SILICON PLANAR NPN GENERAL PURPOSE AMPLIFIERS PRELIMINARY DATA The BSY 53 and BSY 54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Vecso Collector--base voltage (I_= 0) VcEo Collector-emitter voltage (|, 0) Veso Emitter-base voltage (I-= 0) Io Collector current Prot Total power dissipation at Tamp= 25C at Tease = 25C Tstg, Tj Storage and junction temperature 75 30 7 750 0.8 3 -65 to 200 3 OfZS2rp<<< MECHANICAL DATA Collector conne et 217 Dimensions in mm - (sim, to TO-39) 10/78 THERMAL DATA Rin j-case Thermal resistance junction-case max 58 C/W Rtn j-amp Thermal resistance junction-ambient max 220 C/W ELECTRICAL CHARACTERISTICS (Tamp= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit lcBo Collector cutoff current! Veg= 60V 10] nA (le= 0) Vep= 60V Tamp= 150C 10} UA lego Emitter cutoff current | Veg= 5V 10} nA (tc= 0) Vee (sat)* Collector-emitter Ic=150mA I=15mA 0.15 O06] V saturation-voltage le=500mA 1g=50mA 0.5 1.2) V Vee gat) Base-emitter saturation) Ic= 150mA_ Ig= 15 mA 0.95 1.2 voltage hee DC current gain for BSY 53 le=0.1mMA Vee= 10V 20 40 Ik=1mA Vece= 10V 50 *Tle= IMA Ver= 10V 35 65 - *ile=150mMA VeE= 10V 40 120; *lte=500mMA VeE= 10V 20 35 _ for BSY 54 1o=0.01mMA Vee= 10V 20 55 _ lG=O1mMA Vee= 10V 35 80 - [c= 1mA Vee= 10V 100 - *lle=10mMA Vee= 10V 80 135 _ *lte=150mMA Vee= 10V 100 300) *)1le=500mA Vee= 10V 40 60 - ty Transition frequency {c= 50mA Vce= 10V f = 50 MHz 100 MHz Cego Collector-base 1e=0 Vep= 10V capacitance f= 1 MHz 10 pF CeBo Emitter-base ic=0 Vep= 0.5V capacitance f = 1 MHz 23 pF NF Noise figure fc=O0.3mMA Vee= 10V Rg= 1.5 ka f=30Hz to 15kHz 3 8| dB * Pulsed: pulse duration = 300 ws, duty cycle = 1%. 218 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.} Unit Nite Smal! signal current lce=1mA Vee= 10V gain f=1kHz for BSY 53 30 100| for BSY 54 50 250; hie Input admittance lc=imA Vece= 10V f=1kHz for BSY 53 0.8 4.5} ka for BSY 54 1.6 9) ka Ne Reverse voltage ratio lc=1imA Vce= 10V f=1kHz 3104} Hoe Output admittance lc=imA Vce= 10V f= 1kHz for BSY 53 3.5 10] us for BSY 54 4.5 12.5] us | DC normalized current gain DC normalized current gain (for BSY 53 only) (for BSY 54 only) G- 32091 G-32IN NFER MEE N Tamb =150C 16 16 1.2 V2 0.8 as 04 O4 tat le =180mA Vatl=150mA 228C Vog et0V 225% Veg =10V 0 0 10" 1 10 10? Ig (ma) 0" ' 0 10" Te (ma) 219 Collector-emitter saturation voltage NF vs. collector current G@- 3211 G-3210 Vce(sat), NF W) (d8) 8 2 6 10 8 6 4 4 2 2 -2 10 2 6 8 2 soe 9 2 4 68 2 4 68 2 4 68 10 10? Ig tra) 197 10" 1 be (ma) Normalized h parameters Power rating chart G-3206 9 40 80 120 wo T("C) 220