TLP181
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP181
Office Machine
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA mini flat coupler TLP181 is a small outline coupler,
suitable for surface mount assembly.
TLP181 consist of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
Collectoremitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577,
file no. E67349
Option (V4) type
VDE approved: EN 60747-5-2 satisfied
Maximum operating insulation voltage: 565VPK
Highest permissible over voltage: 6000VPK
BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
Pin Configuration (top view)
6
1: Anode
3: Cathode
4: Emitter
6: Collector
4
1
3
Unit in mm
TOSHIBA 114C1
Weight: 0.09 g
TLP181
2007-10-01
2
Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type Classification
*1
Min. Max.
Marking Of Classification
(None) 50 600 BLANK, Y, Y, G, G, B, B, GB
Rank Y 50 150 Y, Y
Rank GR 100 300 G, G
Rank BL 200 600 B, B
TLP181
Rank GB 100 600 G, G, B, B, GB
*1: EX, Rank GB: TLP181 (GB)
(Note) Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181
TLP181
2007-10-01
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current detating ΔIF / °C 0.7 (Ta 53°C) mA / °C
Pulse forward current
(100μs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collectoremitter voltage VCEO 80 V
Emittercollector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 Circuit) PC 150 mW
Collector power dissipation
derating (1 Circuit Ta 25°C) ΔPC / °C 1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg 55~125 °C
Operating temperature range Topr 55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
derating (Ta 25°C) ΔPT / °C 2.0 mW / °C
Isolation voltage
(AC, 1min., R.H. 60%) (Note 1) BVS 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a twoterminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 48 V
Forward current IF 16 20 mA
Collector current IC 1 10 mA
Operating temperature Topr 25
85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP181
2007-10-01
4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V 10 μA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Collectoremitter
breakdown voltage V(BR) CEO I
C = 0.5 mA 80 V
Emittercollector
breakdown voltage V(BR) ECO I
E = 0.1 mA 7 V
VCE = 48 V, ( Ambient light
below 1000 lx) 0.01
(2)
0.1
(10) μA
Collector dark current ICEO
VCE = 48 V, Ta = 85°C, ( Ambient
light below 1000 lx) 2
(4)
50
(50) μA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz 10 pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 —
%
IC = 2.4 mA, IF = 8 mA 0.4
— 0.2 —
Collectoremitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB — — 0.4
V
Offstate collector current IC (off) V
F = 0.7V, VCE = 48 V 1 10 μA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance
(input to output) CS VS = 0V, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60% 1×1012 1014
AC, 1 minute 3750
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 Vdc
TLP181
2007-10-01
5
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turnon time ton — 3 —
Turnoff time toff
VCC = 10 V, IC = 2 mA
RL = 100
— 3 —
μs
Turnon time tON — 2 —
Storage time ts — 25 —
Turnoff time tOFF
RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA
— 40 —
μs
Fig. 1 Switching time test circuit
tOFF
tON
VCE
IF
tS
4.5V
0.5V
IF VCC
RL
VCE
TLP181
2007-10-01
6
PC – Ta
200
20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
3
Pulse width 100μs
Ta = 2 5°C
103 3 1023 101 3 100
30
50
100
300
1000
500
ΔVF / ΔTa IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa ( m V / ° C )
3.2
0.4
0.1
2.8
2.4
2.0
1.6
1.2
0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
Pulse width 10μs
Repetitive
frequency = 100Hz
Ta = 25°C
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
20
80
60
40
20
0
0 20 40 60 80 100 120
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
25°C 85°C 25
°C
TLP181
2007-10-01
7
Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50
mA
30mA
2
0
mA
1
5
mA
10mA
PC (MAX.)
IF = 5mA
Ta = 25°C
Collector-emitter voltage VCE (V)
IC – VCE
30
0
0 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50
mA
Ta = 25°C
4
0
mA
30
mA
2
0
mA
10mA
5
mA
2mA
IC – IF
Forward current IF (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample A
Sample B
Ta = 25°C
VCE = 10V
VCE = 5V
VCE = 0.4V
Collector current IC (mA)
Forward current IF (mA)
1000
10
IC / IF – IF
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25°C
Current transfer ratio
I
C / IF (%)
Sample B
Sample A
Collector dark current ID(ICEO) (μA)
ICEO – Ta
0
101
VCE = 48V
5
V
1
0
V
24V
20 40 60 80 100
Ambient temperature Ta (°C)
100
10
1
10
2
10
3
10
4
TLP181
2007-10-01
8
Collector-emitter saturation
voltage VCE(sat) (V)
VCE(sat) – Ta
0.24
0
Ambient temperature Ta (°C)
40
0.20
0.12
0.08
0.04
20 0 40 80 100 20 60
0.16
IF = 1mA
IC = 0.2mA
IC – Ta
100
1
20 100
0 20 40 80
30
5
Collector current IC (mA)
VCE = 5V
60
0.1
0.3
0.5
3
10
50
1mA
0.5mA
5
mA
1
0
mA
IF = 25mA
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (k)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (μs)
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
100 10
Switching time (μs)
Switching Time – Ta
0
160
20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1
100
0.3
3
5
50 tOFF
ts
tON
IF = 16mA
VCC = 5V
RL = 1.9k
TLP181
2007-10-01
9
RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.