NVMFS5C426N MOSFET - Power, Single, N-Channel 40 V, 1.3 mW, 235 A Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 1.3 mW @ 10 V 235 A D (5,6) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS 20 V ID 235 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State PD W 128 ID PD W 3.8 1.9 IDM 900 A TJ, Tstg -55 to + 175 C IS 122 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 19 A) EAS 739 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM A 41 29 TA = 100C TA = 25C, tp = 10 ms N-CHANNEL MOSFET 64 TA = 100C TA = 25C S (1,2,3) 166 TC = 100C TA = 25C G (4) 1 DFN5 (SO-8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C426N XXXXXX = (NVMFS5C426N) or XXXXXX = 426NWF XXXXXX = (NVMFS5C426NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Symbol Value Unit Junction-to-Case - Steady State RqJC 1.2 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 39 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2015 July, 2019 - Rev. 3 1 Publication Order Number: NVMFS5C426N/D NVMFS5C426N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 9.6 VGS = 0 V, VDS = 40 V mV/C TJ = 25C 10 TJ = 125C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 170 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) 2.5 3.5 -8.6 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 1.1 V mV/C 1.3 145 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 4300 VGS = 0 V, f = 1 MHz, VDS = 25 V 2100 pF 59 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A Threshold Gate Charge QG(TH) 13 Gate-to-Source Charge QGS 20 Gate-to-Drain Charge QGD Plateau Voltage VGP 4.7 td(ON) 15 VGS = 10 V, VDS = 20 V; ID = 50 A 65 nC 12 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 47 ns 36 9.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.82 TJ = 125C 0.68 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 63 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 34 ns 29 92 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C426N 10 V to 6.0 V 5.2 V ID, DRAIN CURRENT (A) 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0.0 4.8 V 4.4 V 4.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VDS = 10 V TJ = 25C TJ = 125C 0 4 3.5 3 2.5 2 1.5 1 0.5 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 2.2 6 5 7 1.8 1.6 1.4 1.2 VGS = 10 V 1.0 0.8 0.6 0 20 40 60 100 120 140 160 180 200 80 ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.E-03 VGS = 10 V ID = 50 A IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 4 TJ = 25C 2.0 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.4 1.2 1.0 1.E-04 TJ = 150C 1.E-05 TJ = 125C 1.E-06 0.8 0.6 -50 3 Figure 2. Transfer Characteristics 4.5 1.6 2 Figure 1. On-Region Characteristics TJ = 25C ID = 50 A 1.8 1 TJ = -55C VGS, GATE-TO-SOURCE VOLTAGE (V) 5 0 3.0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS TJ = 85C -25 0 25 50 75 100 125 150 175 1.E-07 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C426N C, CAPACITANCE (pF) 10000 VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS COSS 1000 CRSS 100 10 VGS = 0 V TJ = 25C f = 1 MHz 5 0 15 10 20 25 30 35 40 7 6 QGD QGS 5 4 3 VDS = 20 V ID = 50 A TJ = 25C 2 1 0 10 0 20 30 40 60 50 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 100 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) 8 QG, TOTAL GATE CHARGE (nC) 100 tr td(off) td(on) 10 VGS = 10 V VDD = 20 V ID = 50 A tf 1 10 10 TJ = 150C TJ = 125C 1.0 0.3 100 0.4 0.5 0.6 TJ = 25C TJ = -55C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 10 ms 100 TJ = 25C IPEAK, (A) ID, DRAIN CURRENT (A) QT 9 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 1.0 10 10 1 TC = 25C VGS 10 V Single Pulse 0.1 0.1 0.5 ms 1 ms TJ = 100C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 10 1 1E-4 100 1E-3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E-2 NVMFS5C426N TYPICAL CHARACTERISTICS 100 RqJA (C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping NVMFS5C426NT1G 5C426N DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS5C426NWFT1G 426NWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C426NT3G 5C426N DFN5 (Pb-Free) 5000 / Tape & Reel NVMFS5C426NWFT3G 426NWF DFN5 (Pb-Free, Wettable Flanks) 5000 / Tape & Reel NVMFS5C426NAFT1G 5C426N DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS5C426NWFAFT1G 426NWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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