PROFET(R) BTS 432 E2 Smart Highside Power Switch Product Summary VLoad dump 80 Vbb-VOUT Avalanche Clamp 58 Vbb (operation) 4.5 ... 42 Vbb (reverse) -32 RON 38 IL(SCp) 44 IL(SCr) 35 IL(ISO) 11 Features * Load dump and reverse battery protection1) * Clamp of negative voltage at output * Short-circuit protection * Current limitation * Thermal shutdown * Diagnostic feedback * Open load detection in ON-state * CMOS compatible input * Electrostatic discharge (ESD) protection * Loss of ground and loss of Vbb protection2) * Overvoltage protection * Undervoltage and overvoltage shutdown with autorestart and hysteresis * Green Product (RoHS compliant) * AEC qualified PG-TO220-5-11 V V V V m A A A PG-TO263-5-2 5 1 Standard 5 SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. R bb Voltage Overvoltage Current Gate source protection limit protection + V bb 3 V Logic 2 Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Voltage Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) 2) Load GND No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Data Sheet 1 of 14 2010-Jan-26 PROFET(R) BTS 432 E2 Pin Symbol Function 1 GND Logic ground 2 IN Input, activates the power switch in case of logical high signal 3 Vbb Positive power supply voltage, the tab is shorted to this pin 4 ST Diagnostic feedback, low on failure 5 OUT (Load, L) Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb Vs3) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 125 A C 1.7 2.0 J kV -0.5 ... +6 5.0 5.0 V mA 1 75 typ. 33 K/W EAS VESD VIN IIN IST 63 66.5 Unit V V W see internal circuit diagrams page 6... Thermal resistance 3) 4) chip - case: junction - ambient (free air): SMD version, device on pcb4): RthJC RthJA VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 2 2010-Jan-26 PROFET(R) BTS 432 E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 C: RON -- 30 38 m IL(ISO) 9 55 11 70 -- A IL(GNDhigh) -- -- 1 mA ton toff 50 10 160 -- 300 80 s dV /dton 0.4 -- 2.5 V/s -dV/dtoff 1 -- 5 V/s Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 4.5 2.4 --- ---6.5 42 4.5 4.5 7.5 V V V V Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) --0.2 -67 12 18 6 52 ---- V V V V 25 60 -- A IL(off) 42 42 -60 63 ---- IGND -- 1.1 -- mA Tj=150 C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 5) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 6 ) Overvoltage protection Tj =-40C: Tj =25...+150C: Ibb=40 mA Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)7), VIN=5 V 5) 6) 7) Ibb(off) A At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Data Sheet 3 2010-Jan-26 PROFET(R) BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions8) Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 400 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) Values min typ max --24 -44 -- 74 --- A 22 35 -- A 80 -- 400 s VON(CL) -- 58 -- V VON(SC) Tjt Tjt EAS ELoad12 ELoad24 -150 --- 8.3 -10 -- ---1.7 1.3 1.0 V C K J --- -120 32 -- V 2 2 --- 900 750 mA min value valid only, if input "low" time exceeds 30 s Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation10), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 11) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) 8) 9) Unit -Vbb Rbb Tj=-40 C: IL (OL) Tj=25..150C: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Short circuit current limit for max. duration of 400 s, prior to shutdown (see td(SC) page 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8. VON(CL) - Vbb 11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 10) Data Sheet 4 2010-Jan-26 PROFET(R) BTS 432 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V -1 0.5 -- -30 V A 10 25 50 A 80 200 400 s td(ST) 350 -- 1600 s VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V at Tj = 25 C, Vbb = 12 V unless otherwise specified Input and Status Feedback12) Input turn-on threshold voltage Unit Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2) VIN(T) VIN = 0.4 V: IIN(off) On state input current (pin 2) VIN = 3.5 V: IIN(on) Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: 12) td(ST SC) If a ground resistor RGND is used, add the voltage drop across this resistor. Data Sheet 5 2010-Jan-26 PROFET(R) BTS 432 E2 Truth Table Input- Output Status Level level 432E2 Normal operation Open load L H L H L H H H H L Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L H L H L H L H L H 13) H L L H H L L L L L L H L H H (L14) L L H H H H L = "Low" Level H = "High" Level Terms Input circuit (ESD protection) Ibb I IN 2 V 13) 14) IN VST bb IN Vbb IN IL PROFET I ST V R 3 4 OUT I ESDZDI1 ZDI2 VON 5 I I GND ST GND 1 R IGND ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current VOUT GND Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection Data Sheet 6 2010-Jan-26 PROFET(R) BTS 432 E2 Status output Overvolt. and reverse batt. protection +5V R ST(ON) GND + V bb V ST R IN R bb Z IN Logic ESDZD V R ST ST PROFET GND ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not designed for continuous current OUT R GND Signal GND Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high Open-load detection + V bb ON-state diagnostic condition: VON < RON * IL(OL); IN high V ON + V bb OUT Logic unit Short circuit detection VON ON OUT Open load detection Logic unit Inductive and overvoltage output clamp + V bb V Z V ON GND disconnect OUT GND 3 VON clamped to 58 V typ. 2 IN Vbb PROFET 4 V bb V IN V ST OUT 5 ST GND 1 V GND Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Data Sheet 7 2010-Jan-26 PROFET(R) BTS 432 E2 GND disconnect with GND pull up 3 3 2 IN Vbb high 2 PROFET 4 OUT IN PROFET 5 ST 4 GND V bb V IN ST OUT 5 ST GND 1 1 V Vbb V V GND bb Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Inductive Load switch-off energy dissipation Vbb disconnect with charged inductive load E bb E AS 3 high 2 IN Vbb IN PROFET 4 OUT 5 PROFET ST = GND V ST GND 1 ELoad Vbb OUT EL ER bb Energy dissipated in PROFET EAS = Ebb + EL - ER. 2 ELoad < EL, EL = 1/2 * L * I L Data Sheet 8 2010-Jan-26 PROFET(R) BTS 432 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432E2 Overtemperature protection Tj >150 C, latch function15)16) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.15) (when first turned on after approx. 200 s) E X X Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X Undervoltage shutdown with auto restart X Overvoltage shutdown with auto restart X Status feedback for overtemperature short circuit to GND short to Vbb X X -17) open load X undervoltage - overvoltage - Status output type CMOS Open drain X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X Load current limit high level (can handle loads with high inrush currents) X medium level low level (better protection of application) 15) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 17) Low resistance short V to output may be detected by no-load-detection bb Data Sheet 9 2010-Jan-26 PROFET(R) BTS 432 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN V bb IN t d(bb IN) td(ST) ST *) V V OUT OUT A I ST open drain L IL(OL) t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s Figure 2a: Switching a lamp, *) if the time constant of load is too large, open-load-status may occur Figure 3a: Turn on into short circuit, IN IN ST ST V V OUT OUT td(SC) I I L L t t td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ. Data Sheet 10 2010-Jan-26 PROFET(R) BTS 432 E2 Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 3b: Turn on into overload, IN IN IL ST I L(SCp) IL(SCr) V OUT T ST J t t Heating up may require several milliseconds , Vbb - VOUT < 8.3 V typ. Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3c: Short circuit while on: IN IN ST ST V V OUT IL t d(ST) OUT I **) L open t t **) current peak approx. 20 s Data Sheet 11 2010-Jan-26 PROFET(R) BTS 432 E2 Figure 6b: Undervoltage restart of charge pump Figure 5b: Open load: detection in ON-state, open load occurs in on-state VON [V] VON(CL) V on IN off td(ST OL1) t d(OL ST2) ST V V OUT off V V bb(u rst) I normal open L normal V V bb(o rst) bb(u cp) bb(under) t bb(over) on V bb Vbb [V] td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN V bb Vbb V bb(under) V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) V bb(u rst) V OUT V OUT ST open drain ST t Data Sheet t 12 2010-Jan-26 PROFET(R) BTS 432 E2 Package and Ordering Code All dimensions in mm PG-TO220-5-11 SMD PG-TO263-5-2 BTS 432 E2 BTS432E2 E3062A 4.4 10 0.2 3.7 0.3 5 x 0.8 0.1 1) 3.9 0.4 M A C B 0.05 2.4 0.1 4.7 0.5 9.25 0.2 9.25 0.2 0...0.15 0.25 A 8.5 1) 0...0.15 C 0.5 0.1 4 x 1.7 (15) 2.8 0.2 8.6 0.3 0.05 2.4 1.6 0.3 1 0.3 1.27 0.1 10.2 0.3 1) 12.95 17 0.3 15.65 0.3 0...0.3 1.27 0.1 0...0.3 4.4 1.3 0.3 8.5 1) 3.7 -0.15 2.7 0.3 A 7.55 1) 10 0.2 9.9 0.2 5 x 0.8 0.1 0.5 0.1 4 x 1.7 8.4 0.4 0.25 M A B 8 MAX. 0.1 B Typical All metal surfaces tin plated, except area of cut. 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. GPT09062 Green Product To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Revision History Version Date Changes Rev. 1.1 Rev. 1.0 2010-01-26 2009-11-12 Page 13: Package drawing for PG-TO220-5-11 corrected. RoHS-compliant version of BTS432E2 Removal of straight lead package variant E3043 Page 1, page 13: RoHS compliance statement and Green product feature added Page 1, page 13: Change to RoHS compliant packages; PG-TO220-5-11 for standard (staggered) variant; PG-TO263-5-2 for E3062A variant. Page 2: Thermal resistance junction to ambient for SMD version set to typically 33K/W. Page 2: Pin marking removed. Page 6, 9: Discontinued variants removed from truth table & options overview. Legal disclaimer updated Data Sheet 13 2010-Jan-26 PROFET(R) BTS 432 E2 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 2010-Jan-26