ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040; ID=5.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package * Motor control S ORDERING INFORMATION DEVICE S REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL S G ZXM64N02XTA 7 12mm embossed 1000 units ZXM64N02XTC 13 12mm embossed 4000 units DEVICE MARKING * ZXM4N02 ISSUE 1 - JUNE 2004 1 Top View 8 Disconnect switches D 6 7 * D 5 Power Management Functions 2 * 3 DC - DC Converters 4 * 1 APPLICATIONS D D ZXM64N02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate- Source Voltage V GS 12 V Continuous Drain Current (V GS=4.5V; T A=25C)(b) (V GS=4.5V; T A=70C)(b) ID 5.4 4.3 A Pulsed Drain Current (c) I DM 30 A Continuous Source Current (Body Diode)(b) IS 2.4 A I SM 30 A Power Dissipation at T A=25C (a) Linear Derating Factor Pulsed Source Current (Body Diode)(c) PD 1.1 8.8 W mW/C Power Dissipation at T A=25C (b) Linear Derating Factor PD 1.8 14.4 W mW/C Operating and Storage Temperature Range T j:T stg -55 to +150 C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 113 C/W Junction to Ambient (b) R JA 70 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JUNE 2004 2 ZXM64N02X Max Power Dissipation (Watts) TYPICAL CHARACTERISTICS 100 ID - Drain Current (A) Refer Note (a) 10 DC 1s 100ms 10ms 1ms 100us 1 100m 0.1 1 10 100 2.0 1.5 Refer Note (b) Refer Note (a) 1.0 0.5 0 0 20 40 60 80 100 120 VDS - Drain-Source Voltage (V) T - Temperature (C) Safe Operating Area Derating Curve 140 160 Ref Note (a) 120 Themal Resistance (C/W) Thermal Resistance (C/W) 80 60 40 D=0.5 20 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) 90 60 D=0.5 30 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance Refer Note (b) Refer Note (a) ISSUE 1 - JUNE 2004 3 1000 ZXM64N02X ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 20 V I D=250A, V GS=0V 1 A V DS=20V, V GS=0V 100 nA V GS= 12V, V DS=0V V I D =250A, V DS= V GS V GS=4.5V, I D=3.8A V GS=2.7V, I D=1.9A S V DS=10V,I D=1.9A 0.7 0.040 0.050 6.1 DYNAMIC (3) Input Capacitance C iss 1100 pF Output Capacitance C oss 350 pF Reverse Transfer Capacitance C rss 100 pF Turn-On Delay Time t d(on) 5.7 ns Rise Time tr 9.6 ns Turn-Off Delay Time t d(off) 28.3 ns Fall Time tf 11.6 ns Total Gate Charge Qg 16 nC Gate-Source Charge Q gs 3.5 nC Gate Drain Charge Q gd 5.4 nC Diode Forward Voltage (1) V SD 0.95 V T j=25C, I S=3.8A, V GS=0V Reverse Recovery Time (3) t rr 23.7 ns T j=25C, I F=3.8A, di/dt= 100A/s Reverse Recovery Charge(3) Q rr 13.3 nC V DS=15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =10V, I D=3.8A R G=6.2, R D=2.6 (Refer to test circuit) V DS=16V,V GS=4.5V, I D =3.8A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004 4 ZXM64N02X TYPICAL CHARACTERISTICS 2.5V 2.0V 1 1.5V 0.1 100 1 VGS 5V 4.5V 4.0V 3.5V 3.0V 2.5V +150C 10 2.0V 1.5V 1 0.1 10 0.1 1 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics VDS=10V 10 T=150C T=25C 1 0.1 100 ID - Drain Current (A) 25C 10 0.1 ID - Drain Current (A) VGS 5.0V 4.5V 4.0V 3.5V 3.0V Normalised RDS(on) and VGS(th) ID - Drain Current (A) 100 1.5 2 2.5 3 1.6 RDS(on) 1.4 VGS=4.5V ID=3.8A 1.2 1.0 0.8 VGS(th) 0.6 0.4 VGS=VDS ID=250A 0.2 0 -100 VGS - Gate-Source Voltage (V) -50 0 50 100 150 200 Tj - Junction Temperature (C) Normalised RDS(on) and VGS(th) Typical Transfer Characteristics ISD - Reverse Drain Current (A) RDS(on) - Drain-Source On-Resistance () v Temperature 1 0.1 VGS=2.0V VGS=2.5V 0.01 VGS=4.5V 0.1 1 10 100 100 10 1 T=25C T=150C 100m 0 0.5 1 1.5 2 ID - Drain Current (A) VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage ISSUE 1 - JUNE 2004 5 ZXM64N02X 2000 Vgs=0V f=1Mhz 1750 C - Capacitance (pF) VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS Ciss Coss Crss 1500 1250 1000 750 500 250 0 0.1 1 10 100 6.0 ID=3.8A 5.0 VDS=16V 4.0 3.0 2.0 1.0 0 0 2 4 6 8 10 12 14 16 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE 1 - JUNE 2004 6 ZXM64N02X PACKAGE DIMENSIONS DIM D Millimetres Inches MIN MIN A 7 1.10 MAX 0.043 6 5 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q 0 6 0 6 H E 8 MAX 1 2 3 4 eX6 A A1 B C L Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JUNE 2004 7