IXFN230N10 Power MOSFET Single Die MOSFET VDSS = 100V ID25 = 230A RDS(on) 6.0m trr 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 100 100 V V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C, Chip capability 230 A IL(RMS) External lead current limit 200 A IDM TC = 25C, pulse width limited by TJM 920 A IA TC = 25C 100 A EAS TC = 25C 4 J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns Pd TC = 25C 700 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS IISOL 1mA t = 1min t = 1s Md Mounting torque Terminal connection torque Weight S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard package * miniBLOC, with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Avalanche rated * Guaranteed FBSOA * Low package inductance * Fast intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) * * * Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 V 4.0 V 200 nA 100 2 A mA 6.0 m TJ = 125C Easy to mount Space savings High power density Applications * * * * * DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls DS98548F(12/08) (c) 2008 IXYS Corporation, All rights reserved http://store.iiic.cc/ IXFN230N10 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 60A, Note 1 60 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 97 S 19 5600 2750 nF pF pF 40 ns 150 112 60 ns ns ns 570 70 290 nC nC nC RthJC RthCS miniBLOC, SOT-227 B Inches Min. Max. 31.88 8.20 1.240 0.307 1.255 0.323 0.18 C/W C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 C/W E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, pulse width limited by TJM 920 A VSD IF = 100A, VGS = 0V, Note 1 1.2 V 250 ns C A trr IF = 50A, -di/dt = 100A/s, VR = 50V Millimeter Min. Max. 31.50 7.80 Source-Drain Diode QRM IRM Dim. A B 0.05 Symbol Test Conditions (TJ = 25C, unless otherwise specified) M4 screws (4x) supplied 1.2 9.0 Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN230N10 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 240 350 VGS = 10V 9V 8V 7V 200 VGS = 10V 9V 8V 7V 300 ID - Amperes ID - Amperes 250 160 6V 120 80 5V 200 6V 150 100 40 5V 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 240 2.2 VGS = 10V 9V 8V 7V VGS = 10V 2.0 RDS(on) - Normalized 200 ID - Amperes 2.0 VDS - Volts VDS - Volts 160 6V 120 5V 80 1.8 I D = 230A 1.6 I D = 115A 1.4 1.2 1.0 40 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 115A Value vs.Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 220 2.0 200 VGS = 10V External Lead Current Limit 1.8 180 160 TJ = 125C 1.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.4 1.2 140 120 100 80 60 40 1.0 TJ = 25C 20 0.8 0 0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade ID - Amperes (c) 2008 IXYS Corporation, All rights reserved IXYS REF: F_230N10(9Y-N17)12-02-08-D http://store.iiic.cc/ IXFN230N10 Fig. 7. Input Admittance Fig. 8. Transconductance 200 180 180 160 TJ = - 40C 160 140 25C g f s - Siemens ID - Amperes 140 120 100 TJ = 125C 25C - 40C 80 120 125C 100 80 60 60 40 40 20 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 20 40 60 VGS - Volts 100 120 140 160 180 200 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VDS = 50V I D = 100A VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 150 120 TJ = 125C 90 I G = 10mA 6 5 4 3 TJ = 25C 60 2 30 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 100 150 VSD - Volts 200 250 300 350 400 450 500 550 600 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100 1.000 f = 1 MHz Ciss Z(th)JC - C / W Capacitance - NanoFarads 80 ID - Amperes 10 Coss 0.100 0.010 Crss 1 0 5 10 15 20 25 30 35 40 0.001 0.0001 VDS - Volts 0.001 0.01 0.1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1 10 IXFN230N10 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C 1,000 1,000 RDS(on) Limit 25s RDS(on) Limit 100s 100s ID - Amperes External-Lead Limit 10ms 100 1ms ID - Amperes 1ms 100 10ms 100ms 10 10 100ms DC TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 75C Single Pulse 1 DC 1 1 10 100 1 VDS - Volts 10 100 VDS - Volts (c) 2008 IXYS Corporation, All rights reserved IXYS REF: F_230N10(9Y-N17)12-02-08-D http://store.iiic.cc/