Feb.1999
BCR3KM OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Control of heater such as electric rice cooker, electric pot
● IT (RMS) .................................................................. 3A
● VDRM ......................................................400V / 600V
● IFGT !, IRGT ! , IRGT #................... 15mA (10mA) ✽2
● UL Recognized : File No. E80271
✽1. Gate open.
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg—
Viso
Symbol A
A
A2s
W
W
V
A
°C
°C
g
V
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol 8
400
500 V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VDRM
VDSM
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class Unit
Ratings Unit
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
➁
➀➂
Measurement point of
case temperature
✽
➀
➁
➂
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
12
600
720