2005-10-18
1
BFR182
12
3
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
• fT = 8 GHz, F = 0.9 dB at 900 MHz
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR182 RGs 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS ≤ 93 °C Ptot 250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 230 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
2005-10-18
2
BFR182
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 12 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0 ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain-
IC = 10 mA, VCE = 8 V, pulse measured hFE 70 100 140 -
2005-10-18
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BFR182
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz fT6 8 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.32 0.5 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.8 -
Noise figure
IC = 3 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
F
-
-
0.9
1.3
-
-
dB
Power gain, maximum available1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Gma
-
-
18
12
-
-
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
|S21e|2
-
-
15
9.5
-
-
dB
1Gma = |S21e / S12e| (k-(k²-1)1/2),
2005-10-18
4
BFR182
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF = 0.56639 -
ISE = 8.4254 fA
NR = 0.54818 -
ISC = 5.9438 fA
IRB = 0.071955 mA
RC = 1.8159 Ω
MJE = 0.40796 -
VTF = 0.34608 V
CJC = 490.25 fF
XCJC = 0.19281 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
IS = 4.8499 fA
VAF = 21.742 V
NE = 0.91624 -
VAR = 2.2595 V
NC = 0.5641 -
RBM = 2.8263 Ω
CJE = 8.8619 fF
TF = 22.72 ps
ITF = 6.5523 mA
VJC = 1.0132 V
TR = 1.7541 ns
MJS = 0-
XTI = 3-
BF = 84.113 -
IKF = 0.14414 A
BR = 10.004 -
IKR = 0.039478 A
RB = 3.4217 Ω
RE = 2.1858 -
VJE = 1.0378 V
XTF = 0.43147 -
PTF = 0 deg
MJC = 0.31068 -
CJS = 0 fF
XTB = 0 -
FC = 0.64175
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit: LBI = 0.85 nH
LBO = 0.51 nH
LEI = 0.69 nH
LEO = 0.61 nH
LCI = 0nH
LCO = 0.49 nH
CBE = 73 fF
CCB =84 fF
C
C
E = 165 fF
EHA07524
Transistor C' L
E'
B'
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
2005-10-18
5
BFR182
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2005-10-18
6
BFR182
Package SOT23
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
12
s
Manufacturer
Date code (Year/Month)
Type code
EH
s
2003, July
BCW66
Example
37
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
2005-10-18
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BFR182
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
