TO-92S Plastic-Encapsulate Transistors q& G.~ K596 Si N-CHANNEL JUNCTION FET TO-92S 1.SOURCE 2.GATE 3.DRAIN mw Power dissipation Po: 0.1 W (Tamb=25C) / Gate current Ic; 10 mA Bain current lo: 1 mA _Braln-source voltage BVcpo: -20 V Operating and storage junction temperature range Ts, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Gate-drain breakdown voltage BYVGpo I= -100L A -20 Vv Gate-source cut-off voltage VGS(off) Vos= 5 V, lo=th A -0.6 -1.5 Vv Drain current loss Vos= 5 V, Ves= 0 100 800 BA Forward transfer admittance lvesl Vos= 5 V, Vos=0,f1MHz | 0.4 1.2 mS Input capacitance Ciss Vos= 5 V, Ves= 0, f= MHz 3.5 pF Vos= 5 V, Ves= 0 Output capacitance Crss 0.65 pF f=1 MHz Classification A B Cc D E lpss(u A) 100-170 150-240 210-350 320-480 440-800 119