Publication Date : May.2011
1
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….......................… 50A
Collector-emitter voltage VCES ......................… 1200V
Maximum junction temperature Tjmax .............. 175°C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
CIB (Converter+Inverter+Chopper Brake)
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm
TERMINAL
t=0.8
SECTION A
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
P1(48~49)
N1(44~45)
GUP(13)
U(14~15)
GUN(40)
TH1(29)
TH2(28)
GVP(18)
V(19~20)
GVN(33)
GWP(23)
W(24~25)
GWN(31)
B(52~53)
GB(41)
NTC
ClampDi
P(54~56)
N(59~61)
R(1~2)
S(5 ~6)
T(9~10)
Es(32)
Es'(39)
Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module,
but should use all each three pins for the external wiring.
The tolerance of size between
terminals is assumed to be ±0.4.
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
2
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol Item Conditions Rating Unit
VCES Collector-emitter voltage G-E short-circuited 1200 V
VGES Gate-emitter voltage C-E short-circuited ±20 V
IC DC, TC=125 °C (Note.2, 4) 50
ICRM Collector current Pulse, Repetitive (Note.3) 100
A
Ptot Total power dissipation TC=25 °C (Note.2, 4) 425 W
IE (Note.1) T
C=25 °C (Note.2, 4) 50
IERM (Note.1) Emitter current Pulse, Repetitive (Note.3) 100
A
Tjmax Maximum junction temperature - 175 °C
BRAKE PART IGBT/CLAMPDi
Symbol Item Conditions Rating Unit
VCES Collector-emitter voltage G-E short-circuited 1200 V
VGES Gate-emitter voltage C-E short-circuited ±20 V
IC DC, TC=125 °C (Note.2, 4) 35
ICRM Collector current Pulse, Repetitive (Note.3) 70
A
Ptot Total power dissipation TC=25 °C (Note.2, 4) 355 W
VRRM Repetitive peak reverse voltage G-E short-circuited 1200 V
IF T
C=25 °C (Note.2, 4) 35
IFRM Forward current Pulse, Repetitive (Note.3) 70
A
Tjmax Maximum junction temperature - 175 °C
CONVERTER PART Di
Symbol Item Conditions Rating Unit
VRRM Repetitive peak reverse voltage - 1600 V
Ea Recommended AC input voltage RMS 440 V
IO DC output current 3-phase full wave rectifying, TC=125 °C (Note.2) 50 A
The sine half wave 1 cycle peak value,
IFSM Surge forward current f=60 Hz, non-repetitive 500 A
I2t Current square time Value for one cycle of surge current 1040 A2s
Tjmax Maximum junction temperature - 150 °C
MODULE
Symbol Item Conditions Rating Unit
TCmax Maximum case temperature (Note.2) 125 °C
Tjop Operating junction temperature - -40 ~ +150
Tstg Storage temperature - -40 ~ +125 °C
Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
MECHANICAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
Terminal to terminal 6.47 - -
ds Creepage distance Terminal to base plate 14.27 - - mm
Terminal to terminal 6.47 - -
da Clearance Terminal to base plate 12.33 - - mm
m Weight - - 300 - g
ec Flatness of base plate On the centerline X, Y (Note.5) ±0 - +100 μm
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
3
ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA
IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA
VGE(th) Gate-emitter threshold voltage IC=5 mA, VCE=10 V 5.4 6.0 6.6 V
IC=50 A (Note.6) , T j=25 °C - 1.80 2.25
VGE=15 V, T j=125 °C - 2.00 -
(Terminal) Tj=150 °C - 2.05 -
V
IC=50 A (Note.6) , T j=25 °C - 1.70 2.15
VGE=15 V, T j=125 °C - 1.90 -
VCEsat Collector-emitter saturation voltage
(Chip) T j=150 °C - 1.95 -
V
Cies Input capacitance - - 5.0
Coes Output capacitance - - 1.0
Cres Reverse transfer capacitance
VCE=10 V, G-E short-circuited
- - 0.08
nF
QG Gate charge VCC=600 V, IC=50 A, VGE=15 V - 117 - nC
td(on) Turn-on delay time - - 300
tr Rise time VCC=600 V, IC=50 A, VGE=±15 V, - - 200
td(off) Turn-off delay time - - 600
tf Fall time RG=13 Ω, Inductive load - - 300
ns
IE=50 A (Note.6) , Tj=25 °C - 1.80 2.25
G-E short-circuited, T j=125 °C - 1.80 -
(Terminal) T j=150 °C - 1.80 -
V
IE=50 A (Note.6) , Tj=25 °C - 1.70 2.15
G-E short-circuited, T j=125 °C - 1.70 -
VEC (Note.1) Emitter-collector voltage
(Chip) T j=150 °C - 1.70 -
V
trr (Note.1) Reverse recovery time VCC=600 V, IE=50 A, VGE=±15 V, - - 300 ns
Qrr (Note.1) Reverse recovery charge RG=13 Ω, Inductive load - 2.7 - μC
Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=50 A, - 5.5 -
Eoff Turn-off switching energy per pulse VGE=±15 V, RG=13 Ω, T j=150 °C, - 5.3 - mJ
Err (Note.1) Reverse recovery energy per pulse Inductive load - 4.5 - mJ
Main terminals-chip, per switch,
RCC'+EE' Internal lead resistance TC=25 °C (Note.2) - - 5.0 mΩ
rg Internal gate resistance Per switch - 0 - Ω
BRAKE PART IGBT/CLAMPDi
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA
IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA
VGE(th) Gate-emitter threshold voltage IC=3.5 mA, VCE=10 V 5.4 6.0 6.6 V
IC=35 A (Note.6) , T j=25 °C - 1.80 2.25
VGE=15 V, T j=125 °C - 2.00 -
(Terminal) Tj=150 °C - 2.05 -
V
IC=35 A (Note.6) , T j=25 °C - 1.70 2.15
VGE=15 V, T j=125 °C - 1.90 -
VCEsat Collector-emitter saturation voltage
(Chip) T j=150 °C - 1.95 -
V
Cies Input capacitance - - 3.5
Coes Output capacitance - - 0.7
Cres Reverse transfer capacitance
VCE=10 V, G-E short-circuited
- - 0.06
nF
QG Gate charge VCC=600 V, IC=35 A, VGE=15 V - 82 - nC
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
4
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
BRAKE PART IGBT/CLAMPDi
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
td(on) Turn-on delay time - - 300
tr Rise time VCC=600 V, IC=35 A, VGE=±15 V, - - 200
td(off) Turn-off delay time - - 600
tf Fall time RG=18 Ω, Inductive load - - 300
ns
IF=35 A (Note.6) , T j=25 °C - 1.80 2.25
G-E short-circuited, T j=125 °C - 1.80 -
(Terminal) T j=150 °C - 1.80 -
V
IF=35 A (Note.6) , T j=25 °C - 1.70 2.15
G-E short-circuited, T j=125 °C - 1.70 -
VF
Forward voltage
(Chip) T j=150 °C - 1.70 -
V
trr Reverse recovery time VCC=600 V, IF=35 A, VGE=±15 V, - - 300 ns
Qrr Reverse recovery charge RG=18 Ω, Inductive load - 1.9 - μC
Eon Turn-on switching energy per pulse VCC=600 V, IC=IF=35 A, - 4.2 -
Eoff Turn-off switching energy per pulse VGE=±15 V, RG=18 Ω, T j=150 °C, - 3.7 - mJ
Err Reverse recovery energy per pulse Inductive load - 3.5 - mJ
rg Internal gate resistance - - 0 - Ω
CONVERTER PART CONVDi
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
IRRM Repetitive peak reverse current VR=VRRM, Tj=150 °C - - 6 mA
VF
(Terminal) Forward voltage IF=50 A (Note.6) - 1.2 1.6 V
NTC THERMISTOR PART
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
R25 Zero-power resistance TC=25 °C (Note.2) 4.85 5.00 5.15 kΩ
ΔR/R Deviation of resistance TC=100 °C, R100=493 Ω -7.3 - +7.8 %
B(25/50) B-constant Approximate by equation
(Note.7) - 3375 - K
P25 Power dissipation TC=25 °C (Note.2) - - 10 mW
THERMAL RESISTANCE CHARACTERISTICS
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
Rth(j-c)Q Junction to case, per Inverter IGBT - - 0.35
Rth(j-c)D Junction to case, per Inverter FWDi - - 0.63 K/W
Rth(j-c)Q Junction to case, per Brake IGBT - - 0.42
Rth(j-c)D Junction to case, per Brake ClampDi - - 0.69 K/W
Rth(j-c)D
Thermal resistance (Note.2)
Junction to case, per Converter ConvDi - - 0.33 K/W
Case to heat sink, per 1 module,
Rth(c-s) Contact thermal resistance (Note.2) Thermal grease applied (Note.8) - 15 - K/kW
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
5
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2: Case temperature (TC) and heat sink temperature (T s) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
3: Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed T jmax rating.
4: Junction temperature (T j) should not increase beyond T jmax rating.
5: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
7: )
TT
/()
R
R
ln(B )/(
502550
25
5025
11 ,
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
9: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"M2.6×10 or M2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.
RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
VCC (DC) Supply voltage Applied across P-N/P1-N1 terminals - 600 850 V
VGEon Gate (-emitter drive) voltage Applied across GB-Es1/
G*P-*/G*N-Es(*=U, V, W) terminals 13.5 15.0 16.5 V
Inverter IGBT 13 - 130
RG External gate resistance Per switch Brake IGBT 18 - 180 Ω
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
6
CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, CR*P/CR*N: ConvDi (*=R/S/T), Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
～
t
tf
tr
td(on)
iC
10%
90 %
90 %
vGE
VCC
iC
RG
-VGE
+VGE
-VGE
Load
～
～
～
0 V
0 A
+
0
VCE
VGE
0 V
td(off)
t
iE
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
Switching characteristics test circuit and waveforms trr, Qrr test waveform
0.1×I
CM
I
CM
V
CC
v
CE
i
C
t
0
t
i
0.1×V
CC
0.1×V
CC
V
CC
I
CM
v
CE
i
C
t0 0.02×I
CM
t
i
IEM
vEC
iE
t0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
7
TEST CIRCUIT
IC
14/15
44/45
32
40
13
V
Short-
circuited
48/49
VGE=15 V
IC
19/20
44/45
32
33
18
V
Short-
circuited
48/49
VGE=15 V
IC
24/25
44/45
32
31
23
V
Short-
circuited
48/49
VGE=15 V
IC
B
N1
Es
GB
P1
VGE=15 V
V
IC
U
N1
Es
GUN
GUP
V
Short-
circuited
P1
VGE=15 V
IC
V
N1
Es
GVN
GVP
V
Short-
circuited
P1
VGE=15 V
IC
W
N1
Es
GWN
GWP
V
Short-
circuited
P1
VGE=15 V
IF
52/53
44/45
32
41
48/49
V
Short-
circuited
G-E
short-circuited
GVP-V, GVN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GWP-W, GWN-Es
UP / UN IGBT VP / VN IGBT WP / WN IGBT Brake IGBT / ClampDi
VCEsat / ClampDi VF test circuit
IE
14/15
44/45
32
40
13
V
Short-
circuited
48/49
Short-
circuited
IE
19/20
44/45
32
33
18
V
Short-
circuited
48/49
Short-
circuited
IE
24/25
44/45
32
31
23
V
Short-
circuited
48/49
Short-
circuited
IF
1/2
59
/
60/61
54/55/56
V
IE
U
N1
Es
GUN
GUP
V
Short-
circuited
P1
Short-
circuited
IE
V
N1
Es
GVN
GVP
V
Short-
circuited
P1
Short-
circuited
IE
W
N1
Es
GWN
GWP
V
Short-
circuited
P1
Short-
circuited
IF
R
N
P
V
G-E
short-circuited
GVP-V, GVN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GB-Es
UP / UN FWDi VP / VN FWDi WP / WN FWDi ConvDi (ex. phase-R)
VEC / ConvDi VF test circuit
* In the above test circuit, should use all three main pin terminals (P1/N1/P/N/U/V/W) for connection with the terminals and the current source.
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
8
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
Tj=25 °C (Chip) VGE=15 V (Chip)
COLLECTOR CURRENT IC (A)
0
20
40
60
80
100
0246810
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (V)
0
0.5
1
1.5
2
2.5
3
3.5
0 20406080100
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Tj=25 °C (Chip) G-E short-circuited (Chip)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (V)
0
2
4
6
8
10
6 8 10 12 14 16 18 20
EMITTER CURRENT IE (A)
1
10
100
00.511.522.53
GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
Tj=150 °C
Tj=125 °C
Tj=25 °C
Tj=150 °C
Tj=25 °C
IC=100 A
IC=50 A
IC=20 A
VGE=20 V
12 V
11 V
10 V
9 V
13.5 V
15 V
Tj=125 °C
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
9
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD
---------------: T j=150 °C, - - - - -: Tj=125 °C
VCC=600 V, VGE=±15 V, IC=50 A, INDUCTIVE LOAD
---------------: T j=150 °C, - - - - -: Tj=125 °C
SWITCHING TIME (ns)
1
10
100
1000
1 10 100
SWITCHING TIME (ns)
10
100
1000
10 100 1000
COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=13 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j=150 °C, - - - - -: Tj=125 °C
VCC=600 V, VGE=±15 V, IC=50 A,
INDUCTIVE LOAD, PER PULSE
---------------: T j=150 °C, - - - - -: Tj=125 °C
SWITCHING ENERGY (mJ)
0.1
1
10
100
1 10 100
0.01
0.1
1
10
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
Eon
Eoff
Err
td(on)
tr
tf
td(off)
Eon
Eoff
Err
td(on)
tr
tf
td(off)
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
10
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j=25 °C
VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD
---------------: T j=150 °C, - - - - -: Tj=125 °C
CAPACITANCE (nF)
0.01
0.1
1
10
100
0.1 1 10 100
trr (ns), Irr (A)
10
100
1000
110100
COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
VCC=600 V, IC=50 A, Tj=25 °C
Single pulse, TC=25 °C
Rth(j-c)Q=0.35 K/W, R th(j-c)D=0.63 K/W
GATE-EMITTER VOLTAGE VGE (V)
0
5
10
15
20
0 50 100 150 200
NORMALIZED TRANSIENT THERMAL RESISTANCE
Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
GATE CHARGE QG (nC) TIME (S)
trr
Irr
Cies
Coes
Cres
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
11
PERFORMANCE CURVES
BRAKE PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VGE=15 V (Chip) G-E short-circuited (Chip)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
0
0.5
1
1.5
2
2.5
3
3.5
0 10203040506070
FORWARD VOLTAGE VF (V)
1
10
100
00.511.522.53
COLLECTOR CURRENT IC (A) FORWARD CURRENT IF (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=18 Ω, INDUCTIVE LOAD
---------------: T j=150 °C, - - - - -: Tj=125 °C
VCC=600 V, IC=35 A, VGE=±15 V, INDUCTIVE LOAD
---------------: T j=150 °C, - - - - -: Tj=125 °C
SWITCHING TIME (ns)
1
10
100
1000
1 10 100
SWITCHING TIME (ns)
10
100
1000
10 100 1000
COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)
Tj=150 °C
Tj=125 °C
Tj=25 °C
Tj=150 °C
Tj=125 °C
Tj=25 °C
td(on)
tr
tf
td(off)
td(on)
tr
tf
td(off)
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
12
PERFORMANCE CURVES
BRAKE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=18 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j=150 °C, - - - - -: Tj=125 °C
VCC=600 V, IC/IF=35 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T j=150 °C, - - - - -: Tj=125 °C
SWITCHING ENERGY (mJ)
0.1
1
10
100
1 10 100
0.01
0.1
1
10
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
COLLECTOR CURRENT IC (A)
FORWARD CURRENT IF (A)
EXTERNAL GATE RESISTANCE RG (Ω)
CLAMP DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
VCC=600 V, VGE=±15 V, RG=18 Ω, INDUCTIVE LOAD
---------------: T j=150 °C, - - - - -: Tj=125 °C
Single pulse, TC=25 °C
Rth(j-c)Q=0.42 K/W, R th(j-c)D=0.69 K/W
trr (ns), Irr (A)
10
100
1000
1 10 100
NORMALIZED TRANSIENT THERMAL RESISTANCE
Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
FORWARD CURRENT IF (A) TIME (S)
Eon
Eoff
Err
Eon
Eoff
Err
Irr
trr
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
13
PERFORMANCE CURVES
CONVERTER PART
CONVERTER DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25 °C
Rth(j-c)D=0.33 K/W
FORWARD CURRENT IF (A)
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
NORMALIZED TRANSIENT THERMAL RESISTANCE
Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
FORWARD VOLTAGE VF (V) TIME (S)
Tj=125 °C
Tj=25 °C
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : May.2011
14
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