MJW21192G - ON SEMICONDUCTOR - Datasheet.Directory

March, 2010 − Rev. 3

1Publication Order Number:

MJW21192/D

MJW21192 (NPN),

MJW21191 (PNP)

Complementary Silicon

Plastic Power Transistors

Specifically designed for power audio output, or high power drivers

in audio amplifiers.

•DC Current Gain Specified up to 8.0 A at Temperature

•All On Characteristics at Temperature

•High SOA: 20 A, 18 V, 100 ms

•TO−247AE Package

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol

MJW21191

MJW21192 Unit

Collector−Emitter Voltage VCEO 150 Vdc

Collector−Base Voltage VCB 150 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current −Continuous

−Peak

IC8.0

Adc

Base Current IB2.0 Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD125

0.65

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to

+ 150

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RqJC 1.0 _C/W

Thermal Resistance, Junction to Ambient RqJA 50 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1.0

Figure 1. Typical Capacitance @ 25°C

VR, REVERSE VOLTAGE (V)

1.0

10 100 1000

100

1000

C, CAPACITANCE (pF)

NPN

PNP

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MJW21191 TO−247 30 Units/Rail

MARKING DIAGRAM

8.0 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

150 V, 125 W

x = 1 or 2

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MJW21191G TO−247

(Pb−Free)

30 Units/Rail

MJW21192 TO−247 30 Units/Rail

MJW21192G TO−247

(Pb−Free)

30 Units/Rail

http://onsemi.com

TO−247

CASE 340L

STYLE 3

123

MJW2119x

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

MJW21192 (NPN), MJW21191 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

150 −

Vdc

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

ICES

−10

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−10

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)

(IC = 8.0 Adc, VCE = 2.0 Vdc)

hFE

5.0

100

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 0.4 Adc)

(IC = 8.0 Adc, IB = 1.6 Adc)

VCE(sat)

−

1.0

2.0

Vdc

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 2.0 Vdc)

VBE(on) −2.0 Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT4.0 −MHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• ftest.

ZθJC(t) = r(t) RθJC

RθJC = 1.65°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

DUTY

CYCLE,

D = t1/t2

Figure 2. Thermal Response

t, TIME (s)

TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

1.0

0.1

D = 0.5

0.00001 0.0001 0.001 0.01 0.1 1.0 10

0.2

0.05

0.02

0.01

100 1000

0.01

0.1

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation then the curves indicate.

The data of Figures 3 and 4 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in

Figure 2. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

MJW21192 (NPN), MJW21191 (PNP)

http://onsemi.com

Figure 3. NPN — MJW21192

Safe Operating Area

Figure 4. PNP — MJW21191

Safe Operating Area

NPN — MJW21192 PNP — MJW21191

100 ms

10 ms

250 ms

100

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

1000

1.0

0.1

100

250ms

100 ms

10ms

100

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

10 1000

1.0

100

0.1

TYPICAL CHARACTERISTICS

Figure 5. NPN — MJW21192

VCE = 2.0 V DC Current Gain

Figure 6. PNP — MJW21191

VCE = 2.0 V DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

25°C

50°C

100°C

1000

0.01 1.0 100

100

1.0

0.1 10

, DC CURRENT GAIN

25°C

50°C

100°C

1000

0.01

IC, COLLECTOR CURRENT (AMPS)

1.0

hFE, DC CURRENT GAIN

100

1.0

0.1 10

NPN — MJW21192 PNP — MJW21191

MJW21192 (NPN), MJW21191 (PNP)

http://onsemi.com

IC, COLLECTOR CURRENT (AMPS)

Figure 7. NPN — MJW21192

VCE = 5.0 V DC Current Gain

Figure 8. PNP — MJW21191

VCE = 5.0 V DC Current Gain

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

0.01

V, VOLTAGE (VOLTS)

NPN — MJW21192 PNP — MJW21191

V, VOLTAGE (VOLTS)

Figure 9. NPN — MJW21192

VCE(sat) IC/IB = 5.0

Figure 10. PNP — MJW21191

VCE(sat) IC/IB = 5.0

101.0

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

0.01

Figure 11. NPN — MJW21192

VCE(sat) IC/IB = 10

Figure 12. PNP — MJW21191

VCE(sat) IC/IB = 10

101.0

25°C

100°C

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

0.01

100.1 1.0

25°C

100°C

V, VOLTAGE (VOLTS)

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.01

101.0

V, VOLTAGE (VOLTS)

25°C

100°C

25°C

100°C

IC, COLLECTOR CURRENT (AMPS)

25°C

50°C

100°C

1000

0.01 1.0 100

100

1.0

0.1 10

, DC CURRENT GAIN

h , DC CURRENT GAIN

25°C

50°C

100°C

1000

0.01 1.0 100

100

1.0

0.1 10

0.1

SPACE

MJW21192 (NPN), MJW21191 (PNP)

http://onsemi.com

IC, COLLECTOR CURRENT (AMPS)

Figure 13. NPN — MJW21192

VCE = 2.0 V VBE

(

)

Curve

Figure 14. PNP — MJW21191

VCE = 2.0 V VBE(on) Curve

NPN — MJW21192 PNP — MJW21191

1.0

0.1

V, VOLTAGE (VOLTS)

100.001 1.0

25°C

100°C

50°C

0.01 0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

V, VOLTAGE (VOLTS)

100.001 1.0

25°C

100°C

50°C

0.01 0.1

MJW21192 (NPN), MJW21191 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

TO−247

CASE 340L−02

ISSUE E

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

0.25 (0.010) MYQS

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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MJW21192/D

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