Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.8, 07-Jan-10 133
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output,
with Base Connection Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
COUPLER
Isolation test voltage VISO 5000 VRMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter and
detector ≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 125 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj125 °C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld 260 °C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage (2) IF = 50 mA VF1.3 1.5 V
Reverse current (2) VR = 3 V IR0.1 100 μA
Capacitance VR = 0 V CO25 pF
OUTPUT
Collector base breakdown voltage (2) IC = 100 μA BVCBO 70 V
Collector emitter breakdown voltage (2) IC = 1 mA BVCEO 30 V
Emitter collector breakdown voltage (2) IE = 100 μA BVECO 7V
ICEO(dark) (2) VCE = 10 V, (base open)
4N25 5 50 nA
4N26 5 50 nA
4N27 5 50 nA
4N28 10 100 nA
ICBO(dark) (2) VCB = 10 V,
(emitter open) 220nA
Collector emitter capacitance VCE = 0 CCE 6pF
COUPLER
Isolation test voltage (2) Peak, 60 Hz VIO 5000 V
Saturation voltage, collector emitter ICE = 2 mA, IF = 50 mA VCE(sat) 0.5 V
Resistance, input output (2) VIO = 500 V RIO 100 GΩ
Capacitance, input output f = 1 MHz CIO 0.6 pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT