20120221 Product data sheet - -
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 12 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
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contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applic ations that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyri ghts, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BC857XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 21 February 2012 13 of 14
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BC857xMB series
45 V, 100 mA PNP general-purpose transistors
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 February 2012
Document identi fier: BC857XMB_SER
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4.1 Binary marking code description. . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
