U62256
July 15, 2002 1 1
F 32768x8 bit static CMOS RAM
F Access times 70 ns, 100 ns
F Common data inputs and
data outputs
F Three-state outputs
F Typ. operat i ng supply current
70 ns: 50 mA
100 ns: 40 mA
F TTL/CMOS-compatible
F Automatical reduct ion of power
dissipation in long Read Cycles
F Power supply voltage 5 V + 10 %
F Operating temperature ranges
0 to 70 °C
-40 to 85 °C
F CECC 90000 Qual ity Standard
F ESD protection > 2000 V
(MIL STD 883C M3015. 7)
F Latch-up immunity >100 mA
F Package: SOP28 (330 mil)
Standard 32K x 8 SRAM
Features
The U62256 is a static RAM ma nu-
factured using a CMOS process
technology with the following ope-
rating modes:
- Read - Standby
- Write - Data Retention
The memory array is based on a
6-transistor cell.
The circuit is activated by the fal-
ling edge of E. The address and
control inputs open simul taneously.
According to the information of W
and G, the data inputs, or outputs,
are active. In a Read cycle, the
data outputs are activated by the
falling edge of G, afterwards the
data word read will be available at
the outputs DQ0-DQ7. After the
address change, the data outputs
go High-Z until the new information
read is available. The data outputs
have not preferred state.
The Read cycle is finished by the
falling edge of W, or by the rising
edge of E, respectively.
Data retention is guaranteed down
to 2 V. With the exception of E, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required.
Description
Pin Conf i gurat ion
1
A14 VCC
28
2
A12 W
27
4
A6 A8
25
5
A5 A9
24
3
A7 A13
26
6
A4 A11
23
7
A3 G
22
8
A2 A10
21
12
DQ1 DQ5
17
9
A1 E
20
10
A0 DQ7
19
11
DQ0 DQ6
18
13
DQ2 DQ4
16
14
VSS DQ3
15
Top View
Signal Name Signal Description
A0 - A14 Address Inputs
DQ0 - DQ7 Data In/Ou t
EChip Enable
GOutput Enable
WWrite En able
VCC Power Supply V ol tage
VSS Ground
Pin Descript ion
SOP