YI YNPNEBRRAVGBROIYIUAY SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O RAHA Unit in m Power Amplifier Applications. 2 be 250MAX. 3 . . be] - BARE CH. } Vopo=150V( Min) g peeMes s| 4 OQ _ 7. . ed . @ * FY Yo Yay ARMOR, > fp= 15 MHz ( Typ.) f- { +1 4 a * 28B68ltaoy FI) ev eVCHOEt, 10-008 ee BOW n4 7% 74a -F 4 tT yr THABCKRMCT. 3 tl + Complementary to 2SB681. O2+02 4 a * Recommended for 80W HighFiderity Audio 26.9402 Frequency Amplifier Output Stage. +008 o 4.0 015 2 . . Pos oats ~ a a5 1 | < BATH MAXIMUM RATINGS ( Ta=25C) 40.0 MAX. CHARACTERISTIC SMBOL RATING UNIT a veP ee R-ARBE!E Vaso 150 V il. BASE 2 EMITTER auUo pe Diy, * PRE Voro 150 v COLLECTOR (cAsE) Bly + X~ 2 fi BE VEpo 5 v JEDEC TO3 toe fF FF BO Tg 12 A EIAI TO-3, TB-3 x 2 * 8 it Ip 12 A TOSHIBA 221AlA au 2? # #8 4( To= 25 ) Fo 190 W FTFevPimacr7s 38 - & a iF T; <1 50 C MOUNTING KIT No. Acvs a Fam FI 3 Tote 65~150 c MAMHM ELECTRICAL CHARACTERTICS ( Ta= 25 ) CHARACTERISTIC SYMBOL CONDITION MIN. | TYP. | Max. | UNIT av # L > Bt B ot Iapo Vop=100V, Ip=0 _ _ 100 HA mz ft > #2 L 2 HH EB oft Ippo Vep=5V, Ig=0 - - 100 HA avg R + ri SMA EE [Ve pR)}cHo Ig=Q1A, Ip=O | 150 - _ Dive - X-ABMK BE V( BR) BBO Ip=10mA, Ip=0 5 - v aA kt Ek #8 & DFE Vop=5V, Ig=1A 40 _ 140 (Note) augee- ri, sf Mee H | Vor(sat) Ig=5A, Ip=O5A _ - 25 aA m+ Diy B fi} BF VBE Von=HS5V, Ig=5A _ _ 1.5 b Pv YY yr RR fr Vap=l10V, Ig=1A 15 _ avez 2h HB & Cop Vep=10V, Ip=O, f=1MH2 - 250 - Note | hppa hpp classification Ri 40~ 80, 0: 70~140 R65