BDX34BTSTU_NL - FAIRCHILD SEMICONDUCTOR

November, 2014 − Rev. 14 1Publication Order Number:

BDX33B/D

BDX33B, BDX33C (NPN)

BDX34B, BDX34C (PNP)

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

Features

•High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0

•Collector−Emitter Sustaining Voltage at 100 mAdc

VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B

= 100 Vdc (min) − BDX33C, BDX334C

•Low Collector−Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc

− BDX33B, 33C/34B, 34C

•Monolithic Construction with Build−In Base−Emitter Shunt Resistors

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCEO 80

100

Vdc

Collector−Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCB 80

100

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current

Continuous

Peak

IC10

15 Adc

Base Current IB0.25 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD70

0.56 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

TO−220

CASE 221A

STYLE 1

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MARKING DIAGRAM

BDX3xy = Device Code

x = 3 or 4

y = B or C

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

BDX3xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0) BDX33B/BDX34B

BDX33C/BDX34C

VCEO(sus) 80

100 −

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B

BDX33C/BDX33C

VCER(sus) 80

100 −

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B

BDX33C/BDX34C

VCEX(sus) 80

100 −

−

Vdc

Collector Cutoff Current

(VCE = 1/2 rated VCEO, IB = 0) TC = 25°C

TC = 100°C

ICEO −

−0.5

mAdc

Collector Cutoff Current

(VCB = rated VCBO, IE = 0) TC = 25°C

TC = 100°C

ICBO −

−1.0

5.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C hFE 750 − −

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C VCE(sat) − 2.5 Vdc

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C VBE(on) − 2.5 Vdc

Diode Forward Voltage

(IC = 8.0 Adc) VF− 4.0 Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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Figure 1. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RqJC(t) = r(t) RqJC

RqJC = 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03 0.3 3.0 30 300

1.0

5.0

2.0

1.0

0.5

0.02 3.0 5.0 7.0 10 20 30 50 10

0.2

5.0 ms

1.0 ms

BDX33B

BDX33C

500 ms

100

TC = 25°C

CURVES APPLY BELOW RATED VCEO

0.05

0.1

2.0

1.0

Figure 2. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.02 3.0 5.0 7.0 10 20 30 50 10070

0.2

IC, COLLECTOR CURRENT (AMP)

5.0 ms

1.0 ms

BDX34B

BDX34C

500 ms

100

TC = 25°C

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

0.05

0.1

2.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations o n the power h andling ability o f a

transistor: average junction temperature and second

breakdown. S afe o perating a rea c urves i ndicate I C − V CE l imits

of the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipation

than t he curves i ndicate. T he d ata o f F igure 3 i s b ased o n TJ(pk)

= 150°C; TC is variable depending on conditions. Second

breakdown pulse limits are valid for duty cycles to 10%

provided TJ(pk) = 150°C. TJ(pk) may be calculated from the

data in Figure 4. At high case temperatures, thermal

limitations will r e duce t he p ower t hat c an b e h andled t o v alues

less than the limitations imposed by second breakdown.

10,000

1.0

Figure 3. Small−Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL-SIGNAL CURRENT GAIN

3000

200

500

2000

1000

300

0.1

Figure 4. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

TJ = 25°C

Cib

Cob

500.2 0.5

TJ = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

PNP

NPN

PNP

NPN

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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0.1

Figure 5. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 4.0 V

200 7.0

NPN

BDX33B, 33C

PNP

BDX34B, 34C

20,000

5000

10,000

3000

2000

1000

3.0 5.0 0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

VCE = 4.0 V

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 7. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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ORDERING INFORMATION

Device Package Shipping†

BDX33BG TO−220

(Pb−Free) 50 Units / Rail

BDX33CG TO−220

(Pb−Free) 50 Units / Rail

BDX34BG TO−220

(Pb−Free) 50 Units / Rail

BDX34CG TO−220

(Pb−Free) 50 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BDX33B/D

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Order Literature: http://www.onsemi.com/orderlit

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Sales Representative

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