TGA4823-2-SM - TriQuint Semiconductor

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Primary Applications

Product Description

Key Features

Measured Performance

9.9 - 12.5 Gb/s Linear/Limiting Optical Modulator Driver

•Mach-Zehnder Modulator Driver for Metro and

Long Haul

•Up to 10 Vpp Linear Output Voltage

•> 12 Vpp Limiting Mode Output Voltage

•Gain: 19 dB

•Integrated High Frequency Bias Tee

•Internal DC blocks

•Single-ended Input / Output

•Bias: Vd = 8 V, Id = 310 mA, Vctrl = +1 V,

Vg = -0.3 V Typical for Linear operation

•Package Dimensions: 8 x 8 x 2.1 mm

The TriQuint TGA4823-2-SM is part of a series of

optical driver amplifiers suitable for a variety of

driver applications.

The TGA4823-2-SM is a high power wideband

AGC amplifier that typically provides 19 dB small

signal gain with 19 dB AGC range.

The TGA4823-2-SM is an excellent choice for

applications requiring high drive combined with

high linearity. The TGA4823-2-SM has

demonstrated capability to deliver 10Vpp while

maintaining output harmonic levels near -30dBc for

a 2GHz fundamental.

The TGA4823-2-SM requires a low frequency

choke and control circuitry.

RoHS compliant and Lead-Free finish. MSL1 per

IPC/JEDEC J-STD-020C . Evaluation boards

available on request.

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V,

Vg ≈ -0.3 V Typical

PRBS = 231-1; CPC = 50%, 10.7 GB/s; Vin = 1Vpp

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Table II

Recommended Linear Operating Conditions

Table I

Absolute Maximum Ratings 1/

Symbol Parameter Value Notes

Vd-Vg Drain to Gate Voltage 12 V

Vd Drain Voltage 9 V 2/

Vg Gate Voltage Range -5 to 0 V 2/

Vctrl Control Voltage Range -1 to +2 V 2/

Id Drain Current 400 mA 2/

Ig Gate Current Range -1.8 to 18.9 mA

Ictrl Control Current Range -1.8 to 18.9 mA

Pin Input Continuous Wave Power 27.8 dBm

Tchannel Channel Temperature 200 °C 2/

1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed

under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect

device lifetime. These are stress ratings only, and functional operation of the device at these

conditions is not implied.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the

maximum power dissipation listed in Table IV.

Symbol Parameter 1/ Value

Vd Drain Voltage 8 V

Id Drain Current 310 mA

Id_Drive Drain Current under RF Drive 350 mA

Vg Typical Gate Voltage -0.3 V

Vctrl Control Voltage 1 V

1/ See assembly diagram for bias instructions.

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Table III

RF Characterization Table

SYMBOL PARAMETER TEST

CONDITIONS

MIN NOMINAL MAX UNITS

Gain Small Signal Gain f = 1.5 – 2.5 GHz

f = 0.1 – 4 GHz

f = 6 GHz

f = 8 GHz

18.5

3dB BW Small Signal 3 dB

Bandwidth 1/

f = 0.1 – 12 GHz 7.5 9.5 - GHz

IRL Input Return Loss f = 0.1 – 7GHz

f = 7.1 – 10 GHz

f = 10.1 – 16 GHz

ORL Output Return Loss f = 0.1 – 4 GHz

f = 4.1 – 7 GHz

f = 7.1 – 11 GHz

f = 11.1 – 16 GHz

Gain Ripple S21 peak-peak gain

variation 2/

f = 0.1 – 0.5 GHz

f = 0.6 – 5 GHz

f = 5.1 – 10 GHz

-0.8

-1.2

-3

0.8

1.2

DLP Deviation from S21

Linear Phase

f = 2 – 10 GHz

f = 10.1 – 15 GHz

-40

-175

+/- 30

+/- 150

175

deg

P2 2nd Harmonic f = 0.5, 2.0, 5.0 GHz

Pout = 22 dBm

---22dBc

P3 3rd Harmonic f = 0.5, 2.0, 5.0 GHz

Pout = 22 dBm

---26dBc

Psat Saturated Output

Power

f = 2 GHz - 26

( 12.5)

-dBm

(Vpp)

P1dB Output Power @

1dB Compression

f = 2 GHz - 25 - dBm

AGC Range Small Signal AGC

Range

-19 -dB

Bias: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg = -0.3 V, typical

1/ Fit the S21 curve to 4th order polynomial. AssignAve gain = |S21| measured between 1.5 and 2.5

GHz. Determine 3dB point from polynomial fit to S21 curve.

2/ Ripple cacluation is defined the difference between measured S21 value (dB) and a 4th order (or less)

polynomial fit for S21 (dB) for frequency range = 0.1 to 12 GHz.

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Table IV

Power Dissipation and Thermal Properties

1/ For a median life of 1E+6 hours, Power Dissipation is limited to

Pd(max) = (150 °C – Tbase °C)/θjc.

2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For

maximum life, it is recommended that channel temperatures be maintained at the lowest possible

levels.

Parameter Test Conditions Value Notes

Maximum Power Dissipation Tbaseplate = 70 °C Pd = 3.17 W

Tchannel = 150 °C

Tm = 1.0E+6 Hrs

1/2/

Thermal Resistance, θjc Vd = 8 V

Id = 310 mA

Pd = 2.48 W

θjc = 24.3 (°C/W)

Tchannel = 130 °C

Tm = 5.8E+6 Hrs

Thermal Resistance, θjc

Under RF Drive

Vd = 8 V

Id = 350 mA

Pout = 26.5 dBm

Pd = 2.36 W

θjc = 24.3 (°C/W)

Tchannel = 127 °C

Tm = 7.6E+6 Hrs

Mounting Temperature Refer to Solder Reflow

Profiles (pp16)

Storage Temperature -65 to 150 °C

Median Lifetime (Tm) vs. Channel Temperature

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Measured DataMeasured Data

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg ≈ -0.3 V Typical

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Measured Data

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg ≈ -0.3 V Typical

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Measured Data

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg ≈ -0.3 V Typical

Freq = 2 GHz

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Measured DataMeasured Data

Linear Mode:

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg ≈-0.3 V Typical

PRBS = 231-1; CPC = 50%, 10.7 GB/s

Input Eye: Vin = 500 mVpp Output Eye: Vin = 500 mVpp, Vopp = 5 Vpp

Input Eye: Vin = 250 mVpp Output Eye: Vin = 250 mVpp, Vopp = 2.5 Vpp

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Measured DataMeasured Data

Linear Mode:

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg ≈-0.3 V Typical

PRBS = 231-1; CPC = 50%, 10.7 GB/s

Input Eye: Vin = 1 Vpp Output Eye: Vin = 1 Vpp, Vopp = 9.3 Vpp

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Measured DataMeasured Data

Limiting Mode:

Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg ≈-0.3 V Typical

PRBS = 231-1; CPC = 50%, 10.7 GB/s

Input Eye: Vin = 1700 mVpp Output Eye: Vin = 1700 Vpp, Vopp = 4.2 Vpp

Output Eye: Vin = 1700 Vpp, Vopp = 8.3 Vpp Output Eye: Vin = 1700 Vpp, Vopp = 11 Vpp

TGA4823-2-SM

May 2012 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Electrical Schematic

Bias Procedures

Vd=8V, CPC=50%

Bias ON

1. Disable the output of the PPG

2. Set Vd = 0V, Vctrl = 0V & Vg = 0V

3. Set Vg = -1.5V

4. Increase Vd to 8V observing Id

- Assure Id = 0mA

5. Set Vctrl = +1V

- Id should still be 0mA

6. Make Vg more positive until Id = 310mA.

Vg will be approximately -0.3V.

7. Enable the output of the PPG.

8. Output Swing Adjust: Adjust Vctrl slightly positive to increase output swing or

adjust Vctrl slightly negative to decrease the output swing.

9. Crossover Adjust: Adjust Vg slightly positive to push the crossover down or

adjust Vg slightly negative to push the crossover up.

Bias OFF

1. Disable the output of the PPG

2. Set Vctrl = 0V

3. Set Vd = 0V

4. Set Vg = 0V

TGA4823-2-SM

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Recommended Application Circuit

TGA4823-2-SM

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Recommended Assembly Diagram

VCTRL

VD_Bypass

RFin RFout

TGA4823-2-SM

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Package Pinout

Pin Description

1,2,3,5,6,7,8,9,10,

11,13,14,15,16,18,

19,20,21,22,

23,25,28

N/C

4RF In

12 Vg

17 RF Out

24 Vd

26 Vd_Bypass

25, 27 Vctrl

29 GND

28 222324252627

111098

11 10 9 8

14 13 12

24 25 26 27

22 23

Pin 1

indicator

TGA4823-2-SM

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Mechanical Drawing

Units: Millimeters

Materials:

Package base Aluminum Nitride (AlN)

Package lid White Alumina (Al

)

Pad finish on package base:

Electroless gold (Au) 0.5 – 1.0 um

Over

Electroless nickel (Ni) 2.0 um min.

Part Markings:

YY = Assembly year, WW= Assembly week, ZZZ = Serial Number, DXXXXXXX = Batch ID

TGA4823-2

YYWW ZZZ

DXXXXXXX

TGA4823-2-SM

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Assembly Notes

Ordering Information

Recommended Surface Mount Package Assembly

•Proper ESD precautions must be followed while handling packages.

•Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.

•TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow

oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles

are listed in the table below.

•Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot

placement. The volume of solder paste depends on PCB and component layout and should be well

controlled to ensure consistent mechanical and electrical performance.

•Clean the assembly with alcohol.

Reflow Profile SnPb Pb Free

Ramp-up Rate 3 °C/sec 3 °C/sec

Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C

Time above Melting Point 60 – 150 sec 60 – 150 sec

Max Peak Temperature 240 °C 260 °C

Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec

Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec

Typical Solder Reflow Profiles

Part Package Style

TGA4823-2-SM 8x8 Surface Mount