V
RRM
= 800 V - 1000 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Re
etitive
eak reverse volta
eV
RRM
V
1N3671A thru 1N3673AR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
Diode
Conditions
2. Reverse polarity (R): Stud is anode.
• Types from 800 V to 1000 V V
RRM
1N3671A (R)
800 1000
1N3673A (R)
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
V
R
= 50 V, T
j
= 175 °C
V
10
15
10
15
2.00 2.00
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
Reverse current I
R
V
F
A
560
800
12
240
700
1000
12
240
-55 to 150
1N3671A (R) 1N3673A (R)
1.1 1.1
-55 to 150
-55 to 150
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1