AQW414EH
535
PhotoMOS
RELAYS
GU (General Use)-E Type
2-Channel (Form B) Type
mm inch
3.2
.126
6.4
.252
9.86
.388
2.9
.114
6.4
.252
9.86
.388
FEATURES
1. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation dis-
tance between inputs and outputs. Con-
forms to EN41003, EN60950 (reinforced
insulation).
2. Compact 8-pin DIP size
The device comes in a compact
(W)6.4
×
(L)9.86
×
(H)3.2 mm
(W).252
×
(L).388
×
(H).126 inch, 8-pin DIP
size (through hole terminal type).
3. Applicable for 2 Form B use as well
as two independent 1 Form B use
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-le vel analog signals without
distortion.
5. High sensitivity, high speed re-
sponse.
Can control a maximum 0.13 A load cur-
rent with a 5 mA input current. Fast oper-
ation speed of 0.8 ms (typical).
6. Low-level off state leakage current
TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors
TYPES
*Indicate the peak AC and DC values.
Note:
For space reasons, the SMD terminal shape indicator "A" and the package type indicator "X" and "Z" are omitted from the seal.
Type I/O isolation
voltage
Output rating* Part No. Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage Load
current Tube packing style Tape and reel packing style Tube Tape and
reel
Pick ed from the
1/2/3/4-pin side Pick ed from the
5/6/7/8-pin side
AC/DC
type Reinforced
5,000 V 400 V 100 mA AQW414EH AQW414EHA AQW414EHAX AQW414EHAZ 1 tube contains
40 pcs.
1 batch contains
400 pcs. 1,000 pcs.
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C 77
°
F)
Item Symbol AQW414EH (A) Remarks
Input
LED forward current I
F
50mA
LED reverse voltage V
R
3V
Peak forward current I
FP
1A f =100 Hz, Duty factor = 0.1%
Power dissipation P
in
75mW
Output
Load voltage (peak AC) V
L
400 V
Continuous load current I
L
0.1 A (0.13 A) Peak AC, DC
( ): in case of using only 1 channel.
Peak load current I
peak
0.3 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
800mW
Total power dissipation P
T
850mW
I/O isolation voltage V
iso
5,000 V A C
Temperature
limits Operating T
opr
–40
°
C to +85
°
C –40
°
F to +185
°
FNon-condensing at low temperatures
Storage T
stg
–40
°
C to +100
°
C –40
°
F to +212
°
F
TESTING