2SJ668
2004-07-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ668
Relay Drive, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = −100 µA (max) (VDS = −60 V)
Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS −60 V
Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V
Gate−source voltage VGSS ±20 V
DC (Note 1) ID −5 A
Drain current
Pulse (Note 1) IDP −20 A
Drain power dissipation PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 40.5 mJ
Avalanche current IAR −5 A
Repetitive avalenche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W
Thermal resistance, channel to
ambient Rth (ch−a) 125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC ―
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)
JEDEC ―
JEITA SC-64
TOSHIBA 2-7J1B
Weight: 0.35 g (typ.)
2SJ668
2004-07-01
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V — — ±10 µA
Drain cut−off current IDSS V
DS = −60 V, VGS = 0 V — — −100 µA
V (BR) DSS I
D = −10 mA, VGS = 0 V −60 — — V
Drain−source breakdown voltage
V (BR) DSX I
D = −10 mA, VGS = 20 V −35 — — V
Gate threshold voltage Vth V
DS = −10 V, ID = −1 mA −0.8 — −2.0 V
VGS = −4 V, ID = −2.5 A — 0.16 0.25
Drain−source ON resistance RDS (ON)
VGS = −10 V, ID = −2.5 A — 0.12 0.17
Ω
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.5 5.0 — S
Input capacitance Ciss — 700 —
Reverse transfer capacitance Crss — 60 —
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
— 90 —
pF
Rise time tr — 14 —
Turn−on time ton — 24 —
Fall time tf — 14 —
Switching time
Turn−off time toff
— 95 —
ns
Total gate charge (Gate−source
plus gate−drain) Qg — 15 —
Gate−source charge Qgs — 11 —
Gate−drain (“miller”) charge Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
— 4 —
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — −5 A
Pulse drain reverse current
(Note 1)
IDRP — — — −20 A
Forward voltage (diode) VDSF I
DR = −5 A, VGS = 0 V — — 1.7 V
Reverse recovery time trr — 40 — ns
Reverse recovery charge Qrr
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / µS — 32 — nC
Marking
Duty
<
=
1%, tw = 10 µs
−10 V
0 V
VGS
RL =
12 Ω
VDD
∼
−
−30 V
ID = −2.5 A
Output
4.7 Ω
J668
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2SJ668
2004-07-01
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ID – VDS
Drain current ID (A)
Drain−source voltage VDS (V)
0
−5
−1
−3
−2
−4
0 −0.4 −2.0
−0.8 −1.2 −1.6
−10
−8
−6
−2.8
−3.5
−4.
VGS = −2.5V
Common source
Tc = 25°C
Pulse test
ID – VDS
Drain current ID (A)
Drain
−
source voltage VDS (V)
0
−10
−2
−6
−4
−8
−20 −10
−4−6 −8
−10
−8
−
6−4
−3.5
−3
VGS = −2.5 V
Common source
Tc = 25°C
Pulse test
ID – VGS
Drain current ID (A)
Gate−source voltage VGS (V)
0
−10
−2
−6
−8
−1 0 −5
−3 −4
100
25
Tc = −55°C
Common source
VDS = −10 V
Pulse test
VDS – VGS
Drain−source voltage VDS (V)
Gate
−
source voltage VGS (V)
0
−2.0
−0.4
−1.2
−0.8
−1.6
−40 −20
−8−12 −16
−5
−2.5
ID = −1.2
A
Common source
Tc = 25°C
Pulse test
⎪Yfs⎪ − ID
Forward transfer admittance ⎪Yfs⎪ (S)
Drain current ID (A)
0.1
100
10
1
−0.1 −100−1
Common source
VDS = −10 V
Pulse test
Tc = −55°C
25
100
RDS (ON) − ID
Drain−source ON resistance
RDS (ON) (Ω)
Drain current ID (A)
0
0.4
0.5
0 −2 −10
Common source
Tc = 25°C
Pulse test
−10 −4
−3
−4
−2
0.3
0.1
0.2
−6 −8
VGS = −10V
−4 V
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2004-07-01
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RDS (ON) − Tc
Drain−source ON resistance
RDS (ON) (Ω)
Case temperature Tc (°C)
0
−0.4
−0.1
−0.3
−0.2
−40 −80 1600 40 120 80
Common source
Pulse test
ID = −5 A
−2.5
−1.2
IDR − VDS
Drain reverse current IDR (A)
Drain
−
source voltage VDS (V)
0.1
10
0.201.2
0.60.4 0.8 1.0
Common source
Tc = 25°C
Pulse test
−10
−5
−3
−1VGS = 0 V
Case temperature Tc (°C)
PD − Tc
Drain power dissipation PD (W)
40
10
20
30
0
0 80 20040 160
Vth − Tc
Gate threshold voltage Vth (V)
Case temperature Tc (°C)
0
−80 040 80 120 160 −40
−2.0
−0.4
−1.2
−0.8
−1.6
Common source
VDS = −10 V
ID = 1 mA
Pulse test
Capacitance C (pF)
Capacitance – VDS
Drain−source voltage VDS (V)
10
100
1000
10000
−0.1 −1 −10 −100
Ciss
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
VGS = −10 V
VGS = −4 V
−5
−2.5
−1.2
120
Total gate charge Qg (nC)
Drain−source voltage VDS (V)
Dynamic input/output
characteristics
Gate−source voltage VGS (V)
−50
−40
0
−30
−20
−10
0 25 30
10 5
−10
−5
−20
−25
0
−15
VGS
VDS
VDD = −48 V
−12V −24V
Common source
ID = −5 A
Ta = 25°C
Pulse test
20 15
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2004-07-01
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rth − tw
Safe operating area
EAS – Tch
Drain-source voltage VDS (V)
Pulse width tw (s)
Channel temperature (initial) Tch (°C)
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
Avalanche energy EAS (mJ)
Drain current ID (A)
ID max (continuous)
ID max (pulsed) *
DC operation
Tc = 25°C
1 ms * 100 µs *
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature. 0
25
10
30
50
40
50 75 100 125 150
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
0.1
1
10
0.01
0.02
0.05
0.1
0.2
Duty = 0.5
Single Pulse
T
PDM
t
Duty = t/T
Rth (ch-c) = 6.25°C/W
RG = 25 Ω
VDD = −25 V, L = 2.2 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
20
−0.1 −1 −10 −100
VDSS max
−1
−10
−100
−0.1
Wave form
IAR
BVDSS
VDD V
DS
Test circuit
−15 V
0 V
2SJ668
2004-07-01
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may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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030619EAA
RESTRICTIONS ON PRODUCT USE
