FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. D D -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA = 25C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage 20 V ID Drain Current -9 A - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation -50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range W 1 -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS4435A FDS4435A 13'' 12mm 2500 units a2001 Fairchild Semiconductor Corporation FDS4435A Rev. D FDS4435A October 2001 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient ID = -250 A,Referenced to 25C Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward -1 -10 100 A IGSSF VDS = -24 V, VGS = 0 TJ = 125C VGS = 20 V, VDS = 0 V IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics -30 V -26 mV/C nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = -250 A,Referenced to 25C Static Drain-Source On-Resistance VGS = -10 V, ID = -9 A -1 -1.7 -2 4.2 TJ = 125C VGS = -4.5 V, ID = -7 A V mV/C 0.015 0.017 0.021 0.030 0.023 0.025 -40 ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -10 V, ID = -9 A 25 A S VDS = -15 V, VGS = 0 V f = 1.0 MHz 2010 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 590 pF 260 pF (Note 2) VDD = -15 V, ID = -1 A VGS = -10 V, RGEN = 6 12 22 ns 15 27 ns Turn-Off Delay Time 100 140 ns Turn-Off Fall Time 55 80 ns 21 30 nC VDS = -15 V, ID = -9 A VGS = -5 V, 6 nC 8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A -2.1 trr Source-Drain Reverse Recovery Time IF = -10 A, dlF/dt = 100 A/S (Note 2) A 0.75 -1.2 V 36 80 ns Notes: 1: RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105 C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125 C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% FDS4435A Rev. D FDS4435A Electrical Characteristics FDS4435A Typical Characteristics 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE - I D, DRAIN-SOURCE CURRENT (A) VGS= -10V -6.0V -4.5V -4.0V -3.5V -3.0V -2.5V 2.2 VGS = -3.5V 2 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V -10V 1 0.8 0 -V DS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.07 1.6 RDS(ON), ON RESISTANCE (OHM) VGS = -10V ID = -9A 1.4 1.2 1 0.8 ID = -4.5A 0.06 0.05 0.04 O 0.03 TJ = 125 C 0.02 O TJ = 25 C 0.01 0 0.6 -50 -25 0 25 50 75 100 125 2 150 4 TJ, JUNCTION TEMPERATURE (OC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 40 TJ = -55 C -IS, REVERSE DRAIN CURRENT (A) O VDS = -5V -ID, DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics NORMALIZED ON-RESISTANCE 10 O 25 C O 30 125 C 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDS4435A Rev. D (continued) 2500 ID = -8.8A f = 1 MHz VGS = 0 V VDS = -5V -10V 8 2000 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 CISS 1500 1000 2 500 0 0 COSS CRSS 0 5 10 15 20 25 30 35 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics Figure 7. Gate-Charge Characteristics 50 100 RDS(ON) LIMIT SINGLE PULSE RJA =125C/W TA = 25C 100s 40 1ms 10 POWER (W) 10ms 100ms 1s 10s 1 DC VGS = -10V SINGLE PULSE o RJA = 125 C/W 0.1 30 20 10 o TA = 25 C 0.01 0.1 1 10 0 0.001 100 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area TR ANSI ENT TH ER MAL RESISTANC E -ID, DRAIN CURRENT (A) FDS4435A Typical Characteristics 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 10. Single Pulse Maximum Power Dissipation 1 0.5 0.2 0.1 0.05 D = 0.5 R J A (t) = r(t) * R J A R J A= 125C /W 0.2 0.1 00 .5 P(pk ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RJA ( t) 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 1 10 100 300 t 1, TI M E (s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS4435A Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4