SOLID STATE DEVICES, INC.
SSG42N60
SERIES
DA TA SHEET #: TG0002A
MAXIMUM RA TINGS SYMBOL UNITSVALUE
IC(pk)
IIFSM
140
300
Peak Collector Current
Collector-Emitter Voltage VCEO 600
Amps
Volts
W
oC/W
50 AMP
600 VOLTS
FAST
POWER IGBT
Thermal Resistance,
Junction to Case Rθθ
θθ
θJC
Total Device Dissipation @ TC = 25oCPD
VGE EE
EE
E20Gate Emitter Voltage Volts
DESIGNER'S DATA SHEET
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SSG42N60 N _ TX
Part Number /Ordering Information 1/
Screening 2/: _ = Not Screened
TX = TX Level
T XV = TXV Level
S = Space Level
Lead Bend 3/4/_= Straight
UB = Up Bend
DB = Down Bend
Package: 3/ N = TO-258, Isolated
P = TO-259, Isolated
S2 = SMD2
APPLICA TION NOTES:
•600V IGBT Technology
• Positive Temperature Coefficient for Ease of
Paralleling
• High Current Switching for Motor Drives and
Inverters
• Low Saturation Voltage at High Currents.
• Low Switching Losses.
• High Short Circuit Capability
• MOS Input, Voltage Controlled.
• Ultra Fast Free Wheeling Diodes
• Hermetic Sealed Construction.
• TX, TXV, and S-Level Screening Available.
oCOperating and Storage T emperatur e TJ, TSTG -65 to +200
200
0.8
0.7
IC
IO
70
42
40
Continuous Collector Current @ TC = 25oC
@ TC = 90oC
A verage Diode Current @ TC = 25oCAmps
14830 Valley V iew Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power .com * www .ssdi-power.com
TO-259 (P) SMD2 (S2)TO-258 (N)
N, P
S2
SOLID STATE DEVICES, INC.
V600 -V(BR)CES
Collector - Emitter Breakdown Voltage
(VGE = 0V, IC = 2mA)
V35
Gate - Emitter Threshold Voltage
(VGE = VCE, IC = 1mA)
µµ
µµ
µA
mA
-
-150
12
ICES
Zero Gate Voltage Collector Current
(VCE = 600V, VGE = 0V)
- 120IGES
Gate - Emitter Leackage Current
(VGE = 30V, VCE = 0V)
pF--Ciss
MIN MAX
ELECTRICAL CHARACTERISTICS 5/ SYMBOL UNITS
-pF
Output Capacitance
(VCE = 25V, VGE = 0V, f = 1MHz) -Coss
(VCC = 400V, IC = 50ADC,
VGE = 15 / 0V, RG = --Ω,
tP = 10µsec, Duty Cycle ≤ 1%
Tj = 150oC)
T urn-On Delay Time td(on) -nsec
VGE (th)
-
NOTES:
* Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3 / For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations Available for N and P (TO-258
and TO-259) Packages Only.
5 / All Electrical Characteristics @25oC, Unless Otherwise Specified.
SSG42N60
SERIES
Reverse T ransfer Capacitance
(VCE = 25V, VGE = 0V, f = 1MHz) -Crss
T urn-Off Delay Time
Rise Time tr-nsec
td(off) -nsec
-
-
V- 2.5
Collector - Emitter Saturation Voltage
(VGE = 15V, IC = 50A) VCE (SAT)
14830 Valley V iew Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power .com * www .ssdi-power .com
PIN ASSIGNMENT
Emitter Gate
Pin 3
Pin 3
CollectorPACKAGE
Pin 2
Pin 2
Pin1
Pin 1
TO-258
TO-259
A vailable Part Numbers:
SSG42N60N SSG42N60NDB SSG42N60NUB
SSG42N60P SSG42N60PDB SSG42N60PUB
SSG42N60S2
Pin 3Pin 2Pin 1SMD2
nA
Input Capacitance
(VCE = 25V, VGE = 0V, f = 1MHz)
-pF
Fall Time tf-nsec
-
-
4
-
-
-
2750
TYP
250
25
50
30
500
2
360
TJ = 25oC
TJ = 100oC
Reverse Diode Forward Voltage Drop
(VGE = 0V) -VF1.35
1.55 V-
IF = 20A
IF = 40A
Reverse Diode Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A) -tRR 35 nsec-
