u B FNEW ENGLAND SEMICONDUCTOR 2N5954 2N5955 2N5956 SILICON POWER TRANSISTORS 6.0 AMPERE . . + ott MEDIUM-POWER ...General-Purpose Types for Switching Applications PNP SILICON TRANSISTOR in Military, Industrial and Commercial Equipment. 40, 60, 80 VOLTS 40 WATTS COMPLEMENTS TO 2N6372, 2N6273, 2N6274 e LOW SATURATION VOLTAGES @ MAXIMUM-SAFE-AREA-OF-OPERATION CURVES THERMAL-CYCLE RATINGS e HERMETICALLY-SEALED JEDEC TO-66 PACKAGE > e HIGH GAIN AT HIG TO-66 MAXIMUM RATINGS RATINGS* SYMBOL | 2N5954 | 2N5955 | 2N5956 | UNITS Collector-Emitter Voltage Vero 80 60 40 Vdc Collector-Base Voltage Veso 90 70 50 Vdc Emitter-Base Voltage VeRO 5 Vdc Collector Current -- Continuous le 6 Adc Base Current -- Continuous ly 2 Adc Transistor Dissipation @T,=25C Py 4.0 W T, = 25C 5.8 wc Operating & Storage Junction Temperature Range T; Tote -65 to +200 "Cc Pin Temperature (During Soldering) @ distances > 4" (0.8mm) from seating plane for 10s max +235 *In accordance with JEDEC registration data For pnp devices, voltage and current values are negative PIN 1: BASE SEATING PLANE PIN 2: EMITTER CASE: COLLECTOR NEW ENGLAND SEMICONDUCTOR 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-301 REV: u B FNEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS FOR P-N-P TYPES (T. =25C unless otherwise noted) 2N5954 2N5955 2N5956 Test Conditions Limits Voltage Current 2N5954 2N5955 2N5956 Characteristic Symbol Vde Ade Units Voce | Var Ic Ip min | max |] min | max | min | max Collector-Cutoff Current -35 -100 External base-to-emitter resistance Ice -55 -100 pA (Rg) = 100 -75 -100 Base-Emitter Junction Reverse 45 [15 -100 Biased (Rg) = 1002 -65 11.5 -100 pA loex -85 [15S -100 Base-Emitter Junction Reverse -45 [| 1.5 -2 Biased (Rg,) = 1002 65 | 1.5 -2 mA T, =150C 85 | 1.5 -2 Base Open -25 | Icso | -45 -1 mA -65 -] Emitter-Cutoff Current [eno 5 -0.1 -0.1 -0.1 J mA DC Forward Current Transfer Ratio -4 -3 20 | 100 "FE -4 -2.5 20 | 100 -4 -2" 20 100 -4 -6 5 5 5 Collector-to-Emitter Sustaining Volt | Vexrovsus) -0.1 -80 -60 -40 External base-to-emitter resistance Vv (Raz) = 1002 Vere) -0.1 -85 -65 -45 Base-Emitter Junction Reverse Biased (Rpg) = 1002 VeEx(sus) -0.1 -90 -70 -50 Base-Emitter Voltage en -3 -2 Vee -4 -2.5 -2 Vv -4 -2 -2 Collector-to-Emitter Saturation Volt -3" -0.3 -1 Vee;sat) -2.5 | -0.25 -1 Vv -2 -0.2 -| Magnitude of Common Emitter Small- Signal, Short-Circuit, Foward | fe | -4 1 5 5 5 Current Transfer Ratio (f = 1MHz) Common-Emitter, Small-Signal, Short-Circuit, Forward-Current Me -4 -0.5 25 25 25 Transfer Ratio (f = 1MHz) Thermal Resistance: Junction-to-Case Rec 43 4.3 4.3 | c/w *Pulsed, pulse duration = 300us, duty factor = 1.8% "CAUTION: Sustaining voltages Vegocsusyy Vcrrisus) 22d Veex(sus, MUST NOT be measured on a curve tracer. NEW ENGLAND SEMICONDUCTOR 6 Lake Street 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 Lawrence,MA 01841 T4-4.8-860-301 REV: