MAXIMUM RATINGS: (TC=25°C) SYMBOL BU806 BU807 UNITS
Collector-Base Voltage VCBO 400 330 V
Collector-Emitter Voltage VCEV 400 330 V
Collector-Emitter Voltage VCEO 200 150 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 8.0 A
Peak Collector Current ICM 15 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 60 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 70 °C/W
Thermal Resistance ΘJC 2.08 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICES V
CE=400V (BU806) 100 A
ICES V
CE=330V (BU807) 100 A
ICEV V
CE=400V, VEB=6.0V (BU806) 100 A
ICEV V
CE=330V, VEB=6.0V (BU807) 100 A
IEBO V
EB=6.0V 3.5 mA
BVCEO I
C=100mA (BU806) 200 V
BVCEO I
C=100mA (BU807) 150 V
VCE(SAT) I
C=5.0A, IB=50mA 1.5 V
VBE(SAT) I
C=5.0A, IB=50mA 2.4 V
VF I
F=4.0A 2.0 V
ton V
CC=100V, IC=5.0A, IB1=50mA, IB2=500mA 0.35 µs
toff V
CC=100V, IC=5.0A, IB1=50mA, IB2=500mA 0.4 1.0 µs
BU806
BU807
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BU806 and
BU807 types are NPN Silicon Darlington Transistors
designed for high voltage, high current, fast switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R0 (4-August 2011)
www.centralsemi.com
BU806
BU807
NPN SILICON
DARLINGTON TRANSISTOR
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R0 (4-August 2011)
