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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 1998, 1999
MOS FIELD EFFECT TRANSISTOR
µ
µµ
µ
PA1914
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D13810EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The
µ
PA1914 is a switching device which can be driven
directly by a 4 V power source.
The
µ
PA1914 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
•Can be driven by a 4 V power source
•Low on-state resistance
RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A)
ORDERING INFORMATION
PART NUMBER PACKAGE
µ
PA1914TE 6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS –30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±4.5 A
Drain Current (pulse) Note1 ID(pulse) ±18 A
Total Power Dissipation PT1 0.2 W
Total Power Dissipation Note 2 PT2 2W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
123
654
1.9
2.9 ±0.2
0.32
+0.1
–0.05
0.95
0.65
+0.1
–0.15
1
, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: TF
Gate
Drain
Data Sheet D13810EJ1V0DS00
2
µ
µµ
µ
PA1914
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Volt age Drai n Current IDSS VDS = –30 V, VGS = 0 V –10
µ
A
Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 –2.5 V
Forward Transfer Adm i ttance | yfs |V
DS = –10 V, ID = –2.5 A17.1S
Drain to Sourc e On-state Resist ance RDS(on)1 VGS = –10 V, ID = –2.5 A4357m
Ω
RDS(on)2 VGS = –4.5 V, ID = –2.5 A5886m
Ω
RDS(on)3 VGS = –4.0 V, ID = –2.5 A6496m
Ω
Input Capaci tance Ciss VDS = –10 V 589 pF
Output Capaci tance Coss VGS = 0 V 210 pF
Reverse Transf er Capac i tance Crss f = 1 MHz 86 pF
Input Capaci tance Ciss VDS = –25 V 546 pF
Output Capaci tance Coss VGS = 0 V 148 pF
Reverse Transf er Capac i tance Crss f = 1 MHz 65 pF
Turn-on Delay Time td(on) VDD = –15 V16ns
Rise Time trID = –2.5 A57ns
Turn-off Del ay T ime td(off) VGS(on) = –10 V63ns
Fall Time tfRG = 10 Ω80 ns
Total Gate Charge QGVDD= –24 V11nC
Gate to Source Charge QGS ID = –4.5 A1.5nC
Gate to Drain Charge QGD VGS = –10 V 2.8 nC
Diode Forward Voltage VF(S-D) IF = 4.5 A, VGS = 0 V0.88V
Reverse Recovery Time trr IF = 4.5 A, V GS = 0 V 22 ns
Reverse Recovery Charge Qrr di/dt = 100 A /
µ
s11nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
µ
Duty Cycle ≤ 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 % 90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10 Ω
I
D
0
t
on
t
off
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13810EJ1V0DS00 3
µ
µµ
µ
PA1914
TYPICAL CHARACTERISTICS (TA = 25°C)
30 150
60 90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−10 −100
I
D
- Drain Current - A
−1
V
DS
- Drain to Source Voltage - V
−100
−10
−1
−0.1
−0.1
−0.01
PW
=
100 ms
PW
=
5 s
PW
=
10
ms
PW
=
1
ms
R
DS(on)
Limited
(@V
GS
=
−
10 V)
I
D
(pulse)
I
D
(
DC
)
Single Pulse
Mounted on 250mm x 35µm Copper Pad
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
−0.20.0 −0.8 −1.0
−0.4 −0.6
−4
0
−12
−16
−8
−20
V
GS
= −20 V
V
GS
= −10 V
V
GS
= −4.5 V
V
GS
= −4.0 V
−0.01
−0.001
−0.0001
−0.00001
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −3.5 −4.0
−100
−10
−1
−0.1
T
A
= 25˚C
T
A
= 75˚C
T
A
= 125˚C
V
GS
- Gate to Sorce Voltage - V
T
A
=
−
25˚C
V
DS
=
−10 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = −10 V
ID = − 1 mA
−50 50 1000 150
−2.0
−1.5
−1.0
−1−10 −100−0.1
V
DS
= −10V
T
A
= −25 ˚C
T
A
= 25 ˚C
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
1
10
0.1
0.01
−0.01
100
T
A
= 75 ˚C
T
A
= 125 ˚C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
Data Sheet D13810EJ1V0DS00
4
µ
µµ
µ
PA1914
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
−1
−0.1−0.01 −10 −100
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - mΩ
40
TA = 125˚C
TA = 75˚C
TA = −25˚C
TA = 25˚C
60
100
80
120 V
GS
= −4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
−1
−0.1−0.01 −10 −100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
40
T
A
= 125˚C
T
A
= 75˚C
T
A
=
−
25˚C
T
A
= 25˚C
60
80
100 V
GS
= −4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
−1
−0.1−0.01 −10 −100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
30
T
A
= 125˚C
T
A
= 75˚C
T
A
=
−
25˚C
T
A
= 25˚C
40
60
50
70 V
GS
= −10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -˚C
I
D
= −2.5 A
−50 0 50 100 150
20
60
40
100
80
R
DS (on)
- Drain to Source On-state Resistance - mΩ
V
GS
= −10 V
V
GS
= −4.0 V
V
GS
= −4.5 V
0
20
60
40
80
100
−
4
−
8
−
16
−
20
−
12
R
DS (on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
I
D
=
−
2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10
−0.1
100
1000
10000
−1−10 −100
f = 1
MHz
V
GS
= 0V
C
iss
C
rss
C
oss
Data Sheet D13810EJ1V0DS00 5
µ
µµ
µ
PA1914
−0.1 −1−10
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
100
1000
10
1
td
(off)
td
(on)
tf
tr
SWITCHING CHARACTERISTICS
V
DD
= −15V
V
GS
(
on
) = −10V
R
G
= 10Ω
0.01
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Source to Drain Current - A
VF(S-D) - Source to Drain Voltage - V
Qg - Gate Charge - nC
084621012
DYNAMIC INPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
0
4
2
6
8
10
12
VDD
= −24 V
−15 V
−6 V
ID = −4.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
10
0.1
1
100
1000
10.001 0.01 0.1 10 100 1000
Mounted on 250mm x 35 µm
Copper Pad
Connected to Drain Electrode
in 50mm x 50mm x 1.6mm
FR-4 Board Single Pulse
2
Without Board
Data Sheet D13810EJ1V0DS00
6
µ
µµ
µ
PA1914
[MEMO]
Data Sheet D13810EJ1V0DS00 7
µ
µµ
µ
PA1914
[MEMO]
µ
µµ
µ
PA1914
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
