©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
4A, 1200V Ultrafast Diodes
The RURD4120S9A_F085 are ultrafast diodes with
soft recovery characteristics (t
rr
< 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49036.
Symbol
Features
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . <70ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RURD4120S9A_F0859A_F085 TO-252 UR4120
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD4120S9A_F085 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 152
o
C)
4A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
8A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
40 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50 W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet March 2009
• Qualified to ACE Q101
• RoHS Compliant
©2009 Fairchild Semiconductor Corporation 2 RURD4120S9A_F085 Rev. A
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
F
= 4A - - 2.1 V
I
F
= 4A, T
C
= 150
o
C - - 1.9 V
I
R
V
R
= 1200V - - 100
µ
A
V
R
= 1200V, T
C
= 150
o
C - - 500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s--70ns
I
F
= 4A, dI
F
/dt = 200A/
µ
s--90ns
t
a
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 40 - ns
t
b
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 28 - ns
Q
RR
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 335 - nC
C
J
V
R
= 10V, I
F
= 0A - 15 - pF
R
θ
JC
--3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery time.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
20
0.5
10
0 0.5 1 1.5 2 2.5 3
25oC
175oC
100oC
VR, REVERSE VOLTAGE (V)
0 400 800 1200600 1000
100
0.01
0.1
1
10
IR, REVERSE CURRENT (µA)
200
0.001
25oC
100oC
175oC
RURD4120S9A_F085
©2009 Fairchild Semiconductor Corporation 3 RURD4120S9A_F085 Rev. A
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
0.5
0
45
30
15
75
41
trr
60
t, RECOVERY TIMES (ns)
tb
ta
TC = 25oC, dIF/dt = 200A/µs
0.5
0
60
100
41
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
tb
80
20
trr
ta
40
TC = 100oC, dIF/dt = 200A/µs
0.5
0
25
125
41
trr
tb
100
ta
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
50
75
TC = 175oC, dIF/dt = 200A/µs
5
1
0
125 135 155 175165
2
3
4
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
145
DC
SQ. WAVE
VR, REVERSE VOLTAGE (V)
30
15
00 50 100 150 200
75
CJ, JUNCTION CAPACITANCE (pF)
60
45
RURD4120S9A_F085
©2009 Fairchild Semiconductor Corporation 4 RURD4120S9A_F085 Rev. A
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RURD4120S9A_F085
IL
RURD4120S9A_F085
IL
RURD4120S9A_F085
IL
RURD4120S9A_F085
Rev. I39
TRADEMARKS
The following include s registered and unreg istered trademarks and service marks, owned by Fairchild Semicon ductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademar ks.
* Trademarks of System General Corporat ion, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES W ITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEV ICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant int o the body or (b) support or sustain lif e,
and (c) whose failure to perform when properly used in accorda nce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonabl y expected t o cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™ ®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Informati on Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any ti me without
notice to improve design.
No Identification Neede d Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to impr ove the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is f or reference information only.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiti ng of semiconductor parts is a growing problem in the in dustry. All manufacture s of semiconductor products are experiencing coun terfeiting of their
parts. Customers who in advertently p urchase co unterf eit pa rts experi ence ma ny pro blems such as loss of bra nd r eputat ion, sub standard per formance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers f rom the
proliferation of counterfei t parts. Fairchild strongly encourages customers to pu rchase Fairchild parts either directly from Fairchild or from A uthorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and st orage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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committed to combat this global problem and encourage our custo mers to do their part in stopping this practice by buying direct or from authorized distributors.
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 5 RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
