LESHAN RADIO COMPANY, LTD.
G5–1/1
1
ANODE
2
ANODE
3
CATHODE
1
3
2
Monolithic Dual Switching Diode
Common Cathode
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse V oltage V R70 Vdc
Forward Current I F200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P D225 mW
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown V oltage
(I (BR) = 100 µAdc) V (BR) 70 — Vdc
Reverse V oltage Leakage Current I RµAdc
(V R = 25 Vdc, T J = 150°C) — 60
(V R = 70 Vdc) — 2.5
(V R = 70 Vdc, T J = 150°C) — 100
Diode Capacitance C D— 1.5 pF
(V R = 0, f = 1.0 MHz)
Forward V oltage V FmVdc
(I F = 1.0 mAdc) — 715
(I F = 10 mAdc) — 855
(I F = 50 mAdc) — 1000
(I F = 150 mAdc) — 1250
Reverse Recovery Time R L = 100 Ωt rr — 6.0 ns
(I
F
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAV70LT1
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
