NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 Vero Ic hy @ I/ Vee Vee (sat) PACKAGE | DEVICE (sus) (max) (min/max @ I-/Ig Py* fr TYPE | voLTs| amps| @A/V) (V@a/A) | WATTS | (MHZ) npn | 2N3054A | 58 4 | 25-100@.5/4 | 1@.5/.05 75 3 TO-66 | 9Nn3583 250" 1 | 40-200@.5/10 | 5@1/.125 35 10 2N3584 300" 5 | 25-100@1/10 | .75@1/.125 35 10 2N3585 400" 5 | 25-100@1/10 | .75@1/.125 35 10 IN 2N3738 225 25 | 40-200@.1/10 | 2.5@.25/.025 20 10 2N3739 300 25 | 40-200@.1/10 | 2.5@.25/.025 20 10 2N3766 60 1 | 40-160@.5/5 | 1@.5/.05 20 10 2N3767 80 1 | 40-160@.5/5 | 12.5/.05 20 10 2N3878 50 4 | 40-200@.5/2 | 2@4/.4 35 40 2N3879 75 7 |12-100@472 | 1.2@4/.4 35 40 2N4911 60 1 | 20-100@.5/1 | 6@1/.1 25 3 2N4912 80 1 | 20-100@.5/1 | 6@1/.1 25 3 2N5660 200 1 | 40-120@.5/5 | 4@1/.1 35 20 2N5661 300 1 |25-75@.5/5 | 4@1/1 35 20 2N5664 200 3 | 40-120@1/5 | .4@3/3 52.5 20 2N5665 300 3 |25-75@1/s | 4@3/.6 52.5 20 2N6315 60 7 | 20-100@2.5/4 | 1@4/.4 90 4 2N6316 80 7 | 20-100@2.5/4 | 1@4/.4 90 4 2N6372 40 6 | 20-100@3/4 | 1@3/3 40 4 2N6373 60 6 | 20-100@2.5/4 | 1@2.5/.25 40 4 2N6374 80 6 | 20-100@2/4_ | 1@2/.2 40 4 : Te =25C Veer