HEXFET® Power MOSFET
PD - 95301
9/30/04
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
lLead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7403PbF
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
SO-8
VDSS = 30V
RDS(on) = 0.022Ω
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 9.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 8.5
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.4
IDM Pulsed Drain Current 34
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
Thermal Resistance Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
IRF7403PbF
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30   V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  0.024  V/°C Reference to 25°C, ID = 1mA
  0.022 VGS = 10V, ID = 4.0A
  0.035 VGS = 4.5V, ID = 3.4A
VGS(th) Gate Threshold Voltage 1.0   V VDS = VGS, ID = 250µA
gfs Forward Transconductance 8.4   S VDS = 15V, ID = 4.0A
  1.0 VDS = 24V, VGS = 0V
  25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage   100 VGS = 20V
Gate-to-Source Reverse Leakage   -100 VGS = -20V
QgTotal Gate Charge   57 ID = 4.0A
Qgs Gate-to-Source Charge   6.8 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge   18 VGS = 10V, See Fig. 6 and 12
td(on) Turn-On Delay Time  10  VDD = 15V
trRise Time  37  ID = 4.0A
td(off) Turn-Off Delay Time  42  RG = 6.0Ω
tfFall Time  40  RD = 3.7Ω, See Fig. 10
Between lead tip
and center of die contact
Ciss Input Capacitance  1200  VGS = 0V
Coss Output Capacitance  450  pF VDS = 25V
Crss Reverse Transfer Capacitance  160  = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage   1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V
trr Reverse Recovery Time  52 78 ns TJ = 25°C, IF = 4.0A
Qrr Reverse RecoveryCharge  93 140 nC di/dt = 100A/µs
ton Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
  34
  3.1
A
S
D
G
IGSS
IDSS Drain-to-Source Leakage Current
LSInternal Source Inductance  4.0 
LDInternal Drain Inductance  2.5 
nH
ns
nA
µA
Ω
RDS(ON) Static Drain-to-Source On-Resistance
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7403PbF
10
100
1000
4 5 6 7 8 9 10
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 6.7A
D
1
10
100
1000
0.01 0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
A
4.5V
J
1
10
100
1000
0.01 0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4. 5V
20µs PULSE WIDTH
T = 150°C
A
4.5V
J
15V
IRF7403PbF
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 102030405060
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 12
I = 4.0A
V = 24V
D
DS
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T = 25°C
T = 150°C
JJ
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7403PbF
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RG
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7403PbF
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
QG
QGS QGD
VG
Charge
10 V
IRF7403PbF
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For N-Channel HEXFETS
IRF7403PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MI N MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT PR INT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS -012 AA.
NOT ES :
1. DIME NSIONING & TOL ERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MIL L IME T ER
3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
5 DIME NS ION DOE S NOT INCL UDE MOLD PR OT RUS IONS .
6 DIME NS ION DOE S NOT INCL UDE MOLD PR OT RUS IONS .
MOL D PROT RUS IONS NOT T O EXCEE D 0.25 [.010].
7 DIMENSION IS THE LENGT H OF LE AD FOR SOLDERING T O
A SUBST RAT E .
MOL D PROT RUS IONS NOT T O EXCEE D 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INTERNAT IONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S I T E CODE
IRF7403PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04