FEATURES
DTrench FETr Power MOSFET
DPWM Optimized
D100% Rg Tested
APPLICATIONS
DSymmetrical Buck-Boost DC/DC Converter
Si4804BDY
Vishay Siliconix
Document Number: 72061
S-32621—Rev. D, 29-Dec-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.022 @ VGS = 10 V 7.5
30 0.030 @ VGS = 4.5 V 6.5
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
Ordering Information: Si4804BDY—E3 (Lead Free)
Si4804BDY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ = 150
_
C)a
TA = 25_C
ID
7.5 5.7
Continuous Drain Current (TJ = 150_C)a
TA = 70_CID6.0 4.6
A
Pulsed Drain Current IDM 30 A
Continuous Source Current (Diode Conduction)aIS1.7 0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0 1.1
W
Maximum Power Dissipationa
TA = 70_CPD1.3 0.7 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
THERMAL RESISTANCE RATINGS
Limits
Parameter S
y
mbol Typ Max Unit
Mi J ti tAbit
a
t v 10 sec
R
52 62.5
Maximum Junction-to-Ambienta
Steady-State RthJA 93 110 _C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 35 40
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Si4804BDY
Vishay Siliconix
www.vishay.com
2
Document Number: 72061
S-32621—Rev. D, 29-Dec-03
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min TypaMax Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V VGS = 0 V TJ = 85
_
C
15
mA
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V, TJ = 85_C 15
mA
On-State Drain CurrentbID(on) VDS = 5 V, VGS = 10 V 20 A
Drain Source On State Resistanceb
VGS = 10 V, ID = 7.5 A 0.017 0.022
W
Drain-Source On-State Resistance
b
rDS(on) VGS = 4.5 V, ID = 6.5 A 0.024 0.030 W
Forward Transconductancebgfs VDS = 15 V, ID = 7.5 A 19 S
Diode Forward Voltageb
IS = 1 A VGS = 0 V
075
12
V
Diode Forward Voltage
b
VSD IS = 1 A, VGS = 0 V 0.75 1.2 V
Dynamica
Total Gate Charge Qg711
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 7.5 A 2.9 nC
Gate-Drain Charge Qgd
DS ,GS ,D
2.5
Gate Resistance Rg0.5 1.5 2.6 W
Turn-On Delay Time td(on) 9 15
Rise Time trVDD = 15 V, RL = 15 W10 17
Turn-Off Delay Time td(off)
VDD = 15 V
,
RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W19 30 ns
Fall Time tf9 15
Source Drain Reverse Recovery Time
IF = 1 7 A di/dt = 100 A/ms
Ch 1
35
55
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms Ch-1 35 55
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Si4804BDY
Vishay Siliconix
Document Number: 72061
S-32621—Rev. D, 29-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
240
480
720
960
1200
0 5 10 15 20 25 30
0
5
10
15
20
25
30
012345
0
5
10
15
20
25
30
0246810
VGS = 10 thru 5 V
TC = 125_C
−55_C
25_C
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
3 V
− On-Resistance (rDS(on) W)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
0
2
4
6
8
10
0 3 6 9 12 15
0.000
0.010
0.020
0.030
0.040
0 5 10 15 20 25 30
VDS − Drain-to-Source Voltage (V)
Crss
VDS = 15 V
ID = 7.5 A
ID − Drain Current (A)
VGS = 10 V
ID = 7.5 A
VGS = 10 V
VGS = 4.5 V
Gate Charge
− Gate-to-Source Voltage (V)
Q
g
− Total Gate Charge (nC)
C − Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
Coss
Ciss
4 V
On-Resistance vs. Drain Current
(Normalized)
− On-Resistance rDS(on)
Si4804BDY
Vishay Siliconix
www.vishay.com
4
Document Number: 72061
S-32621—Rev. D, 29-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
TJ = 150_CID = 7.5 A
20
10
0.1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
− Source Current (A)IS
−0.8
−0.6
−0.4
−0.2
−0.0
0.2
0.4
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
Safe Operating Area, Junction-to-Foot
VDS − Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
100 ms
− Drain Current (A)ID
0.1 TC = 25_C
Single Pulse
1 s
10 s
dc
1
TJ = 25_C
10 ms
1 ms
0
60
100
20
40
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
80
11010−1
10−2
10−3
Limited by rDS(on)
Si4804BDY
Vishay Siliconix
Document Number: 72061
S-32621—Rev. D, 29-Dec-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10−310−211010−1
10−4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 93_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM