2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous: ADE-208-543) Rev.2.00 Sep 07, 2005 Features * Low on-resistance RDS = 20 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 4 D 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 30 20 20 80 20 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS Min 30 20 Typ -- -- Max -- -- Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF -- -- 1.0 -- -- 8 -- -- -- -- -- -- -- -- -- -- -- 20 35 16 750 520 210 16 225 85 90 1.0 10 10 2.0 28 50 -- -- -- -- -- -- -- -- -- A A V m m S pF pF pF ns ns ns ns V VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V*3 ID = 10 A, VGS = 4 V*3 ID = 10 A, VDS = 10 V*3 trr -- 40 -- V VDS = 10 V, VGS = 0, f = 1 MHz ID = 10 A, VGS = 10 V, RL = 1 IF = 20 A, VGS = 0 diF/ dt = 50 A/ s IF = 20 A, VGS = 0 diF/ dt = 50A/ s 2SK2735(L), 2SK2735(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 sh ot ) C ) 3 10 30 100 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 Pulse Test 10 V 6V 5V 40 4.5 V 30 4V 20 3.5 V Drain Current ID (A) Drain Current ID (A) (1 25 1 Ta = 25C 0.5 0.1 0.3 1 200 m = 2 s s s Operation in this area is limited by RDS(on) s 5 m c 150 10 10 (T 100 = n tio 50 20 0 1 ra 0 PW pe 10 10 50 O 20 100 10 30 C Drain Current ID (A) 200 D Channel Dissipation Pch (W) 40 VGS = 3 V 10 25C 40 -25C Tc = 75C 30 20 10 VDS = 10 V Pulse Test 2 4 6 8 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.8 0.6 ID = 20 A 0.4 10 A 0.2 5A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (m) Drain to Source Saturation Voltage VDS (on) (V) 0 500 Pulse Test 200 100 50 VGS = 4 V 20 10 V 10 5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 80 ID = 20 A 60 VGS = 4 V 40 5, 10 A 20 5, 10, 20 A 10 V 0 -40 0 40 80 120 160 100 10 75C 1 0.3 0.1 0.1 1 3 10 30 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 5000 100 30 10 3 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100 VGS = 0 f = 1 MHz 2000 1000 Ciss 500 Coss 200 Crss 100 0 100 10 20 30 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 5 V 10 V 25 V VDS 12 VGS 20 8 10 4 VDD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 0 40 50 1000 Switching Time t (ns) 20 ID = 20 A 40 0 0.3 Body to Drain Diode Reverse Recovery Time 300 30 VDS = 10 V Pulse Test Drain Current ID (A) 10000 50 25C 3 1000 1 0.1 Tc = -25C 30 Case Temperature TC (C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS (on) (m) 2SK2735(L), 2SK2735(S) 300 tf 100 td(on) 10 3 1 0.1 td(off) tr 30 VGS = 10 V, VDD = 10 V PW = 5 s, duty < 1 % 0.3 1 3 10 Drain Current ID (A) 30 100 2SK2735(L), 2SK2735(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 40 10 V 30 VGS = 0, -5 V 5V 20 10 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C 0.05 0.02 0.03 1 0.0 1s t ho Pu lse PDM D= PW T PW T 0.01 10 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor Vin D.U.T. RL Vin 10 V 50 Vout VDD = 10 V 10% 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 10% tr 90% td(off) tf 2SK2735(L), 2SK2735(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 0.5 JEITA Package Code 2.3 0.2 0.55 0.1 1.2 0.3 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 4.7 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 0.5 5.4 0.5 (0.1) Unit: mm 2.3 0.2 0.55 0.1 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 JEITA Package Code 0.8 0.1 2.29 0.5 0.55 0.1 2SK2735(L), 2SK2735(S) Ordering Information Part Name 2SK2735L-E 2SK2735STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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