© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1Publication Order Number:
MMBT4126LT1/D
MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
•Moisture Sensitivity Level: 1
•ESD Rating: − Human Body Model: > 4000 V
− Machine Model: > 400 V
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −25 Vdc
Collector−Base Voltage VCBO −25 Vdc
Emitter−Base Voltage VEBO −4 Vdc
Collector Current−Continuous IC−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
C3 M G
G
C3 = Device Code
M = Date Code*
G= Pb−Free Package
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MMBT4126LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT4126LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−25 −
Vdc
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
−25 −
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−4−
Vdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ICEX
− −50
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −2.0 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
HFE 120
60
300
−
−
Collector −Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
− −0.4
Vdc
Base −Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
− −0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT250 −
MHz
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−4.5
pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−10
pF
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
hfe 120
2.5
480
−
−
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
−4.0
dB
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
Figure 1. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
MMBT4126LT1G
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3
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 3.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 4.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 5. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
-4
70
30
0.7 7.0
0.7 7.0
7.0
3.0
0.7
0.3
0.7 7.0
0.7 7.0
MMBT4126LT1G
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4
TYPICAL STATIC CHARACTERISTICS
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
Figure 10. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 11. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°C VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
MMBT4126LT1G
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MMBT4126LT1/D
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