PD - 95301 IRF7403PbF HEXFET(R) Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V RDS(on) = 0.022 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter I D @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 9.7 8.5 5.4 34 2.5 0.02 20 5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units 50 C/W 9/30/04 IRF7403PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 30 1.0 8.4 Typ. 0.024 10 37 42 40 RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance 2.5 LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1200 450 160 V(BR)DSS IGSS 4.0 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.022 VGS = 10V, ID = 4.0A 0.035 VGS = 4.5V, I D = 3.4A V VDS = V GS, ID = 250A S VDS = 15V, ID = 4.0A 1.0 VDS = 24V, V GS = 0V A 25 VDS = 24V, V GS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 57 ID = 4.0A 6.8 nC VDS = 24V 18 VGS = 10V, See Fig. 6 and 12 VDD = 15V ID = 4.0A ns RG = 6.0 RD = 3.7, See Fig. 10 D nH Between lead tip and center of die contact pF VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units 3.1 34 52 93 1.0 78 140 A V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 2.0A, V GS = 0V TJ = 25C, IF = 4.0A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. ISD 4.0A, di/dt 180A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 10sec. max. junction temperature. ( See fig. 11 ) TJ 150C IRF7403PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 4.5V 10 20s PULSE WIDTH TJ = 25C 1 0.01 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 0.1 1 10 A 100 4.5V 10 20s PULSE WIDTH TJ = 150C 1 0.01 100 0.1 Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C V DS = 50V 15V 20s PULSE WIDTH 4 5 6 7 8 9 A 100 Fig 2. Typical Output Characteristics 2.0 1000 10 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100 1 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics I D = 6.7A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRF7403PbF 2400 V GS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 16 Ciss 1600 I D = 4.0A VDS = 24V 12 Coss 1200 800 Crss 400 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 12 0 A 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 20 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 3.0 100us 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 A IRF7403PbF VDS VGS 10.0 ID , Drain Current (A) D.U.T. RG 8.0 RD + - VDD 10 V Pulse Width 1 s Duty Factor 0.1 % 6.0 Fig 10a. Switching Time Test Circuit 4.0 VDS 90% 2.0 0.0 25 50 75 100 125 10% VGS 150 TC , Case Temperature ( C) td(on) Fig 9. Maximum Drain Current Vs. Ambient Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7403PbF Current Regulator Same Type as D.U.T. 50K QG .2F 12V .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 12a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit IRF7403PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* + - * V DD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For N-Channel HEXFETS [ISD ] IRF7403PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A A INCHES MAX MIN .0532 .0688 1.35 A1 .0040 8 6 7 6 5 H E 1 2 3 0.25 [.010] 4 A e e1 0.25 [.010] 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b .0098 MAX 1.75 b e1 6X MILLIMET ERS MIN y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER IRF7403PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04