BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features * High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 * Collector-Emitter Sustaining Voltage at 100 mAdc * * * VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic Construction with Build-In Base-Emitter Shunt Resistors These Devices are Pb-Free and are RoHS Compliant* www.onsemi.com DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol Value Unit VCEO Vdc 80 100 1 3 Collector-Base Voltage BDX33B, BDX34B BDX33C, BDX34C VCB Emitter-Base Voltage VEB 5.0 Vdc Collector Current Continuous Peak IC 10 15 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 70 0.56 W W/C BDX3xyG TJ, Tstg -65 to +150 C AY WW Operating and Storage Junction Temperature Range Vdc 2 TO-220 CASE 221A STYLE 1 80 100 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BDX3xy = THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol Max Unit RqJC 1.78 C/W A Y WW G = = = = Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2014 November, 2014 - Rev. 14 1 Publication Order Number: BDX33B/D BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 80 100 - - 80 100 - - 80 100 - - - - 0.5 10 - - 1.0 5.0 IEBO - 10 mAdc hFE 750 - - VCE(sat) - 2.5 Vdc VBE(on) - 2.5 Vdc VF - 4.0 Vdc OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) VCEO(sus) BDX33B/BDX34B BDX33C/BDX34C Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, RBE = 100) Vdc VCER(sus) BDX33B/BDX34B BDX33C/BDX33C Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) Vdc VCEX(sus) BDX33B/BDX34B BDX33C/BDX34C Collector Cutoff Current (VCE = 1/2 rated VCEO, IB = 0) Vdc ICEO TC = 25C TC = 100C Collector Cutoff Current (VCB = rated VCBO, IE = 0) mAdc ICBO TC = 25C TC = 100C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Diode Forward Voltage (IC = 8.0 Adc) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. Pulse Test non repetitive: Pulse Width = 0.25 seconds. www.onsemi.com 2 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92C/W 0.02 t1 0.03 0.01 0.02 t2 SINGLE PULSE D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 1. Thermal Response 500 ms IC, COLLECTOR CURRENT (AMP) 10 20 100 ms 5.0 ms 1.0 ms 5.0 TC = 25C 2.0 dc 1.0 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 0.02 1.0 500 ms 10 IC, COLLECTOR CURRENT (AMP) 20 5.0 ms 1.0 ms 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.05 BDX34B BDX34C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.02 1.0 70 100 100 ms BDX33B BDX33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Active-Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 TJ = 25C 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 5000 3000 2000 1000 500 300 200 TJ = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 2.0 5.0 Cib 70 50 PNP NPN 1.0 Cob 100 10 20 50 100 f, FREQUENCY (kHz) 30 0.1 500 1000 200 Figure 3. Small-Signal Current Gain PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 3 50 100 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) NPN BDX33B, 33C PNP BDX34B, 34C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150C 5000 3000 2000 25C 1000 -55C 5000 2000 500 300 200 300 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 25C 1000 500 0.1 TJ = 150C 3000 5.0 7.0 10 -55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.1 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 0.3 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 6. Collector Saturation Region 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.5 10 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages www.onsemi.com 4 5.0 7.0 10 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) ORDERING INFORMATION Package Shipping BDX33BG TO-220 (Pb-Free) 50 Units / Rail BDX33CG TO-220 (Pb-Free) 50 Units / Rail BDX34BG TO-220 (Pb-Free) 50 Units / Rail BDX34CG TO-220 (Pb-Free) 50 Units / Rail Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AH -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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