OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLER XY 83 t 15 MAX O MAX B40 03 pili C =e ago | b a8 r . REF DIMENSIONS IN mm PACKAGE CODE K ANODE(1] 6|BASE | ie 3 jena. 2079 ST1603A Equivalent Circuit Storage temperature............... 58C to 150C Operating temperature ............. 55C to 100C Lead soldering temperature (10 sec).......... 260C INPUT DIODE Forward current............ 00.000. cc cea ee 60 mA Reverse voltage. .....0 02... cece eee e eee eee 3.0V Peak forward current (1 ws pulse, 800 pps) .... 0... eee 3.0A MCT2E The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. B Utility/economy isolator 8 AC line/digital logic isolator Digital logic/digital logic isolator Telephone/telegraph line receiver m@ Twisted pair line receiver High frequency power supply feedback control m Relay contact monitor m@ Power supply monitor w UL recognized File E90700 Power dissipation at 25C ambient.......... 200 mW Derate linearly from 25C. ............... 2.6 mW/C OUTPUT TRANSISTOR Power dissipation at 25C ambient.......... 200 mw Derate linearly from 25C................ 2.6 mW/C Total package power dissipation at 25C ambient (LED plus detector)...........0.000..0.. 250 mW Derate linearly from 25C................ 3.3 mW/C Collector-Emitter Current (Ice)... eae 50 mA PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS ae SYMBOL TYP. MAX. UNITS " TEST CONDITIONS INPUT DIODE Forward voltage Ve 1.25 1.50 Vv |-=20 mA Reverse voltage Ve 3.0 25 Vv lp=10 pA Junction capacitance Cc, 50 pF V,=0V, F=1 MHz Reverse leakage current le .01 10 pA Va=3.0V OUTPUT TRANSISTOR DC forward current gain Der 100 250 Voe=5 V, le=100 pA Collector to emitter breakdown volt. BVcco 30 85 v [.=1.0 mA, |-=0 Collector to base breakdown voltage BVcao 70 165 Vv [,=10 pA, |-=0 Emitter to collector breakdown voltage BVico 7 14 Vv |:=100 yA, |-=0 Collector to emitter, leakage current loco 5 50 nA Voe=10 V, |-=0 Collector to base leakage current logo 0.1 20 nA Vea=10 V, |-=0 Capacitance collector to emitter Coro 8 pF Voe=O Capacitance collector to base Coso 20 pF Vos=10 V Capacitance emitter to base Ceso 10 pF Vag =O eRe aRRT aS ana R aR _TRANSFERCHARACTERISTICS DC CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS DC collector current transfer ratio CT Ree 20 60 % ce=10 V, |-=10 mA, Note 1 DC base current transfer ratio CTRes 35 % Vop=10 V, -=10 MA Collector-emitter, saturation voltage Vee (sat) 0.24 0.4 Vv Ip=2.0 MA, =16 mA CHARACTERISTICS SYMBOL MIN. . . TEST CONDITIONS SWITCHING TIMES Non-saturated collector Delay time . R,=100 2, le=2 MA, Vec=10V Rise time . Fig. 10 Storage time Falt time Saturated collector Delay time . R,=1 KO, |-=2 MA, Vec=10 V Rise time Storage time Fall time PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS TEST CONDITIONS SWITCHING TIMES (Cont'd) Saturated ton (from 5 V to 0.8 V) t.. (SAT) 5 BS Ri=2 KQ, l-=15 MA, Veco=5 V t off (from SAT to 2.0 V) tor (SAT) 26 Rs=open Saturated ton (from 5 V to 0.8 V) ton (SAT) 5 BS R, =2 KQ, |-=20 mA, Voc=5 V t off (from SAT to 2.0 V) tor (SAT) 18 Ry=100 KO, Non-saturated Base Rise time t, 175 ns L=1 KO, Voe=10V Fall time if 175 ns Bandwidth (see note 2) Bw 150 KHz (;=2 MA, Voe=10 V, R.=1000 CHARACTERISTICS SYMBOL MIN. . . UNITS TEST CONDITIONS Steady state isolation voltage Vico 7500 VAC-PEAK = |o < 1 pA, 1 minute 5300 VAC-rms lo 1 pA, 1 minute Isolation resistance Vic=500 V Isolation capacitance - F=1 MHz e ~~ 1.25 + a - < Vee = 0.3V = aA i= Voce = 5.0V 1.0 - & Bi 0 a 3 I | o7s{- < a a 5 > 1.0 | a a T= +100 7 1 w 0-50 ir \ N J o9 wo) 2 ie en i. Z 0.25 : 2 3 0.8 ! 1 ! ! Zz 0102 05 1 2 5 10 20 50 100 0 i FORWARD CURRENT Ir (mA) 0 5 10 15 20 C1686 lp (mA) C1679 Fig. 1. Forward Voliage vs. Current Fig. 2. Normalized CTR vs. Forward Current OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLER 1.2 T T T T Ip = 10mMA Voce = 0.3V |< lp = 5mA Voce = 5.0V 48 Ip = 20mA, Fle .o}+} ees OlF NY ~? Ls FS 3 oY SS < Go 98 7 7 a / / 2 N io, a =z O6 f = Y a 8 2 0.4 -78 -50 -25 0 +25 +50 +75 +100+125 012 345 67 8910 11 Ta (C) C1680 \e -imA) 1243 Fig. 3. Normalized CTR vs. Fig. 4. Collector Current vs. Temperature Forward Current 1.0 1.00 % 0.90 z 0.90 a wl oa Vv = @ 2 0.80 | & 0.80 <f Ele Voce = | @ ole 070 O| 0.70 IF = 20MA 2 0.60 Ir = 20mA ~2 o60 Ie = toma oad Ip = 10mMA F=om 5 0.50 Ip = 5mA 5 0.60 a 0.40 a 0.40 Zz 0.30 N 0.30 z 0.20 $ 0.20 x 5 Z 0.10 9 0.10 9 0 10K 100K 1M 10K 100K 1M Rae BASE RESISTANCE (9) Rae BASE RESISTANCE () C1681 C1682 Fig. 5. CTR vs. RBE (Unsaturated) Fig. 6. CTR vs. RBE (Saturated) 1.2 1.2 T oa 311 id ul 2 f a: vr yl e| 2 | es A AN =| 2 / 515 1.0 h obs Tis i ae 11 | L y 5 09 [ < \ 2 / a \ a Ww uw | N N N08 1 a 1.0 z yj Vec = 10V < . z / lo = 2mA Vec = 10V 5 0.7 Ru =1000 TH Ic = 2mA z (See Fig. 10) z Ri = 1000. oot Ld tL 0s See Fig. 10) 10K 100K 1M 9 10K 100K 1M 00 Rae BASE RESISTANCE (0) Ree BASE RESISTANCE i} C1683 C1684 Fig. 7. Normalized Tor vs. RBE Fig. 8. Normalized Toy vs. RBE 1-132 OPTDELECTRONICS PHOTOTRANSISTOR OPTOCOUPLER Vee = 10V 1.2 ' Ww Voce = 10V = Ru = 1000 PULSE WIDTH = 100 ps - iSee Fig. 10) Ri DUTY CYCLE = 10% Q 1<10 INPUT aa E Rau OUTPUT eu = | o8 N a 3 Me OUTPUT Nog a 8 =~ 06; a 6 Zz 0 5 10 18 20 = | ton Pe tor Ig (mA) C1685 C12964 1294 Fig. 9. Switching Time vs. IC Fig. 11. Switching Time Waveforms Fig. 10. Switching Time Test Circuit MODULATION 4 os CONSTANT h INPUT CURRENT _ INPUT OUTPUT AL = 1001: = az? Modulation Circuit Used to Obtain Output vs. Frequency Plot 1. The current transfer ratio (I,/I.) is the ratio of the detector collector current to the LED input current with Vc. at 10 volts. 2. The frequency at which i, is 3 dB down from the 1 kHz value. 3. Rise time (t,) is the time required for the collector current to increase from 10% of its final value, to 90%. Fail time (t) is the time required for the collector current to decrease from 90% of its initial value, to 10%.