This product complies with the RoHS Directive (EU 2002/95/EC). DSC9F01 Silicon NPN epitaxial planar type For high-frequency amplification DSC5F01 in SSMini3 type package Package Features High forward current transfer ratio hFE with excellent linearity High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SSMini3-F3-B Pin Name 1. Base 2. Emitter 3. Collector Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: C7 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 10 V Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Forward current transfer ratio * hFE VCE = 4 V, IC = 5 mA VCE(sat) IC = 20 mA, IB = 4 mA fT VCE = 4 V, IC = 5 mA 1.9 GHz VCB = 4 V, IE = 0 , f = 1 MHz 1.2 pF VCE = 4 V, IC = 5 mA , f = 31.9 MHz 12 ps VCE = 4 V, IC = 0 , f = 1 MHz 0.6 pF Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Cob rbb' * CC Collector-base parameter Reverse transfer capacitance (Common base) Crb 75 1 mA 220 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Code P Q 0 Rank P Q No-rank hFE 75 to 130 110 to 220 75 to 220 Marking Symbol C7P C7Q C7 Product of no-rank is not classified and have no marking symbol for rank. Publication date: November 2010 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSC9F01_PC-Ta DSC9F01_IC-VCE PC Ta IC VCE 60 125 50 75 50 400 A 350 A 450 A IB = 500 A 40 250 A 30 200 A 20 150 A 100 A 40 80 120 160 0 200 50 A 0 2 4 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) 25C -30C 10 102 40 25C 30 Ta = 85C 10 0 0 0.2 0.4 fT IC Transition frequency fT (MHz) 2 000 VCE = 4 V Ta = 25C 1 200 800 400 10 -30C 20 DSC9F01_fT-IC 102 Collector current IC (mA) 2 80 -30C 40 0.6 0.8 Ver. AED 1 10 102 Collector current IC (mA) Cob VCB 1.0 Base-emitter voltage VBE (V) Collector current IC (mA) 1 25C DSC9F01_Cob-VCB VCE = 4 V Ta = 85C 0 10-1 120 0 10-1 12 50 1 1 Ta = 85C IC VBE IC / IB = 5 10-2 10-1 10 160 DSC9F01_IC-VBE VCE(sat) IC 10-1 8 VCE = 4 V Collector-emitter voltage VCE (V) DSC9F01_VCEsat-IC 10 6 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 Ambient temperature Ta (C) 1 600 300 A 10 25 0 hFE IC 200 Ta = 25C 100 DSC9F01_hFE-IC Forward current transfer ratio hFE 150 Collector current IC (mA) Collector power dissipation PC (mW) DSC9F01 2.0 IE = 0 f = 1 MHz Ta = 25C 1.6 1.2 0.8 0.4 0 1 10 102 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). DSC9F01 SSMini3-F3-B Unit: mm +0.05 1.60 -0.03 +0.05 0.375 0.05 0.26 -0.02 (5) 1.60 0.05 0.85 -0.03 +0.05 3 1 2 (0.50) +0.05 0.13 -0.02 (0.50) (0.45) 1.00 0.05 0 to 0.10 0.70 -0.03 +0.05 (5) Ver. 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