ON Semiconductor Power TMOS MOSFETs and Diodes Power TMOS MOSFETs (Continued) TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 N N-Channel TMOS V NTO-220AB Mfr.Os Type4 V(BR)DSS (V) Min. RDS(on) (1/2) Max. 1000 800 600 500 500 400 400 250 200 60 MTW10N100E MTW7N80E MTW8N60E MTW14N50E MTW20N50E MTW16N40E MTW24N40E MTW32N25E MTW32N20E ID (A) ID (Cont.) (A) PD1 (W) Max. 1.3000 1.0000 0.5000 0.3200 0.2400 0.3000 0.1600 0.1000 0.0750 5.00 3.50 4.00 7.00 10.00 8.00 12.00 16.00 16.00 10.0 7.0 8.0 14.0 20.0 16.0 24.0 32.0 32.0 250.00 180.00 180.00 180.00 250.00 180.00 250.00 250.00 180.00 0.1500 6.00 12.0 1.753 @ MTP3055V MTP15N06V MTP36N06V MTP50N06V MMDF3N04HDR2 MMDF6N02HDR2 MMSF10N02ZR2 TMOS V N DPAK 1 @ ID (A) ID (Cont.) (A) PD1 (W) Max. 60 60 60 60 0.1500 0.1200 0.0400 0.0280 6.00 7.50 16.00 22.50 12.0 15.0 32.0 42.0 40.00 53.00 88.00 107.00 40 20 20 0.0800 0.0350 0.0150 3.40 6.00 10.00 3.4 6.5 10.0 2.00 2.00 2.50 SO-8 TMOS V MTD3055V RDS(on) (1/2) Max. V(BR)DSS (V) Min. Mfr.Os Type4 TC=25C. 2Indicates Logic Level. 3Power rating when mounted on an FR-4 glass epoxy printed circuit board with the minimum recommended footprint. Diodes Tuning Diodes Hot-Carrier Diodes (Continued) Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts, General Purpose; Case 182 N TO-226AC (TO-92) N 2-Lead These devices exhibit high Q characteristics. Case 318-08 N TO-236AB (SOT-23) CT @ VR=4.0 V,1.0 MHz Mfr.Os Type 13 MV2109 (pF) Min. (pF) Nominal (pF) Max. 29.7 33.0 36.3 VR(BR)R (V) Cap. Ratio C4/C30 Min. Q 4.0 V, 50 MHz Typ. 30 2.5 200 Mfr.Os Type (pF) Min. MV104 2 (pF) Max. 37 (V) 42 Cap Ratio C3/C30 Min. 3.0 Q 3.0 V, 50 MHz Min. 2.5 V(BR)R (V) CT @VR (pF) Max. VF @ 10 mA (V) Max. IR @ VR (nA) Max. Minority Lifetime (ps) Typ. Device Marking Style MMBD701LT1 MMBD301LT1 MMBD101LT1 70.0 30.0 7.0 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 1.0 0.6 0.6 200 @ 35.0 V 200 @ 25.0 V 250 @ 3.0 V 15 15 N 5H 4T 4M 8 8 8 PIN Switching Diodes Abrupt Tuning Diodes for FM Radio N Dual; Case 29-04 N TO-226AA (TO-92) CT @ VR2 Mfr.Os Type Device Marking VR(BR)R (V) 100 32 N Style 15 Each Diode. Case 182 N TO-226AC (TO-92) The following PIN diodes are designed for VHF band switching and general-purpose low current switching applications. Mfr.Os Type V(BR)R (V) Min. MPN3404 (pF) Max. (V) IR @ VR (nA) Max. Series Resistance (1/2) Max. Device Marking Style 2.0 15 0.1 @ 25 V 0.85 @ 10 mA N 1 1.0 20 0.1 @ 25 V 0.70 @ 10 mA 4D 8 CT @ VR @ 1.0 MHz 20 Hyper-Abrupt Tuning Diodes For Telecommunications N Single; Case 182 N TO-226AC (TO-92) Mfr.Os Type MV209 CT @ VR (f=1.0 MHz) Q Cap. Ratio @ VR (pF) Min. (pF) Max. (V) Min. Max. 26.0 32.0 3.0 5.0 6.5 (V) 3.0 V Min. 50 MHz Max. 3/25 200 N V(BR)R (V) Device Marking Case Style 30 N 1 Hyper-Abrupt Tuning Diodes For Telecommunications N Single; Case 318-07 N TO-236AB (SOT-23) MMBV105GLT1 MMBV109LT1 1.8 26.0 2.8 32.0 25.0 3.0 4.0 5.0 6.0 6.5 3/25 3/25 200 200 N N 30 30 M4E M4A 8 8 Hyper-Abrupt Tuning Diodes for Communications N Dual; Case 318-07 N TO-236AB (SOT-23) MMBV609LT1 26.0 32.0 3.0 1.8 2.4 3/8 250 N 20 5L 9 Hot-Carrier Diodes Case 182 N TO-226AC (TO-92) The following is a listing of hot carrier (Schottky) diodes that exhibit low forward voltage drop for improved circuit efficiency. Mfr.Os Type MBD701 MBD301 V(BR)R (V) CT @VR (pF) Max. VF @ 10 mA (V) Max. IR @ VR (nA) Max. Minority Lifetime (ps) Typ. Device Marking Style 70.0 30.0 1.0 @ 20 V 1.5 @ 15 V 1.0 0.6 200 @ 35.0 V 200 @ 25.0 V 15 15 N N 1 1 848 b ALLIED Case 318-08 N TO-236AB (SOT-23) MMBV3401LT1 35 General-Purpose Signal and Switching Diodes N Dual Case 318-08 N TO-236AB (SOT-23) The following is a listing of small-signal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications. IR V(BR)R VF trr Max. (ns) Mfr.Os Type Marking @ IBR (A) Min. (V) Max. (A) @ VR (V) Min. (V) Max. (V) @ IF (mA) CT1 Max. (pF) MMBD7000LT1 MMBD6100LT1 BAV70LT1 BAV99LT1 BAW56LT1 M5C 5BM A4 A7 A1 100.0 0.1 70.0 70.0 70.0 100 70 100 100 100 0.300 0.100 5.000 2.500 2.500 50.0 50 70.0 70.0 70.0 0.75 0.85 0.75 N N 1.10 1.10 1.00 1.00 1.00 100 100 50 50 50 1.5 2.5 1.5 1.5 2.0 4 4 6 4 6 11 9 9 11 12 10 2.0 3000 8 Case Style Low-Leakage Medium Speed Switching Diodes N Single Case 318-08 N TO-236AB (SOT-23) BAS116LT1 JV 75.0 100 0.005 75.0 N 1.00 Need Larger Quantity Prices? Call 1-800-433-5700 For Prompt Handling