Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: November 2010 1
DSC9F01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5F01 in SSMini3 type package
Features
High forward current transfer ratio hFE with excellent linearity
High transition frequency fT
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 3 V
Collector current IC50 mA
Collector power dissipation PC125 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 10 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 1 mA
Forward current transfer ratio *hFE VCE = 4 V, IC = 5 mA 75 220
Collector-emitter saturation voltage VCE(sat) IC = 20 mA, IB = 4 mA 0.5 V
Transition frequency fTVCE = 4 V, IC = 5 mA 1.9 GHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 4 V, IE = 0 , f = 1 MHz 1.2 pF
Collector-base parameter rbb' • CCVCE = 4 V, IC = 5 mA , f = 31.9 MHz 12 ps
Reverse transfer capacitance
(Common base) Crb VCE = 4 V, IC = 0 , f = 1 MHz 0.6 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code P Q 0
Rank P Q No-rank
hFE 75 to 130 110 to 220 75 to 220
Marking Symbol C7P C7Q C7
Product of no-rank is not classified and have no marking symbol for rank.
Package
Code
SSMini3-F3-B
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: C7
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC9F01
2
PC Ta IC VCE hFE IC
VCE(sat) IC IC VBE Cob VCB
00 20016040 12080
25
125
100
75
50
150
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
DSC9F01_PC-Ta
00 122 104 86
60
40
50
30
20
10
Collector current IC (mA)
Collector-emitter voltage VCE (V)
DSC9F01_IC-VCE
Ta = 25°C
IB = 500 µA
50 µA
150 µA
100 µA
200 µA
250 µA
300 µA
350 µA
400 µA
450 µA
0
10−1
200
160
120
80
40
1 10 102
Forward current transfer ratio hFE
Collector current IC (mA)
DSC9F01_hFE-IC
25°C
−30°C
Ta = 85°C
VCE = 4 V
10−2
10−1
10−1
1
10
1 10 102
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
DSC9F01_VCEsat-IC
25°C
−30°C
Ta = 85°C
IC / IB = 5
00 1.20.2 1.00.4 0.80.6
50
40
30
20
10
Collector current IC (mA)
Base-emitter voltage VBE (V)
DSC9F01_IC-VBE
−30°C
25°C
Ta = 85°C
VCE = 4 V
01
2.0
1.6
1.2
0.8
0.4
10 102
Collector-base voltage VCB (V)
DSC9F01_Cob-VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IE = 0
f = 1 MHz
Ta = 25°C
fT IC
0
10−1
2
000
1
600
1
200
800
400
1 10 102
Transition frequency fT (MHz)
Collector current IC (mA)
DSC9F01_fT-IC
VCE = 4 V
Ta = 25°C
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC9F01
3
SSMini3-F3-B Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05
−0.03
0.26 +0.05
−0.02
1 2
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)
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semiconductors described in this book
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