1
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
7 W Ka Band Packaged Power Amplifier
Key Features and Performance
•
Frequency Range: 26 -
31 GHz
•
38 dBm Typical Psat @ Pin =21 dBm
•
22 dB Nominal Gain
•
15 dB Typical Return Loss
•
0.25µm pHEMT Technology
•
Bias Conditions: Vd = 6V, Idq
= 4.2 A
•
Package Dimensions: 0.526 x 0.650 x 0.073 in
Preliminary Measured Performance
Bias Conditions: Vd=6 V Idq=4.2 A
Primary Applications
•
Satellite Ground Terminals
•
Point to Point
Product Description
The TriQuint TGA4915-CP is a compact
7 Watt High Power Amplifier for Ka band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
Power pHEMT production process.
The TGA4915-CP provides a nominal 38
dBm of output power at an input power
level of 21 dBm with a small signal gain
of 22 dB.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals
and point to point radio.
30
31
32
33
34
35
36
37
38
39
40
24 25 26 27 28 29 30 31 32
Frequency (GHz)
Power (dBm)
Psat
P1dB
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
24 25 26 27 28 29 30 31 32 33 34
Frequency (GHz)
Gain (dB)
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
Return Loss (dB)
In
p
ut
Output
Datasheet subject to change without notice.
2
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
TABLE I
MAXIMUM RATINGS 1/
Symbol Parameter Value Notes
V
+
Positive Supply Voltage 8 V
V
-
Negative Supply Voltage Range -3V TO 0V
I
+
Positive Supply Current (Quiescent) 8 A
| I
G
|
Gate Supply Current 124 mA
P
IN
Input Continuous Wave Power 27 dBm
P
D
Power Dissipation 50 W
T
CH
Operating Channel Temperature 200 °C 2/
T
M
Mounting Temperature (30 Seconds) 210 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is not
implied.
2/ Junction operating temperature will directly affect the device median lifetime. For maximum life, it is
recommended that junction temperatures be maintained at the lowest possible levels.
.
3
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25 °C, Nominal)
(Vd = 6 V, Id = 4.2 A)
SYMBOL PARAMETER TEST
CONDITION
TYPICAL UNITS
Gain Small Signal Gain F = 26-31 GHz 22 dB
IRL Input Return Loss F = 26-31 GHz 15 dB
ORL Output Return Loss F = 26-31 GHz 15 dB
PWR Output Power @ P1dB F = 26-31 GHz 38 dBm
4
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
TABLE III
THERMAL INFORMATION
Parameter Test Conditions T
CH
(°C)
θ
JC
(°C/W)
T
m
(hours)
θ
JC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 6 V
I
D
= 4.2 A
P
DISS
= 25.2 W
128 2.3 7.4 E+6
θ
JC
Thermal Resistance
(Channel to Backside of
Package)
Vd = 8 V
Id = 7.1 A @ Psat
P
diss
= 50 W
P
out
= 7 W (RF)
200 2.3 2.3 E+4
.
Note: Carrier at 85 °C baseplate temperature. Worst case is at saturated output power
when DC power consumption rises to 57 W with 7 W RF power delivered to the load. Power
dissipated is 50 W and the temperature rise in the channel is 115 °C.
Median Lifetime (Tm) vs. Channel Temperature
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
25 50 75 100 125 150 175 200
Channel Temperature ( C)
Median Lifetime (Hours)
FE T3
°
5
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 4.2 A
30
31
32
33
34
35
36
37
38
39
40
24 25 26 27 28 29 30 31 32
Frequency (GHz)
Power (dBm)
Psat
P1dB
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
24 25 26 27 28 29 30 31 32 33 34
Frequency (GHz)
Gain (dB)
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
Return Loss (dB)
In
p
ut
Output
6
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 4.2 A
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
-10-5 0 5 10152025
Pin(dBm)
Ids(A)
0
2
4
6
8
10
12
14
16
18
20
PAE (%)
Ids, Top
Ids, Lower
PAE
0
4
8
12
16
20
24
28
32
36
40
-10-5 0 5 10152025
Input Power (dBm)
Output Power (dBm) &
Gain (dB)
25GHz_Power 25GHz_Gain 27GHz_Power 27GHz_Gain
29GHz_Power 29GHz_Gain 31GHz_Power 31GHz_Gain
@ 30 GHz
7
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Package Pinout Diagram
1
RF IN
2 3 4
VG1 VD1 VD2
8 7 6
VG2 VD3 VD4
5
RF OUT
TGA4915-CP
8
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Dimensioned in inches
Side View
0.8153
0.0028/ 0.0024
0.0000
LID
SUBSTRATE
STACK .
1.8542
±.005
DIMENSIONS IN INCHES
0.073 +/- 0.005
0.000
0.032
+0.003/-0.002
Top View
0.349
0.325
0.301
4X Ø0.078 ± 0.003
0.650
0.582
0.504
0.526
0.349
0.325
0.301
1
234
5
6
7
8
0.135
0.068
0.000
0.147
0.000
0.333
0.458
0.391
0.263
0.194
TGA4915-CP
9
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
ORDERING INFORMATION
PART PACKAGE STYLE
TGA4915-CP CARRIER PLATE
Assembly of a TGA4915-CP into a Module
Manual Assembly for Prototypes
1. Clean the module with Acetone. Rinse with alcohol and DI water. Allow the module to fully dry.
2. To improve the thermal and RF performance, we recommend attaching a heatsink to the bottom of the
package. If the TGA4915-CP is mounted to the heatsink with mounting screws, we recommend
an indium
shim or other compliant material be inserted between the TGA4915-CP and the heatsink to reduce thermal
contact resistance due to air gaps. The TGA4915-CP may also be attached to the heatsink using SN63
solder or any other Tin/Lead solder. The TGA4915-CP may also be mounted with DieMat DM6030HK
conductive epoxy or similar thermally and electrically conductive epoxy.
3. The DC and RF interconnects may be gold bondwires or gold ribbons. The RF interconnects should be
as short as possible. A minimum of two 1 mil wires are recommended for the RF Input, RF Output, Vg, and
Vd1 and Vd3. Six bondwires are recommended for Vd2 and Vd4.