BCV61 NPN Silicon Double Transistor * To be used as a current mirror * Good thermal coupling and VBE matching 3 2 * High current gain 4 1 * Low collector-emitter saturation voltage * Pb-free (RoHS compliant) package * Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration Package BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 30 VCBO 30 Emitter-base voltage VEBS 6 DC collector current IC 100 Peak collector current, tp < 10 ms ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS = 99 C Ptot 300 mW Junction temperature Tj 150 C Storage temperature Tstg Value Unit V (transistor T1) Collector-base voltage (open emitter) (transistor T1) mA -65 ... 150 Thermal Resistance Junction - soldering point1) 1For calculation of R RthJS 170 K/W thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-13 BCV61 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 30 - - V(BR)CBO 30 - - V(BR)EBO 6 - - ICBO - - 15 nA ICBO - - 5 A hFE 100 - - - IC = 2 mA, VCE = 5 V, BCV61B 200 290 450 IC = 2 mA, VCE = 5 V, BCV61C 420 520 800 DC Characteristics of T1 Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain1) IC = 0.1 mA, VCE = 5 V DC current gain1) hFE Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 Base-emitter saturation voltage1) VBEsat Base-emitter voltage1) VBE(ON) 1Puls test: t 300 s, D = 2% 2 2011-10-13 BCV61 Electrical Characteristics at T A = 25C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. Characteristics Base-emitter forward voltage V VBES IE = 10 A IE = 250 mA Matching of transistor T1 and transistor T2 0.4 - - - - 1.8 IC1 / I C2 at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 C 0.7 - 1.3 TA = 150 C 0.7 - 1.3 IE2 - 5 - mA fT - 250 - MHz Ccb - 0.95 - pF Ceb - 9 - F - 2 - dB h11e - 4.5 - k h12e - 2 - 10 -4 h21e 100 - 900 h22e - 30 - Thermal coupling of transistor T1 and transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1 AC characteristics for transistor T1 Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure I C = 200 A, V CE = 5 V, R S = 2 k, f = 1 kHz, f = 200 Hz Short-circuit input impedance I C = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio I C = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio - I C = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance S I C = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 2011-10-13 BCV61 Test circuit for current matching A C1 VCE1 ... 2 1 T1 E2 = constant T2 3 4 VCO VCO EHN00001 Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1/IE2 = 1.3 A C1 VCE1 ... 2 T1 1 E2 = constant T2 3 RE 4 RE EHN00002 Note: BCV61 with emitter resistors 4 2011-10-13 BCV61 Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = f(TS) Emitter-base capacitance Ceb = (VEB) 350 12 pF mW 9 250 8 Ptot CCB(CEB ) 10 7 200 6 150 5 CEB 4 100 3 2 50 1 CCB 0 0 4 8 12 16 V 0 0 22 VCB(VEB 15 30 45 60 75 90 105 120 C 150 TS Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 BCV 61 EHP00942 Ptot max 5 Ptot DC D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-13 Package SOT143 BCV61 2 0.1 MAX. 10 MAX. 1 1 0.1 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 A 5 0...8 0.2 M A 0.25 M B 1.7 0.08...0.1 1.3 0.1 3 2.4 0.15 4 B 10 MAX. 2.9 0.1 1.9 0.15 MIN. Package Outline Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 1.2 0.8 0.8 Marking Layout (Example) RF s 56 Manufacturer Pin 1 2005, June Date code (YM) BFP181 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 6 2011-10-13 BCV61 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-13