1
SUMMARY
BVCEO = -140V : RSAT = 92m ; IC= -4A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 140V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
4 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
APPLICATIONS
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
DEVICE MARKING
ZXTP
2014
ZXTP2014G
ISSUE 1 - JUNE 2005
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
IN SOT223
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY PER
REEL
ZXTP2014GTA 7 12mm
embossed 1,000 units
ZXTP2014GTC 13" 4,000 units
ORDERING INFORMATION PINOUT
TOP VIEW
SOT223
ZXTP2014G
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2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) RJA 42 °C/W
Junction to ambient (b) RJA 78 °C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO -180 V
Collector-emitter voltage BVCEO -140 V
Emitter-base voltage BVEBO -7 V
Continuous collector current (a) IC-4 A
Peak pulse current ICM -10 A
Power dissipation at TA=25°C (a)
Linear derating factor PD3.0
24 W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD1.6
12.8 W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to 150 °C
ABSOLUTE MAXIMUM RATINGS
ZXTP2014G
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO -180 -200 V IC=-100A
Collector-emitter breakdown voltage BVCER -180 -200 V IC=-1A, RB1k
Collector-emitter breakdown voltage BVCEO -140 -160 V IC=-10mA*
Emitter-base breakdown voltage BVEBO -7.0 -8.0 V IE=-100A
Collector cut-off current ICBO 1 -20
-0.5 nA
AVCB=-150V
VCB=-150V, Tamb=100C
Collector cut-off current ICER
R1k
1 -20
-0.5 nA
AVCB=-150V
VCB=-150V, Tamb=100C
Emitter cut-off current IEBO 1 -10 nA VEB=-6V
Collector-emitter saturation voltage VCE(SAT) -40
-55
-85
-275
-60
-80
-120
-360
mV
mV
mV
mV
IC=-0.1A, IB=-5mA*
IC=-0.5A, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
Base-emitter saturation voltage VBE(SAT) -940 -1040 mV IC=-3A, IB=-300mA*
Base-emitter turn-on voltage VBE(ON) -830 -930 mV IC=-3A, VCE=-5V*
Static forward current transfer ratio HFE 100
100
45
225
200
100
5
300 IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
Transition frequency fT120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance COBO 33 pF VCB=-10V, f=1MHz*
Switching times tON
tOFF
42
636 ns IC=-1A, VCC=-50V,
IB1=-I
B2=-100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
ZXTP2014G
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TYPICAL CHARACTERISTICS
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ISSUE 1 - JUNE 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Zetex Inc
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILS
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS