1N5711 / 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features * For general purpose applications * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. 94 9367 Mechanical Data Case: DO-35 Glass Case Weight: approx. 125 mg Packaging Codes/Options: TR / 10 k per 13 " reel (52 mm tape), 50 k/box TAP / 10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part Ordering code Marking Remarks 1N5711 1N5711-TR or 1N5711-TAP - Tape and Reel / Ammopack 1N6263 1N6263-TR or 1N6263-TAP - Tape and Reel / Ammopack Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Peak inverse voltage Test condition Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 Power dissipation (infinite heatsink) Ptot 400 Maximum single cycle surge 10 s square wave IFSM 2.0 1) 1) V mW A Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85645 Rev. 1.3, 26-Apr-04 www.vishay.com 1 1N5711 / 1N6263 VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Thermal resistance junction to ambient air Value RthJA 0.3 Unit C/mW 1) Junction temperature Tj 125 C Storage temperature range TS - 55 to + 175 C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition IR = 10 A Reverse breakdown voltage Leakage current Part Symbol Min 1N5711 VR 70 1N6263 VR 60 VR = 50 V Forward voltage drop Typ. Max Unit V V IR 200 nA IF = 1.0 mA VF 0.41 V IF = 15 mA VF 1.0 V 1N5711 Ctot 2.0 pF 1N6263 Ctot 2.2 pF trr 1.0 ns Junction capacitance VR = 0 V, f = 1.0 MHz Reverse recovery time IF = IR = 5.0 mA, recover to 0.1 IR Typical Characteristics (Tamb = 25 C unless otherwise specified) 100 I F - Forward Current ( mA ) I F - Forward Current ( mA ) 10 1 0.1 0.01 60 40 20 0 0 18529 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage ( V ) Fig. 1 Typical Variation of Forward Current vs. Forward Voltage www.vishay.com 2 80 18530 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage ( V ) Fig. 2 Typical Forward Conduction Curve Document Number 85645 Rev. 1.3, 26-Apr-04 1N5711 / 1N6263 VISHAY Vishay Semiconductors 2.0 150 C C T - Typical Capacitance ( pF ) 100 I R - Reverse Current ( A ) 125 C 10 100 C 75 C 1 50 C 0.1 25 C 0.01 0 10 20 30 40 VR - Reverse Voltage ( V ) 18531 Fig. 3 Typical Variation of Reverse Current at Various Temperatures 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 18532 T j = 25 C 1.8 0 10 20 30 40 50 VR - Reverse Voltage ( V ) Fig. 4 Typical Capacitance Curve as a Function of Reverse Voltage Package Dimensions in mm (Inches) Cathode Identification 0.55 (0.02) max. ISO Method E 94 9366 2.0 (0.08) max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Document Number 85645 Rev. 1.3, 26-Apr-04 26 (1.02) min. 3.9 (0.15) max. 26 (1.02) min. www.vishay.com 3 1N5711 / 1N6263 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85645 Rev. 1.3, 26-Apr-04