SSG42N60 SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 50 AMP 600 VOLTS FAST POWER IGBT DESIGNER'S DATA SHEET Part Number /Ordering Information 1/ SSG42N60 N _ TX Screening 2/: _ = Not Screened TX = TX Level TXV = TXV Level S = Space Level Lead Bend 3/4/_ = Straight UB = Up Bend DB = Down Bend Package: 3/ N = TO-258, Isolated P = TO-259, Isolated S2 = SMD2 MAXIMUM RATINGS Average Diode Current @ TC = 25oC @ TC = 90oC @ TC = 25oC Peak Collector Current Gate Emitter Voltage Operating and Storage Temperature Total Device Dissipation @ TC = 25oC Thermal Resistance, Junction to Case TO-258 (N) * Positive Temperature Coefficient for Ease of Paralleling * High Current Switching for Motor Drives and Inverters * Low Saturation Voltage at High Currents. * Low Switching Losses. * High Short Circuit Capability * MOS Input, Voltage Controlled. * Ultra Fast Free Wheeling Diodes * Hermetic Sealed Construction. * TX, TXV, and S-Level Screening Available. SYMBOL Collector-Emitter Voltage Continuous Collector Current APPLICATION NOTES: * 600V IGBT Technology N, P S2 TO-259 (P) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. VALUE UNITS VCEO 600 Volts IC Amps IO 70 42 40 IC(pk) IIFSM 140 300 Amps VGE E20 Volts TJ, TSTG -65 to +200 PD 200 R JC 0.8 0.7 SMD2 (S2) DATA SHEET #: TG0002A o C W o C/W SSG42N60 SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 5/ SYMBOL MIN TYP MAX UNITS Collector - Emitter Breakdown Voltage (VGE = 0V, IC = 2mA) V(BR)CES 600 - - V Collector - Emitter Saturation Voltage (VGE = 15V, IC = 50A) VCE (SAT) - 2 2.5 V VGE (th) 3 4 5 V ICES - - 150 12 A mA Gate - Emitter Leackage Current (VGE = 30V, VCE = 0V) IGES - - 120 nA Input Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) C iss - 2750 - pF Output Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) C oss - 250 - pF Reverse Transfer Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) C rss - 50 - pF Turn-On Delay Time td(on) - 25 - tr - 30 - td(off) - 500 - tf - 360 - nsec nsec nsec nsec VF - - 1.35 1.55 V tRR - - 35 nsec Gate - Emitter Threshold Voltage (VGE = VCE, IC = 1mA) Zero Gate Voltage Collector Current (VCE = 600V, VGE = 0V) Rise Time Turn-Off Delay Time Fall Time TJ = 25oC TJ = 100oC (VCC = 400V, IC = 50ADC, VGE = 15 / 0V, RG = --, tP = 10sec, Duty Cycle 1% Tj = 150oC) Reverse Diode Forward Voltage Drop (VGE = 0V) IF = 20A IF = 40A Reverse Diode Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A) NOTES: Available Part Numbers: * Pulse Test: Pulse Width = 300us, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. SSG42N60N SSG42N60NDB SSG42N60P SSG42N60PDB SSG42N60S2 SSG42N60NUB SSG42N60PUB 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations Available for N and P (TO-258 and TO-259) Packages Only. o 5/ All Electrical Characteristics @25 C, Unless Otherwise Specified. PIN ASSIGNMENT PACKAGE Collector Emitter Gate TO-258 Pin1 Pin 2 Pin 3 TO-259 Pin 1 Pin 2 Pin 3 SMD2 Pin 1 Pin 2 Pin 3