&) HARRIS HA-2400/883 PRAM Four Channel January 1989 Programmable Operational Amplifier Features This Circuit is Processed In Accordance to Mil-Std- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. @ Digital Programmabillty Description The HA-2400/883 is a four channel programmable amplifi- er providing a level of versatility unsurpassed by any other monolithic operational amptifier. Versatility is achieved by employing four input amplifier channels, any one (or none) of which may be electronically selected and connected to a High Slew Rate (Uncompensated) ....... 20V/us Min single output stage through DTL/TTL compatible address (Compensated) ........... 6V/us Min inputs. The device formed by the output and the selected pair of inputs is an op amp which delivers excellent slew * Wide Gain Bandwidth rate, gain bandwidth and power bandwidth performance. (Uncompensated) ........ 20MHzMin other advantages features for these dielectrically Isolated (Compensated) ........... 4MHz Min amplifiers include high voltage gain and input impedance High Gain .........-..c0e cence ence eeneee 50kV/V Min coupled with tow input offset voltage and offset current. External compensation is not required on this device at @ Low Offset Current .......-.-.....2..000. 50nA Max Single Capacitor Compensation For Unity Gain DTL/TTL Compatible Inputs Applications * Single Selection/Multiplexing Op Amp Gain Stage * Frequency Oscillator Filter Characteristics * Add-Subtract Functions Integrator Characteristics # Comparator Levels closed loop gains greater than 10. Each channel of the HA~2400/883 can be controlled and operated with suitable feedback networks in any of the standard op amp configurations. This specialization makes these amplifiers excellent components for multiplexing, signal selection, and mathematical function designs. With 20V/us slew rate, 20MHz gain bandwidth, and low input bias currents makes these devices ideal building blocks for signal generators, active filters, and data acquisition designs. Programmability coupled with 9mV maximum offset voltage and 50nA offset current makes these amplifiers outstanding components for the signal condition- ing circuits. The HA~2400/883 is available in the 16 pin Dual-in-Line Ceramic package and a 20 pin LCC package. The HA-2400/883 is specified from -559C to +125C. Pinouts HA1-2400/883 (CERAMIC DIP) HA4-2400/883 (CERAMIC LCC) TOP VIEW TOP VIEW 22 +2 &o 2 20H +1na [7 | -a [2 Hs], +IN4 [18] ENABLE -INap St f7] GND +1n4 [3] [14] ENABLE Nc [6! 116) M6] nc -IN4 13] GND IN ca [13] -INt [7 15 COMP COMP - wpowe int [5] 2 2 +ini Tat 114] v+ +1n1 [6] TIPS 2-9 TRUTH TABLE [ta] OUT -in2[7 |= 4 wolfe ont nw Flv. or loolew| SSuESTE L L H 1 L FH JH 2 H}L]H 3 H]H]H 4 X |X YL NONE OP AMPs & COMPARATORSSpecifications HA-2400/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals..........-2.2..-.0005 45V Thermal Resistance 8ja Vic Differential Input Voltage.............+ sees - tVSUPPLY Ceramic DIP Package ................. S1C/W 25C /W Voltage at Either Input Terminal .................00 2000 V+ to V- Ceramic LCC Package ................ B8C/W 28C s/w Digital Input Voltage... ... 0... ec eeee ee eee ee ee ~-0.76V to +10V Internal Power Dissipation Peak Output Current (Short Circuit Protected) ...... Isc <+33mA Package Power Dissipation Limit at +75C for Ty < +175C Junction Temperature (Ty) ..... 6. cece cee eee e eee nee +1759C Ceramic DIP Package ........ 6... cece cence ee eee eee 1.11W Storage Temperature Range ........ -65C to +1509C Ceramic LCC Package . 22... 6. ccc cece cee eee eee 1.14W ESD Rating ........ cc cece cece ce ee eect ete eee ene <2000V Package Power Dissipation Derating Factor Above +759C Lead Temperature (Soldering 10 sec). ............0. 000. +2759C Ceramic DIP Package 11.4mW/2G CAUTION: Absolute maximum ratings are limiting values, applied Ceramic LCC Package 11.4mW/9C individually beyond which the serviceability of the circuit may be impaired. Functional operability under any of these conditions is not necessarily implied. Recommended Operating Conditions Operating Temperature Range ............... -55C to+1250C = Negative Supply Voltage... 0.0... 0.0 ccc cece neve eeaeeees -15V Operating Supply Voltage .......... 0... eee eee eee +15V TABLE 1. D.C. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = +15V, V- = -15V, Rg = 10020, Ry = 500kN, Vo = OV Unless Otherwise Specitied. Digital Inputs: Vi_ = +0.5V, Vi = +2.4V, Limits Apply to Each of the Four Channels, When Addressed. GROUP A LIMITS D.C. PARAMETERS SYMBOL CONDITIONS SUBGROUP | TEMPERATURE MIN MAX | UNITS Offset Voltage Vio Vom =0V 1 +25C -9 9 mV 2,3 +1259, -55C -11 11 mV Input Bias Current +B Vom =0V 1 +25C -200 200 nA +Rg = 100k -Rg = 1002 2,3 +1259C, -559C -400 400 nA -lg Vom =OV 1 +250C -200 200 nA +Rg = 1002 -Rg = 100kN. 2,3 +1250C, -559C -400 400 nA Input Offset Current Te) Vom =0V 1 +250C -50 50 nA +Rg = 100k -Rg = 100k 2,3 +1250C, -55C -100 100 nA Common Mode Range +CMR V+ =+6V 1 +259C 9 - Vv V-= -24V Vout = -9V 2,3 +1259C, -559C 9 - ~CMR V+=+24V 1 +259C - -9 V-= -6V Vout = +9V 2,3 +1250C, -559C - -9 Vv Large Signal Voltage Gain Ay Vout = -10V to +10V 4 +25C 50 ~ kV/V RL = 2kn 5,6 +1259C, -55C 25 - kV/V Common Mode Rejection +CMRR AVom = +5V 1 +259C 80 - dB Ratio +V = +10V -V = -20V 2,3 +1259C, -55C 80 ~ dB Vout = -5V -CMRR | AVonM=-5V 1 +259C 80 - dB +V =+20V ~V=-10V 2,3 +1259C, -55C 80 - dB Vout = +5V Qutput Voltage Swing +Vout | RL =2kn 4 +25C +10 - v 5,6 +1259C, -559C +10 - Vv Vout RL = 2k0 4 +25C - -10 v 5,6 +1250C, -559C - -10 v 3-4 CAUTION: This device is sensitive to electrostatic discharge. Proper I.C. handling procedures should be followed.Specifications HA-2400/883 TABLE 1. D.C. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: V+ = +15V, V- = -15V, Rg = 1009, Rr = 500kN, Vc = OV Unless Otherwise Specified. Digital Inputs: Vii = +0.5V, Vi = +2.4V, Limits Apply to Each of the Four Channels, When Addressed GROUP A LIMITS PARAMETER SYMBOL CONDITIONS SUBGROUP | TEMPERATURE MIN MAX UNITS Output Current +lout | VoutT=+10V 4 +25C +10 - mA -louT Vout = -10V 4 +259C - -10 mA Supply Current +loc VouT = OV 1 +25C - 6 mA 2,3 +12509C, ~559C - 7 mA -loc Vout = OV 1 +259C -6 - mA 2,3 +1259C, -559C -7 - mA Power Supply Rejection +PSAR AVsup = +5V 1 +259C 74 - dB Ratio V+ = +20V, V- = -15V Vt = +10V, V- =-15V 2,3 +1259C, -55C 74 - dB -PSRR | AVgyp = +5V 1 +25C 74 ~ dB V+ = +15V, V- = -20V V+ = +15V, V- = -10V 2,3 +125C, -55C 74 - dB Crosstalk cr Vin = 10V 1 +250C -80 - dB wo Digitat Logic Current he Vy = 0V 1 +25C - 15 mA z < 2,3 +1259C, -559C - 1.5 mA z & a he Vin = 5.0V 1 +25C - 1 pA 2 2,3 +12506, -55C - 1 pA 9 TABLE 2. A.C. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = +15V, V- = -15V, Ry = 2kf,, CLOap = SOpF, Unless Otherwise Specified. Subscript 1 Refers to Ay = +1, Ccomp = 15pF Digital Inputs: Vi_ = +0.5V, Vip] = +2.4V, Limits Apply to Each of the Four Channels, When Addressed. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUP TEMPERATURE | MIN | MAX |] UNITS Slew Rate, +SR4 Vout = 5V to +5V 7 +25C 6 - Vins -SR4 VouT = +5V to -5V 7 +250C 6 - V/ps Rise & Fall Time Tri Vout = 0 to +200mV 7 +259C - 45 ns Tri Vout = 0 to -200mV 7 +259C - 45 ns Overshoot +081 VouT = Oto +200mV 7 +259C - 40 % -OS1 Vout = 0 to -200mv 7 +259C - 40 % CAUTION: This device is sensilive to electrostatic discharge. Proper I.C. handling procedures should be followed. 3-5Specifications HA-2400/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: V+ = +15V, V- = -15V, Unless Otherwise Specified. Subscript 2 Reters to Ay = +10, Ccomp = OpF PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE LIMITS MAX UNITS Unity Gain Bandwidth UGBW Av = +1, CCOmMP = 15pF Rp = 2k, C_ = 50pF 1 +259C 4 MHz Gain Bandwidth GBWP2 Ay = +10, CCOMP = OpF Product Ry = 2k, CL = SOpF 1 +25C 20 MHz Full Power Bandwidth4 FPBW 4 Rx = 2k, Ay = +1V, Vo = +10V, Cy = 50pF, Ccomp = 15pF 1,2 +25C 95 kHz Full Power Bandwidtha FPBW2 | RL=2kN, Ay= +10V, Vo = #10V, CL = 50pF, Ccomp = OpF 1,2 +259C kHz Settling Time TSET1 Ay = +1, Ccomp = 15pF Ri = 2kO, CL = SOpF, VO = 10Vp-p, t0 0.1% FM. Logic Control = +5.0V 1 +259C 25 ys Slew Rateg +SRo Vout = -5V to +5V Re = 2kQ, CL = SOpF, Ay = +10, Ccomp = OpF 1 +259C 20 Vis -SRo2 VOUT = +5V to -5V RL = 2kn, Cy = SOpF, Ay = +10, Ccomp = OpF 1 +259C 20 Vis Output Delay ToeL RL = 2kN, CL = 50pF, CcompP = 15PF, Vin = +5V 1 +259C 250 ns Minimum Closed CLS, Ri = 2kQ, CL = SOpF, Loop Stability Ccomp = 15pF 1 +259C VN CLs R_ = 2kN, CL = 5OpF, 2 L L Ccompe = OpF 1 +259C VN SR. 2n Vpeak 2. FPBW = TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 & 2) interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1*, 2,3, 4, 5,6, 7 Group A Test Requirements 1, 2,3, 4, 5, 6,7 Groups C & D Endpoints 1 * PDA applies to Subgroup 1 only. DESC SMD #5962-87783. The subgroup assignmenis of the parameters in these tables were patterned after NOTES: 1. The parameters listed in this table are controlled via design or process parameters and are not directly tested at final production. These parame- ters are lab characterized upon initial design release, or upon dasign changes. These parameters are guaranteed by characterization based upon data fram multiple production runs which reflect lot to lot and within lot variation. CAUTION: This device is sensitive to electrostatic discharge. Proper I.C. handling procedures should be followed. 3-6HA-2400/883 Test Circuit sai 100 aK OVI am ow a ' wr = fxli's sec me | 100K 2 of 1 rio lo Sa] ove sa | Lor 100 1woK OT pur 2 =) et rete ! 1 4 100 wok OF > i Q = ACQuT : r ! K FOR LOOP STABILITY, on l S ss 4 |_2 1 USE MIN VALUE CAPACITOR os | TO PREVENT OSCILLATION 100 10K oe! lo oa ~ sua 3 3 50K ke oz | r93 Lz, 1 4 i rT ee 500K 5 = mo 7 = cL ww ie 33 o OPEN 2 a 100 100K T 12 1 9 1, OVIN x T SOF * = 200 viow~So-? 3 0 ts ve Lon, 075 + 2 E , - >, 4.0 -07EN $3 Zot OPEN aaK 1 5$4 * Includes Stray Capacitance 20-8 men | All Capacitors = +10% (uF) St 7) DFEN All Resistors = +1% (2) oO @ DUT Pin Numbers Refer to 14 Pin Cerdip Package For Detailed Information, Refer to HA-2400/883 Test Tech Brief Test Waveforms + 5.0V + 5.0V + 5.0V ____ pe _ = + 5.0V INPUT | AV / OUTPUT f - 5.0V SR on - 5.0V -5.0VF | TO - 5.0V +8 - A aT sp= OY AT SLEW RATE WAVEFORMS + 200mV ov INPUT oy - 200mV Ta .+ OS Tr, - OS OVERSHOOT, RISE & FALL TIME WAVEFORMSHA-2400/883 Burn-In Circuits HA-2400/883 CERAMIC DIP }Po O ee . pecooe +418 fo CONTROL D aj 1 {2\- 5} on ENABLE Sepst || Bases on IPL LE fajour rp OUTPUT AMP Ejtee Vv - Dy =o Ry HA-2460/883 CERAMIC LCC foPt, 24111 203 19 2 9 & ' Gal of + z EN 8 2 | ono {17 N.C. it6| Cg = | D; Cy > comp 115} N Pst+int= GG. ove Po Bl oine + Zz > our tl VE rea rs3 cea rasa igitg 448 "20 73! / ___] < aa = Coa Do OV: NOTES: Ry = 100k2/Socket, 5%, 1/4W (Min) C4 = Co = 0.01yF/Socket (Min) or 0.1pF/Row (Min) fo = 100kHz Cg = 0.001 pF/Socket, 10% fy = SOkHz 50% Duty Cycle Dy = Dg = 1N4002 or Equivalent/Board fo = 25kHz let) - (v-) |= 30 3-8HA-2400/883 Schematic Diagram 1 1iN- _g COMP Noe TPUT 1 TO AGOITIONAL INPUT STAGES Die Characteristics DIE DIMENSIONS: DIE ATTACH: 88 x 67 x 19 mils Material: Gold/Silicon Eutectic Alloy (2240 x 1710 x 483ym) Temperature: Ceramic DIP 460C (Max) METALLIZATION: Ceramic LCC 420C (Max) Type: Aluminum WORST CASE CURRENT DENSITY: Thickness: 16kA+ 2kA 0.7 x 105A/cm2 GLASSIVATION: ACTIVE DEVICE COUNT: 251 Type: Nitride Thickness: 7kA + 0.7kA SUBSTRATE POTENTIAL (POWERED UP): Unbiased Metallization Mask Layout HA-2400/883 +IN3 DO -1N3 +iN4 -IN4a ~IN1 +INt -INZ +IN2 v- NOTE: Pin Numbers Correspond to DIP Package Only. OP AMPs & COMPARATORSHA-2400/883 Packagingt 16 PIN CERAMIC DIP 753 785 140 005 MIN jp 170 200 MAK 15 | HI .150. MIN 060 a2s | .080 MAX 180 100 2016 BSC 023 .050* .065 LEAD MATERIAL: Type B LEAD FINISH: Type A PACKAGE MATERIAL: Ceramic, 90% Alumina PACKAGE SEAL: Material: Glass Frit Temperature: 4500C + 10C Method: Furnace Seal 20 PAD CERAMIC LCC .089 PAD MATERIAL: Type C PAD FINISH: Type A FINISH DIMENSION: Type A PACKAGE MATERIAL: Multilayer Ceramic, 90% Alumina PACKAGE SEAL: Material: Gold/Tin (80/20) Temperature: 320C + 10C Method: Furnace Braze & 13 # INCREASE MAX LIMIT BY .003 INCHES MEASURED AT CENTER OF FLAT FOR SOLDER FINISH INTERNAL LEAD WIRE: Material: Aluminum Diameter: 1.25 Mil Bonding Method: Ultrasonic COMPLIANT OUTLINE: 38510 D-2 003 .075 -015 . ae .006 i t 022 } >] i} 1022 f 342, 028 p .358 045 a .050 055 i bp) Bsc 342 358 063 t 077 os | f INTERNAL LEAD WIRE: Material: Aluminum Diameter: 1.25 Mil Bonding Method: Ultrasonic COMPLIANT OUTLINE: 38510 C-2 NOTE: All Dimansions are wi Dimensions are in inches. jax * tf Mil-M-38510 Compliant Materials, Finishas, and Dimensions.@ HARRIS HA-2400 DESIGN INFORMATION PRAM Four Channel Programmable Operational Amplifier The information contained in this section has been developed through characterization by Harris Semiconductor and is tor use as application and design aid only. These characteristics are not 100% tested and no product guarantee is implied. TYPICAL PERFORMANCE CHARACTERISTICS Devices Characterized at: Vg = +15V, Vip = +0.5V, Vip = +2.4V. Values Apply to Each of Four Channels When Addressed. PARAMETERS CONDITIONS TEMP TYP UNITS Offset Voltage Vom = OV +25C 4 mV Bias Current Vom = OV +25C 50 nA Offset Current Vom = 0V +259C 5 nA Input Resistance +25C 30 MQ Large Signal Voltage Gain AL = 2k2, Vo = 20Vp-p +25C 150 KV/V Common Mode Rejection Ratic Vom = 5VDC Full 100 dB Gain Bandwidth Product Ry = 2k, C_ = SOpF, Ccomp = OPF, +2590 40 MHz Ay =+10 Unity Gain Bandwidth Ri = 2k, C. = 50pF, Ccoomp = 15pF, +259C 8 MHz Ay=+1 Output Voltage Swing RL = 2k2 Full #12 v Output Current Vout = +10V +259C 20 mA FPBW, Note 2, Vp = 10V +259C 475 kHz FPBWo Note 2, Vp = 10V +25C 125 kHz Rise Time RL = 2k, CL = 50pF, Ccomp = 15pF, +25C 20 ns Ay=t1 Overshoot RL = 2k, CL = 50pF, Ccomp = 15pF, +25C 25 % Ay=+1 Slew Rate, Ay = +1VV +25C 8 Vius Siew Rates Ay = +10V/V +259C 30 V/us Settling Time; VO = 10Vp-p 00.1% +259C 1.5 us Digital Logic Current VIN = +5.0V Full 5 nA Vin = ov Full 1 mA Output Delay To 10% of Final Value +250C 100 ns Crosstalk Unselected Input to Output, Ving = 10VDC +259C 110 dB Supply Current Not Loaded +25C 48 mA PSRR AVg = +10V Full 90 dB OP AMPs & COMPARATORSHA-2400 DESIGN INFORMATION (continued) The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design aid only. These characteristics are not 100% tested and no product guarantee is implied. Typical Performance Curves unless Otherwise Specified: V+ = +15V, Ta = +25C INPUT BIAS CURRENT AND OFFSET CURRENT AS A FUNCTION OF TEMPERATURE 140 120 100 CURRENT {nA) = a 6 8 8 3S on CURRENT -50 -25 0 426 +500 +76 +100 +125 TEMPERATURE (C) NORMALIZED A.C. PARAMETERS vs. TEMPERATURE 12 oa S oe SLEW RATE NORMALIZED VALUE REFERRED TO +25C e oo -0 -25 0 +25 +60 TEMPERATURE {C) +75 +100 +125 NORMALIZED A.C. PARAMETERS vs. SUPPLY VOLTAGE 1.2 1.0 ag NORMALIZED VALUE REFERRED 0.8 +10 15 SUPPLY VOLTAGE 420 Open Loop Voltage Gain - dB Open Loop Voltage Gain - dB POWER SUPPLY CURRENT DRAIN AS A FUNCTION OF TEMPERATURE pa to VSUPPLY = 220.0V VsupPLy = 15.0V: VsSuPPLy * 21 5 SUPPLY CURRENT (mA) -0 -25 0 TEMPERATURE {C) OPEN LOOP FREQUENCY AND PHASE RESPONSE 425 +600 +750 +100 +125 ALK z+ Scamp = OpF >= = Ccomp = 15eF GAIN ib} 100 1K 10K 100K Frequency - Hz 1M 10M FREQUENCY RESPONSE vs. Ccomp 150F 1K 10K 100K Frequency - Hz 1M 100M OPEN LOOP VOLTAGE GAIN vs. TEMPERATURE on oe a Ly i | | : i - VsuppLy -420.0V 07% 7 7" _ VsuppLy ~ 75.0V 105 VSUPPLY * mrooy + eo 4+ i 8 Z 100 + a < oO I : * i ! | | 35 book fo | i | | . - - t : 90 a0 3S 8 as TEMPERATURE (C}HA-2400 DESIGN INFORMATION (continued) The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design aid only. These characteristics are not 100% tested and no product guarantee is implied. Typical Performance Curves unless Otherwise Specified: V+ = 15V, Ta = +25C OUTPUT VOLTAGE SWING EQUIVALENT INPUT NOISE vs. BANDWIDTH 100