SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) . Unit in mm APPLICATIONS . : S.IMAX, Low Noise Audio Amplifier Applications. | A , 3 . 0.55 zrz The ,2SC 3200. is a transistor for low frequency and oas | o z & low noise applications. This device is designed to lower noise | figure in the region of low signal source impedance, and to 123 lower the pulse noise. | This is recommended for the first stages of EQ amplifiers. < e Low Noise :NF=4dB(Typ.), R,=1002, Voe=6V, = 100uA, f=1KHz2 iNF=0. 5dB(Typ.), R, =1K2, Vee=6V, [1,=100uA, f=1KHz 1. EMITTER @ Low Pulse Noise: Low 1/f Noise ; co CTOR e High DC Current Gain: hy, =200~ 700 High Breakdown Voltage: Vego = 120V epee to. = @ MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL | RATING {UNIT CHARACTERISTIC SYMBOL | RATING |UNIT Collector-Base Voltage Vero 120 Vv Emitter Current I; 100 mA Colector-Emitter Voltage | Veco 120 Vv Collector Power Dissipation | P, 300 mW Emitter-Base Voltage Vepo 5 Vv Junction Temperature Tj 125 C Collector Current I, 100 mA || Storage Temperature Range Tstg |-55~125! C Hi ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP, |MAX.|UNIT Collector Cut-off Current lepo Ven = 120V, 1, =0 - | 100; nA Emitter Cut-off Current lezo Vag bV, I,=9 _ _ 100 nA Collector-Emitter Breakdown Voltage View ero | lo=lmA, I,=9 120 | Vv DC Current Gain hee(Note)| Voe=6V, Ip=2mA 200 | | 700 Collector-Emitter Saturation Voltage Voevst? | ico lOmA, I,=lmA _ _ 0.3 V Base-Emitter Voltage Var Voe=6V, Ip=2mA 10.65) Vv Transition Frequency f, . Voe=6V, Io=hmA - 100 | | MHz Collector Output Capacitance , Cy Vep = 10V, Ie=0, f=1MHz |3.0 , pF . Vop=6V, [.=100uA, . _ _ 6 f=10Hz, Rg=10k& Noise Figure NE | yeeros eo 10KO |- |) 2) Vop=6V, 1.=100uA _ 4 _ f=1kHz, Rg=1002 Mi NOTE: According to hr: Classified as follows. GR 200 400 BL - 350 700 KEC 332