CBRHD SERIES cent ral Semiconductor Corp. HIGH DENSITY SURFACE MOUNT % AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: * Truly efficient use of board space, requires only 42mm? of board space vs. 120mm? of board space for industry standard 1.0 Amp surface mount bridge rectifier. BRIDGE sd * 50% higher density (amps/mmz?) than the industry standard 1.0 Amp surface mount bridge rectifier. HDDIP CASE * Glass passivated chips for high reliability. DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MAXIMUM RATINGS: (T a=25C unless otherwise noted) CBRHD CBRHD CBRHD CBRHD SYMBOL 02 -04 -06 -10* UNITS Peak Repetitive Reverse Voltage VRRM 200 400 600 1000 ~2V DC Blocking Voltage VR 200 400 600 1000 Vv RMS Reverse Voltage VR(RMS) 140 280 420 700 Vv Average Forward Current (Ta=40C)(1) Io 0.5 A Average Forward Current (Ta=40C)(2) Io 0.8 A Peak Forward Surge Current lFSmM 30 A Operating and Storage Junction Temperature TyT stg -65 to +150 C ELECTRICAL CHARACTERISTICS: (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS VE |-=400mA (Per Diode) 1.0 Vv Ip Vpr=Rated Vary 5.0 vA IR Vp=Rated Van, Ta=1 25C 500 pA Cy Vp=4.0V, f=1.0MHz 20 pF (1) Mounted on a Glass-Epoxy PC.B. (2) Mounted on a Ceramic P.C.B. *Available on special order, please consult factory. 104 All dimensions in inches (mm). TOP VIEW -095(2,41) -105(2.87) -017(0.43) -008(0.20) -029(0.74) -014(0,36) -004(0.10) ira i -G608(0.20) -145(3.68) + ~200(5.08) -307(2.72) .252{6.40) .155(3.94) . MAX 1 MUM 117(2.97) .272(8.01) | | ~ ~ ~180(4.87) .190(4.83) ; / +021(0.53) or-7 -023(0,58) -040(1.02) -O80(1t.27) aay +y wt oI 7 ~ -056(1.40) -065(1.65} DATA Salat 105