Cap Ratio Q V
R(BR)R
Device
C3/C30 3.0 V, 50 MHz Style
(V) Marking
Min. Min.
TMOS V (Continued)
TMOS V ÑTO-220AB
V
(BR)DSS
R
DS(on)
I
D
P
D
1
Mfr.Õs I
D
(V) (½) @ (Cont.) (W)
Type
4
(A)
Min. Max. (A) Max.
MTP3055V 60 0.1500 6.00 12.0 40.00
MTP15N06V 60 0.1200 7.50 15.0 53.00
MTP36N06V 60 0.0400 16.00 32.0 88.00
MTP50N06V 60 0.0280 22.50 42.0 107.00
SO-8
MMDF3N04HDR2 40 0.0800 3.40 3.4 2.00
MMDF6N02HDR2 20 0.0350 6.00 6.5 2.00
MMSF10N02ZR2 20 0.0150 10.00 10.0 2.50
Power TMOS
¨
MOSFETs and Diodes
Power TMOS¨MOSFETs (Continued)
TO-247 Isolated Mounting Hole
TO-247 Ñ N-Channel
V
(BR)DSS
R
DS(on)
I
D
P
D
1
Mfr.Õs I
D
(V) (½) @ (Cont.) (W)
Type
4
(A)
Min. Max. (A) Max.
MTW10N100E 1000 1.3000 5.00 10.0 250.00
MTW7N80E 800 1.0000 3.50 7.0 180.00
MTW8N60E 600 0.5000 4.00 8.0 180.00
MTW14N50E 500 0.3200 7.00 14.0 180.00
MTW20N50E 500 0.2400 10.00 20.0 250.00
MTW16N40E 400 0.3000 8.00 16.0 180.00
MTW24N40E 400 0.1600 12.00 24.0 250.00
MTW32N25E 250 0.1000 16.00 32.0 250.00
MTW32N20E 200 0.0750 16.00 32.0 180.00
TMOS V
TMOS V Ñ DPAK
MTD3055V 60 0.1500 6.00 12.0 1.75
3
848
b
ALLIED Need Larger Quantity Prices? Call 1-800-433-5700 For Prompt Handling
Cap. Ratio Q
V
R(BR)R
C4/C30 4.0 V, 50 MHz
(V) Min. Typ.
MV209 26.0 32.0 3.0 5.0 6.5 3/25 200 Ñ 30 Ñ 1
Hyper-Abrupt Tuning Diodes For Telecommunications Ñ Single; Case 318-07 Ñ TO-236AB (SOT-23)
MMBV105GLT1 1.8 2.8 25.0 4.0 6.0 3/25 200 Ñ 30 M4E 8
MMBV109LT1 26.0 32.0 3.0 5.0 6.5 3/25 200 Ñ 30 M4A 8
Diodes
Tuning Diodes
Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts, General Purpose;
Case 182 Ñ TO-226AC (TO-92) Ñ 2-Lead
These devices exhibit high Q characteristics.
C
T
@ V
R
=4.0 V,1.0 MHz
(pF)
Min.
(pF)
Nominal
(pF)
Max.
MV2109 29.7 33.0 36.3 30 2.5 200
Mfr.Õs
Type
MV104 37 42 3.0 2.5 100 32 Ñ 15
2
Each Diode.
Abrupt Tuning Diodes for FM Radio Ñ Dual; Case 29-04 Ñ TO-226AA (TO-92)
C
T
@ V
R
2
(pF)
Min.
(pF)
Max. (V)
Mfr.Õs
Type
Hyper-Abrupt Tuning Diodes for Communications Ñ Dual; Case 318-07 Ñ TO-236AB (SOT-23)
MMBV609LT1 26.0 32.0 3.0 1.8 2.4 3/8 250 Ñ 20 5L 9
Hot-Carrier Diodes (Continued)
Case 318-08 Ñ TO-236AB (SOT-23)
C
T
@V
R
V
F
@ 10 mA I
R
@ V
R
Minority
Mfr.Õs V
(BR)R
Device
(pF) (V) (nA) Lifetime Style
Type (V) Marking
Max. Max. Max. (ps) Typ.
MMBD701LT1 70.0 1.0 @ 20 V 1.0 200 @ 35.0 V 15 5H 8
MMBD301LT1 30.0 1.5 @ 15 V 0.6 200 @ 25.0 V 15 4T 8
MMBD101LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V Ñ 4M 8
Hot-Carrier Diodes
Case 182 Ñ TO-226AC (TO-92)
The following is a listing of hot carrier (Schottky) diodes that exhibit low forward voltage drop for improved circuit efficiency.
C
T
@V
R
V
F
@ 10 mA I
R
@ V
R
Minority
Mfr.Õs V
(BR)R
Device
(pF) (V) (nA) Lifetime Style
Type (V) Marking
Max. Max. Max. (ps) Typ.
MBD701 70.0 1.0 @ 20 V 1.0 200 @ 35.0 V 15 Ñ 1
MBD301 30.0 1.5 @ 15 V 0.6 200 @ 25.0 V 15 Ñ 1
C
T
@ V
R
(f=1.0 MHz) Cap. Ratio @ V
R
(pF)
Min.
(pF)
Max. (V) Min. Max. (V)
Q
3.0 V
Min.
50 MHz
Max.
Hyper-Abrupt Tuning Diodes For Telecommunications Ñ Single; Case 182 Ñ TO-226AC (TO-92)
Mfr.Õs
Type
V
(BR)R
Device Case
(V) Marking Style
C
T
1
t
rr
Case
Max. Max. Style
(pF) (ns)
PIN Switching Diodes
Case 182 Ñ TO-226AC (TO-92)
The following PIN diodes are designed for VHF band switching and general-purpose low current switching applications.
MPN3404 20 2.0 15 0.1 @ 25 V 0.85 @ 10 mA Ñ 1
Case 318-08 Ñ TO-236AB (SOT-23)
MMBV3401LT1 35 1.0 20 0.1 @ 25 V 0.70 @ 10 mA 4D 8
V
(BR)R
Mfr.Õs (V)
Type Min.
Series
IR @ V
R
Resistance Device
(nA) Style
(½) Marking
Max. Max.
C
T
@ V
R
@ 1.0 MHz
(pF)
Max. (V)
General-Purpose Signal and Switching Diodes Ñ Dual
Case 318-08 Ñ TO-236AB (SOT-23)
The following is a listing of small-signal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V
(BR)R
Min.
(V)
@ I
BR
(µA)
I
R
Max.
(µA)
@ V
R
(V)
V
F
Min.
(V)
Max.
(V)
@ I
F
(mA)
MMBD7000LT1 M5C 100.0 100 0.300 50.0 0.75 1.10 100 1.5 4 11
MMBD6100LT1 5BM 0.1 70 0.100 50 0.85 1.10 100 2.5 4 9
BAV70LT1 A4 70.0 100 5.000 70.0 0.75 1.00 50 1.5 6 9
BAV99LT1 A7 70.0 100 2.500 70.0 Ñ 1.00 50 1.5 4 11
BAW56LT1 A1 70.0 100 2.500 70.0 Ñ 1.00 50 2.0 6 12
Low-Leakage Medium Speed Switching Diodes Ñ Single
Case 318-08 Ñ TO-236AB (SOT-23)
BAS116LT1 JV 75.0 100 0.005 75.0 Ñ 1.00 10 2.0 3000 8
Mfr.Õs Marking
Type
1
TC=25¡C.
2
Indicates Logic Level.
3
Power rating when mounted on an FR-4 glass epoxy printed circuit board with the minimum recommended footprint.
ON
Semiconductor
13
