VISHAY
1N5711 / 1N6263
Document Number 85645
Rev. 1.3, 26-Apr-04
Vishay Semiconductors
www.vishay.com
1
94 9367
Schottky Diodes
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low
logic level applications.
• This diode is also available in the MiniMELF case
with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 125 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Part Ordering code Marking Remarks
1N5711 1N5711-TR or 1N5711-TAP - Tape and Reel / Ammopack
1N6263 1N6263-TR or 1N6263-TAP - Tape and Reel / Ammopack
Parameter Test condition Part Symbol Value Unit
Peak inverse voltage 1N5711 VRRM 70 V
1N6263 VRRM 60 V
Power dissipation
(infinite heatsink)
Ptot 4001) mW
Maximum single cycle surge
10 µs square wave
IFSM 2.0 A
www.vishay.com
2
Document Number 85645
Rev. 1.3, 26-Apr-04
VISHAY
1N5711 / 1N6263
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RthJA 0.31) °C/mW
Junction temperature Tj125 °C
Storage temperature range TS- 55 to + 175 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 10 µA 1N5711 VR70 V
1N6263 VR60 V
Leakage current VR = 50 V IR200 nA
Forward voltage drop IF = 1.0 mA VF0.41 V
IF = 15 mA VF1.0 V
Junction capacitance VR = 0 V, f = 1.0 MHz 1N5711 Ctot 2.0 pF
1N6263 Ctot 2.2 pF
Reverse recovery time IF = IR = 5.0 mA,
recover to 0.1 IR
trr 1.0 ns
Fig. 1 Typical Variation of Forward Current vs. Forward Voltage
0.01
0.1
1
10
0 0.4 0.6 0.8 1.00.2
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
18529
Fig. 2 Typical Forward Conduction Curve
0 0.4 0.6 0.8 1.00.2
60
20
80
40
0
100
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
18530
VISHAY
1N5711 / 1N6263
Document Number 85645
Rev. 1.3, 26-Apr-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Fig. 3 Typical Variation of Reverse Current at Various
Temperatures
100
10
1
0.1
0.01 10 20 30 40050
75 °C
50 °C
25 °C
150 °C
125 °C
100 °C
V
R
- Reverse Voltage(V)
I - Reverse Current ( µA)
R
18531
Fig. 4 Typical Capacitance Curve as a Function of Reverse
Voltage
18532
10 20 30 400
0
1.0
1.2
1.4
1.6
1.8
2.0
0.6
0.8
0.2
0.4
50
T
j
=25
°C
C - Typical Capacitance ( pF )
T
V
R
- Reverse Voltage(V)
Cathode Identification
∅2.0 (0.08) max.
∅0.55 (0.02) max.
3.9 (0.15) max.26 (1.02) min.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35 26 (1.02) min.
ISO Method E
www.vishay.com
4
Document Number 85645
Rev. 1.3, 26-Apr-04
VISHAY
1N5711 / 1N6263
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
