1N4148
www.vishay.com Vishay Semiconductors
Rev. 1.3, 04-Dec-13 1Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: DO-35
Weight: approx. 105 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diode
• Electrically equivalent diodes:
1N4148 - 1N914
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
1N4148 1N4148-TAP or 1N4148TR V4148 Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 100 V
Reverse voltage VR75 V
Peak forward surge current tp = 1 μs IFSM 2A
Repetitive peak forward current IFRM 500 mA
Forward continuous current IF300 mA
Average forward current VR = 0 IF(AV) 150 mA
Power dissipation l = 4 mm, TL = 45 °C Ptot 440 mW
l = 4 mm, TL 25 °C Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 150 °C
1N4148
www.vishay.com Vishay Semiconductors
Rev. 1.3, 04-Dec-13 2Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 10 mA VF1V
Reverse current
VR = 20 V IR25 nA
VR = 20 V, Tj = 150 °C IR50 μA
VR = 75 V IR5μA
Breakdown voltage IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms V(BR) 100 V
Diode capacitance VR = 0 V, f = 1 MHz,
VHF = 50 mV CD4pF
Rectification effiency VHF = 2 V, f = 100 MHz r45 %
Reverse recovery time
IF = IR = 10 mA,
iR = 1 mA trr 8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 trr 4ns
0
0.2
0.4
0.6
0.8
1.2
V- Forward Voltage (V)
F
T
j
- Junction Temperature (°C)
94 9169
1.0 I
F
= 100 mA
10 mA
1m A
0.1 mA
- 30 30 60 90 120 0
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
IF - Forward Current (mA)
VF - Forward Voltage (V)
2.0
94 9170
Scattering Limit
TJ = 25 °C
1N4148
1
10
100
1000
I
R
- Reverse Current (nA)
V
R
- Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit
1N4148
www.vishay.com Vishay Semiconductors
Rev. 1.3, 04-Dec-13 3Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO-35_02
Cathode identification
3.4 (0.134) max.
25.4 (1.000) min.
1.75 (0.069)
1.5 (0.059)
0.55 (0.022) max.
21145
Created - Date: 17. March 2008
Document no.: 6.560-5004.12-4
25.4 (1.000) min.
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Revision: 02-Oct-12 1Document Number: 91000
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